PANASONIC UN2217

Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
+0.25
0.65±0.15
0.65±0.15
1.45
0.95
3
+0.1
0.4 –0.05
+0.2
1
0.95
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
2.9 –0.05
●
1.5 –0.05
Features
1.9±0.2
■
Unit: mm
+0.2
2.8 –0.3
2
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
UN2211
UN2212
UN2213
UN2214
UN2215
UN2216
UN2217
UN2218
UN2219
UN2210
UN221D
UN221E
UN221F
UN221K
UN221L
UN221M
UN221N
UN221T
UN221V
UN221Z
■ Absolute Maximum Ratings
+0.1
0.16 –0.06
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.8
1.1 –0.1
Marking Symbol (R1)
8A
10kΩ
8B
22kΩ
8C
47kΩ
8D
10kΩ
8E
10kΩ
8F
4.7kΩ
8H
22kΩ
8I
0.51kΩ
8K
1kΩ
8L
47kΩ
8M
47kΩ
8N
47kΩ
8O
4.7kΩ
8P
10kΩ
8Q
4.7kΩ
EL
2.2kΩ
EX
4.7kΩ
EZ
22kΩ
FD
2.2kΩ
FF
4.7kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
0 to 0.1
●
+0.2
■ Resistance by Part Number
EIAJ:SC-59
Mini Type Package
Internal Connection
C
R1
B
R2
E
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
1
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter
cutoff
current
Conditions
typ
max
Unit
ICBO
VCB = 50V, IE = 0
0.1
µA
ICEO
VCE = 50V, IB = 0
0.5
µA
UN2211
0.5
UN2212/2214/221E/221D/221M/221N/221T
0.2
UN2213
0.1
UN2215/2216/2217/2210
0.01
IEBO
UN221F/221K
VEB = 6V, IC = 0
1.0
UN2219
1.5
UN2218/221L/221V
2.0
UN221Z
0.4
mA
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
Forward
current
transfer
ratio
UN2211
35
UN2212/221E
60
UN2213/2214/221M
80
UN2215*/2216*/2217*/2210*
160
UN221F/221D/2219
hFE
460
30
20
UN221N/221T
80
400
UN221V
60
200
UN221V
Output voltage high level
VCE(sat)
VOH
Output voltage low level
IC = 10mA, IB = 0.3mA
0.25
IC = 10mA, IB = 1.5mA
VCC = 5V, VB = 0.5V, RL = 1kΩ
0.04
UN221D
VOL
UN221E
Transition frequency
—
V
V
0.2
VCC = 5V, VB = 3.5V, RL = 1kΩ
0.2
VCC = 5V, VB = 10V, RL = 1kΩ
0.2
VCC = 5V, VB = 6V, RL = 1kΩ
fT
0.25
4.9
VCC = 5V, VB = 2.5V, RL = 1kΩ
UN2213/221K
Input
resistance
VCE = 10V, IC = 5mA
UN2218/221K/221L
Collector to emitter saturation voltage
V
0.2
VCB = 10V, IE = –2mA, f = 200MHz
150
UN2211/2214/2215/221K
10
UN2212/2217/221T
22
UN2213/221D/221E/2210
MHz
47
UN2216/221F/221L/221N/221Z
R1
(–30%)
4.7
UN2218
0.51
UN2219
1
UN221M/221V
2.2
* hFE rank classification (UN2215/2216/2217/2210)
2
min
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
(+30%)
kΩ
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
■ Electrical Characteristics (continued)
Parameter
Symbol
Conditions
min
typ
max
UN2211/2212/2213/221L
0.8
1.0
1.2
UN2214
0.17
0.21
0.25
UN2218/2219
0.08
0.1
0.12
UN221D
Resistance
ratio
(Ta=25˚C)
4.7
UN221E
UN221F/221T
Unit
2.14
R1/R2
0.47
UN221K
2.13
UN221M
0.047
UN211N
0.1
UN211V
1.0
UN211Z
0.21
3
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN2211
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
140
0.7mA
0.6mA
0.5mA
120
100
0.4mA
0.3mA
80
60
0.2mA
40
20
0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
100
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
0.3
25˚C
–25˚C
0.03
Collector to emitter voltage VCE (V)
Ta=75˚C
200
25˚C
–25˚C
100
3
10
30
1
100
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
1
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
4
300
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
0
0.3
Cob — VCB
6
Ta=75˚C
0.1
0.01
0.1
12
hFE — IC
400
Forward current transfer ratio hFE
160
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2212
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
140
IB=1.0mA
0.9mA
0.8mA
120
0.7mA
0.6mA
0.5mA
100
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
2
4
6
8
10
IC/IB=10
30
10
3
1
0.3
25˚C
–25˚C
0.03
0.01
0.1
12
Collector to emitter voltage VCE (V)
1
3
10
Ta=75˚C
200
25˚C
–25˚C
100
30
100
1
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
0
0.3
Cob — VCB
6
Ta=75˚C
0.1
0
0
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UN2213
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
120
0.9mA
0.8mA
0.7mA
0.6mA
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
hFE — IC
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
400
–25˚C
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
350
Ta=75˚C
300
25˚C
250
–25˚C
200
150
100
50
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
1000
Collector current IC (mA)
5
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UN2214
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
120
100
0.5mA
80
0.4mA
60
0.3mA
40
0.2mA
20
0.1mA
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
0
–25˚C
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
3
10
30
1
100
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
1
10000
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
6
300
0
0.3
Cob — VCB
5
VCE=10V
350
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2215
IC — VCE
VCE(sat) — IC
100
120
0.7mA
0.6mA
0.5mA
100
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
2
4
6
8
10
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0
0
12
0.03
–25˚C
0.01
0.1
0.3
1
3
10
Ta=75˚C
250
200
25˚C
150
–25˚C
100
50
30
1
100
3
4
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
300
0
Cob — VCB
5
VCE=10V
350
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
140
Collector current IC (mA)
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
160
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.03
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN2216
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
120
100
0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
hFE — IC
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0.01
0.1
400
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
350
Ta=75˚C
300
25˚C
250
–25˚C
200
150
100
50
–25˚C
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
1000
Collector current IC (mA)
7
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
IO — VIN
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
0.6
0.8
1.0
1.2
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
VCB (V)
Characteristics charts of UN2217
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
100
80
0.4mA
0.3mA
0.2mA
60
40
20
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
0.1
12
Collector to emitter voltage VCE (V)
250
200
Ta=75˚C
150
25˚C
–25˚C
100
50
1
3
10
30
100
1
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
300
0
0.3
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
8
350
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
–25˚C
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
Collector to emitter saturation voltage VCE(sat) (V)
120
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2218
IC — VCE
VCE(sat) — IC
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
160
120
0.6mA
0.5mA
0.4mA
80
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
3
10
25˚C
–25˚C
40
30
100
1
3
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
80
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
VCB (V)
0.03
0.6
0.8
1.0
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
160
120
0.5mA
0.4mA
80
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
Collector to emitter saturation voltage VCE(sat) (V)
200
0.01
0.1
1.4
0.3
1
3
10
30
100
Output current IO (mA)
VCE(sat) — IC
100
240
Ta=25˚C
1.2
Input voltage VIN (V)
Characteristics charts of UN2219
IC — VCE
Collector current IC (mA)
120
0
1
0.3
Cob — VCB
5
VCE=10V
–25˚C
0.01
0.1
12
Collector to emitter voltage VCE (V)
6
hFE — IC
160
hFE — IC
160
IC/IB=10
30
VCE=10V
Forward current transfer ratio hFE
Collector current IC (mA)
200
Collector to emitter saturation voltage VCE(sat) (V)
100
Forward current transfer ratio hFE
240
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
120
Ta=75˚C
80
25˚C
–25˚C
40
–25˚C
0.01
0.1
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
1000
Collector current IC (mA)
9
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
4
3
2
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
VIN — IO
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
0.4
100
0.03
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN2210
IC — VCE
VCE(sat) — IC
100
Ta=25˚C
Collector current IC (mA)
50
40
30
0.4mA
0.5mA
0.6mA
0.7mA
0.3mA
0.1mA
20
10
0
0
2
4
6
8
10
12
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
0.01
0.1
0.3
Collector to emitter voltage VCE (V)
Ta=75˚C
250
25˚C
200
–25˚C
150
100
50
3
10
30
100
1
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
1
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
3
0
0.1
0.3
1
3
10
Collector to base voltage
10
300
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
350
0
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
IB=1.0mA
0.9mA
0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
60
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221D
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
25
IB=1.0mA
20
15
0.2mA
0.1mA
10
5
Collector to emitter saturation voltage VCE(sat) (V)
100
Ta=25˚C
0.9mA
0.8mA
0.5mA
0.7mA
0.4mA
0.6mA
0.3mA
2
4
6
8
10
10
3
1
0.3
–25˚C
0.03
0.01
0.1
Collector to emitter voltage VCE (V)
25˚C
–25˚C
80
40
10
30
100
1
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
3
10000
4
Ta=75˚C
120
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
0
1
0.3
Cob — VCB
6
Ta=75˚C
25˚C
0.1
12
160
IC/IB=10
30
0
0
hFE — IC
Forward current transfer ratio hFE
30
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
1.5
100
VCB (V)
2.0
2.5
3.0
3.5
0.01
0.1
4.0
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UN221E
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
50
40
0.3mA
0.4mA
0.5mA
30
0.2mA
0.1mA
20
10
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
hFE — IC
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
0.1
160
VCE=10V
Forward current transfer ratio hFE
IB=1.0mA
0.7mA Ta=25˚C
0.9mA
0.6mA
0.8mA
100
Collector to emitter saturation voltage VCE(sat) (V)
60
Ta=75˚C
120
25˚C
–25˚C
80
40
–25˚C
0
0.3
1
3
10
30
Collector current IC (mA)
100
1
3
10
30
100
300
1000
Collector current IC (mA)
11
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
1
1.5
100
VCB (V)
2.0
2.5
3.0
3.5
0.01
0.1
4.0
0.3
1
3
10
30
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UN221F
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
0.9mA
0.8mA
0.7mA
0.6mA
160
120
IB=1.0mA
0.5mA
80
0.4mA
0.3mA
40
0.2mA
0.1mA
0
0
2
4
6
8
10
IC/IB=10
30
10
3
Ta=75˚C
1
0.3
25˚C
0.1
0.03
0.01
0.1
12
Collector to emitter voltage VCE (V)
25˚C
–25˚C
40
1
3
10
30
1
100
3
2
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
3
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
80
0
0.3
10000
4
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
1
0.03
3
0
0.1
0.3
1
3
10
Collector to base voltage
12
120
Collector current IC (mA)
f=1MHz
IE=0
Ta=25˚C
5
VCE=10V
–25˚C
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221K
IC — VCE
VCE(sat) — IC
240
Collector current IC (mA)
200
160
IB=1.2mA
120
1.0mA
0.8mA
80
0.6mA
0.4mA
40
0.2mA
0
0
2
4
6
8
10
IC/IB=10
10
1
25˚C
–25˚C
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
1
3
10
30
100
300
1000
1
Collector current IC (mA)
3
10
30
100
300
1000
Collector current IC (mA)
VIN — IO
100
f=1MHz
IE=0
Ta=25˚C
4
3
2
VO=0.2V
Ta=25˚C
30
Input voltage VIN (V)
Collector output capacitance Cob (pF)
VCE=10V
0.01
12
Cob — VCB
5
Ta=75˚C
0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
240
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
100
10
3
1
0.3
0.1
1
0.03
0
3
1
10
30
Collector to base voltage
0.01
0.1
100
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN221L
IC — VCE
VCE(sat) — IC
240
Collector current IC (mA)
200
160
IB=1.0mA
0.8mA
120
0.6mA
80
0.4mA
40
0.2mA
0
hFE — IC
IC/IB=10
10
1
Ta=75˚C
25˚C
0.1
–25˚C
0.01
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
240
VCE=10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
100
200
Ta=75˚C
160
25˚C
120
–25˚C
80
40
0
1
3
10
30
100
300
Collector current IC (mA)
1000
1
3
10
30
100
300
1000
Collector current IC (mA)
13
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
100
VO=0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
5
10
Input voltage VIN (V)
Collector output capacitance Cob (pF)
6
4
3
2
1
0.1
1
0.01
0.1
0
3
1
10
30
100
1
0.3
3
10
30
100
Output current IO (mA)
VCB (V)
Collector to base voltage
Characteristics charts of UN221M
IC — VCE
VCE(sat) — IC
10
Collector current IC (mA)
200
IB=1.0mA
0.9mA
0.8mA
0.7mA
160
0.6mA
0.5mA
0.4mA
0.3mA
120
0.2mA
80
0.1mA
40
3
1
0.3
Ta=75˚C
25˚C
0.1
0.03
0
–25˚C
0.01
0.003
2
4
6
8
10
400
300
Ta=75˚C
25˚C
200
–25˚C
100
0
1
12
3
10
30
100
300
1
1000
Cob — VCB
3
IO — VIN
104
5
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
Collector current IC (mA)
Collector to emitter voltage VCE (V)
VO=0.2V
Ta=25˚C
30
4
3
2
103
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
VCE=10V
0.001
0
102
101
10
3
1
0.3
0.1
1
0.03
0
0.1
0.3
1
3
10
Collector to base voltage
14
500
IC/IB=10
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
hFE — IC
30
100
VCB (V)
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221N
IC — VCE
VCE(sat) — IC
10
Collector current IC (mA)
140
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
120
100
80
0.3mA
60
0.2mA
40
0.1mA
20
IC/IB=10
VCE=10V
1
Ta=75˚C
0.1
25˚C
–25˚C
0.01
0
0
2
4
6
8
10
100
25˚C
240
–25˚C
160
80
1000
10
1
3
2
1000
VIN — IO
100
VO=5V
Ta=25˚C
1000
Input voltage VIN (V)
Output current IO (µA)
4
100
Collector current IC (mA)
IO — VIN
10000
f=1MHz
IE=0
Ta=25˚C
5
Ta=75˚C
320
Collector current IC (mA)
Cob — VCB
6
400
0
10
1
12
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
hFE — IC
480
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
160
100
10
VO=0.2V
Ta=25˚C
10
1
0.1
1
0
10
1
1
0.4
100
Collector to base voltage
VCB (V)
0.6
0.8
1
1.2
0.01
0.1
1.4
Input voltage VIN (V)
1
10
100
Output current IO (mA)
Characteristics charts of UN221T
IC — VCE
VCE(sat) — IC
160
Collector current IC (mA)
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
120
100
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
0
hFE — IC
1
Ta=75˚C
0.1
25˚C
–25˚C
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
VCE=10V
400
Ta=75˚C
320
25˚C
240
–25˚C
160
80
0
0.01
0
480
IC/IB=10
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
10
1
10
100
Collector current IC (mA)
1000
1
10
100
1000
Collector current IC (mA)
15
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — VCB
IO — VIN
10000
5
4
3
2
VIN — IO
100
VO=5V
Ta=25˚C
1000
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
100
10
VO=0.2V
Ta=25˚C
10
1
0.1
1
0
10
1
1
0.4
100
Collector to base voltage
VCB (V)
0.6
0.8
1
1.2
0.01
0.1
1.4
1
10
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UN221V
IC — VCE
VCE(sat) — IC
10
Collector current IC (mA)
120
IB=1.0mA
100
0.9mA
0.8mA
0.7mA
80
0.6mA
60
0.5mA
40
0.4mA
20
0.3mA
0.2mA
0
0
2
4
6
8
10
IC/IB=10
1
Ta=75˚C
0.1
25˚C
–25˚C
100
Ta=75˚C
120
25˚C
80
–25˚C
40
1
1000
4
3
2
100
1000
VIN — IO
100
VO=5V
Ta=25˚C
1000
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
IO — VIN
10000
Output current IO (µA)
Collector output capacitance Cob (pF)
160
Collector current IC (mA)
100
10
VO=0.2V
Ta=25˚C
10
1
0.1
1
0
1
10
Collector to base voltage
16
200
0
10
1
Cob — VCB
5
VCE=10V
0.01
12
Collector to emitter voltage VCE (V)
6
hFE — IC
240
Forward current transfer ratio hFE
Ta=25˚C
140
Collector to emitter saturation voltage VCE(sat) (V)
160
100
VCB (V)
1
0.4
0.6
0.8
1
1.2
Input voltage VIN (V)
1.4
0.01
0.1
1
10
Output current IO (mA)
100
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221Z
IC — VCE
VCE(sat) — IC
10
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
120
100
0.4mA
80
0.3mA
60
0.2mA
40
0.1mA
20
1
Ta=75˚C
0.1
25˚C
–25˚C
0
2
4
6
8
10
10
1
12
100
Collector current IC (mA)
Cob — VCB
IO — VIN
10000
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
5
4
3
2
320
Ta=75˚C
240
25˚C
–25˚C
160
80
1
1000
Collector to emitter voltage VCE (V)
6
400
0
0.01
0
Collector output capacitance Cob (pF)
VCE=10V
10
100
1000
Collector current IC (mA)
VIN — IO
100
VO=5V
Ta=25˚C
1000
Input voltage VIN (V)
Collector current IC (mA)
140
480
IC/IB=10
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
160
hFE — IC
100
10
VO=0.2V
Ta=25˚C
10
1
0.1
1
0
–1
–10
Collector to base voltage
–100
VCB (V)
1
0.4
0.6
0.8
1
1.2
Input voltage VIN (V)
1.4
0.01
0.1
1
10
100
Output current IO (mA)
17