Transistors with built-in Resistor UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L (UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L) Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3 0.45±0.05 2 2.5 ● ● ● ● ● ● ● ● ● ● ● ● ● ● UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 UNR111D UNR111E UNR111F UNR111H UNR111L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ ■ Absolute Maximum Ratings 4.1±0.2 2.4±0.2 2.0±0.2 0.55±0.1 1 2.5 ■ Resistance by Part Number ● 4.5±0.1 3.5±0.1 7 0.85 1.25±0.05 ● 1.0 0.4 ■ Features ● 1.0 1.5 R0.9 R0.9 0. 1.0±0.1 For digital circuits 1.5 R Silicon PNP epitaxial planer transistor 2.5±0.1 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 C B R2 E (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Note) The part numbers in the parenthesis show conventional part number. 1 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Conditions min typ ICBO VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA UNR1111 – 0.5 UNR1112/1114/111E/111D – 0.2 – 0.1 UNR1115/1116/1117/1110 IEBO VEB = –6V, IC = 0 – 0.01 UNR111F/111H –1.0 UNR1119 –1.5 UNR1118/111L mA –2.0 Collector to base voltage VCBO IC = –10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 50 V UNR1111 Forward current transfer ratio 35 UNR1112/111E 60 UNR1113/1114 80 UNR1115*/1116*/1117*/1110* hFE VCE = –10V, IC = –5mA UNR111F/111D/1119/111H VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ – 0.25 –4.9 UNR1113 UNR111D VOL – 0.2 VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2 VCC = –5V, VB = –10V, RL = 1kΩ – 0.2 VCC = –5V, VB = –6V, RL = 1kΩ UNR111E Transition frequency fT 80 10 UNR1112/1117 22 UNR1113/1110/111D/111E MHz 47 (–30%) R1 4.7 UNR1118 0.51 UNR1119 1 UNR111H (+30%) 2.2 UNR1111/1112/1113/111L 0.8 1.0 1.2 UNR1114 0.17 0.21 0.25 UNR1118/1119 0.08 0.1 0.12 R1/R2 UNR111D V – 0.2 VCB = –10V, IE = 2mA, f = 200MHz UNR1111/1114/1115 UNR1116/111F/111L V V VCC = –5V, VB = –2.5V, RL = 1kΩ Output voltage low level Resistance ratio 460 20 Collector to emitter saturation voltage Input resistance 160 30 UNR1118/111L 4.7 UNR111E 2.14 UNR111F 0.47 UNR111H 0.17 * hFE rank classification (UNR1115/1116/1117/1110) 2 Unit ICEO UNR1113 Emitter cutoff current max Rank Q R S hFE 160 to 260 210 to 340 290 to 460 0.22 0.27 kΩ UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Common characteristics chart PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UNR1111 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –120 –0.8mA –0.7mA –100 –0.6mA –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 (V) –3 –10 –30 25˚C 120 –25˚C 80 40 0 –1 –100 –3 –10000 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance Cob (pF) –1 Ta=75˚C VCE=–10V IO — VIN f=1MHz IE=0 Ta=25˚C 5 Ta=75˚C 25˚C Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE –160 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 3 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Characteristics charts of UNR1112 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –140 –120 –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 –1 Cob — VCB –30 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 300 Collector current IC (mA) Collector to emitter voltage VCE (V) 6 Ta=75˚C 25˚C VCE=–10V Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector to emitter saturation voltage VCE(sat) (V) –160 hFE — IC 400 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 –1 –3 –10 –30 –100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UNR1113 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) Ta=25˚C –0.9mA –0.8mA –0.7mA –0.6mA –120 –0.5mA –100 –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 4 –12 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE=–10V Forward current transfer ratio hFE IB=–1.0mA –140 Collector to emitter saturation voltage VCE(sat) (V) –160 Ta=75˚C 300 25˚C 200 –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Cob — VCB IO — VIN 4 3 2 –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 VIN — IO –10000 Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR1114 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –140 IB=–1.0mA –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –0.2mA –40 –0.1mA –20 Collector to emitter saturation voltage VCE(sat) (V) –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –1 –3 –10 –10000 –30 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO VO=–5V Ta=25˚C –1000 –3000 –300 –1000 –100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C 200 IO — VIN f=1MHz IE=0 Ta=25˚C 5 300 Collector current IC (mA) Cob — VCB 6 VCE=–10V –25˚C –0.01 –0.1 –0.3 –12 hFE — IC 400 Forward current transfer ratio hFE –160 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –30 –10 –3 –1 1 –0.3 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.1 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 5 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UNR1115 IC — VCE VCE(sat) — IC –100 IB=–1.0mA Collector current IC (mA) –140 –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –0.4mA –80 –0.3mA –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR1116 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –0.8mA –120 –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 6 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE –160 –100 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Cob — VCB IO — VIN –10000 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 Collector to base voltage VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR1117 IC — VCE VCE(sat) — IC –100 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Collector current IC (mA) –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 Ta=75˚C –1 –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –3 –10 200 Ta=75˚C 25˚C 100 –25˚C 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –1 VCE=–10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –120 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 7 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UNR1118 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR1119 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –80 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 8 –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 160 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Cob — VCB 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) Collector to base voltage VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR1110 IC — VCE VCE(sat) — IC –100 –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –12 Collector to emitter voltage VCE (V) –3 –10 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 9 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UNR111D IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –20 –0.1mA –10 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 0 –12 –1 Cob — VCB –30 25˚C –25˚C 80 40 0 –1 –100 Ta=75˚C 120 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE=–10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Collector to emitter saturation voltage VCE(sat) (V) –60 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –1.5 –100 Collector to base voltage VCB (V) –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR111E IC — VCE Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –20 –0.2mA –0.1mA –10 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 10 –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 400 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA VCE(sat) — IC –100 Collector to emitter saturation voltage VCE(sat) (V) –60 –100 300 200 Ta=75˚C 100 0 –1 25˚C –25˚C –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Cob — VCB 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –1.5 –100 –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UNR111F IC — VCE VCE(sat) — IC Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector current IC (mA) –200 –160 –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 –10000 –30 Ta=75˚C 25˚C 80 –25˚C 40 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –3 120 IO — VIN f=1MHz IE=0 Ta=25˚C 5 –1 VCE=–10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE –240 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 11 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UNR111H IC — VCE VCE(sat) — IC –120 –80 IB=–0.5mA –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 IC/IB=10 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –12 Collector to emitter voltage VCE (V) –3 –30 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –0.1 –0.3 –100 –300 –1000 –1 –3 –10 –30 –100 Collector current IC (mA) VIN — IO –100 f=1MHz IE=0 Ta=25˚C Input voltage VIN (V) 5 –10 VCE=–10V Collector current IC (mA) Cob — VCB 6 240 Forward current transfer ratio hFE Collector current IC (mA) –100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Collector output capacitance Cob (pF) hFE — IC –100 4 3 2 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –3 –10 –30 Collector to base voltage –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) VCB (V) Characteristics charts of UNR111L IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 –160 IB=–1.0mA –120 –0.8mA –0.6mA –80 –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) 12 –12 hFE — IC –30 –10 –3 –1 Ta=75˚C 25˚C –0.3 –25˚C –0.1 –0.03 –0.01 –1 240 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 200 160 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Cob — VCB VIN — IO –100 f=1MHz IE=0 Ta=25˚C 5 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 4 3 2 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 Output current IO (mA) 13 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR