RENESAS UPA2350T1P

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2350T1P
DUAL Nch MOSFET
FOR SWITCHING
DESCRIPTION
OUTLINE DRAWING (Unit: mm)
The μ PA2350T1P is a Dual N-channel MOSFET designed for
Lithium-Ion battery protection circuit.
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
(EFLIP).
TOP VIEW
•
•
•
Monolithic Dual MOSFET
The Drain connection on circuit board is unnecessary, because
Drains of 2MOSFET are internally connected.
2.5 V drive available and low on-state resistance
RSS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A)
RSS(on)2 = 37 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A)
RSS(on)3 = 44 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A)
RSS(on)4 = 55 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A)
Built-in G-S protection diode against ESD
Pb-free Bump
0.65
G2
1.62 ± 0.05
FEATURES
•
BOTTOM VIEW
1.62 ± 0.05
S2
0.65
G1
1-pin index mark S1
S1
Dot area (For in-house)
0.2 ± 0.05
4 - φ 0.3
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
ORDERING INFORMATION
PART NUMBER
μ PA2350T1P-E4-A
Note
PACKAGE
4-pin EFLIP-LGA
EQUIVALENT CIRCUIT
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
Remark "-E4" indicates the unit orientation (E4 only).
FET1
FET2
Gate1
Gate2
Gate
Protection
Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Source to Source Voltage (VGS = 0 V)
VSSS
20
Gate to Source Voltage (VSS = 0 V)
VGSS
±12
Note1
Source Current (DC)
6.0
IS(DC)
Note2
Source Current (pulse)
±60
IS(pulse)
Note1
Total Power Dissipation
1.3
PT
Channel Temperature
Tch
150
Storage Temperature
Tstg
−55 to +150
2
Notes 1. Mounted on ceramic board of 50 cm x 1.0 mm
2. PW ≤ 100 μs, Single Pulse
V
V
A
A
W
°C
°C
Source2
Source1
Body Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19739EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
μ PA2350T1P
ELECTRICAL CHARACTERISTICS (TA = 25°C) These are common to FET1 and FET2.
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
1
μA
±10
μA
1.5
V
Zero Gate Voltage Source Current
ISSS
VSS = 20 V, VGS = 0 V, TEST CIRCUIT 1
Gate Leakage Current
IGSS
VGS = ±12 V, VSS = 0 V, TEST CIRCUIT 2
Gate to Source Cut-off Voltage
VGS(off)
VSS = 10 V, IS = 1.0 mA, TEST CIRCUIT 3
0.5
1.0
| yfs |
VSS = 10 V, IS = 3.0 A, TEST CIRCUIT 4
2.5
8.0
RSS(on)1
VGS = 4.5 V, IS = 3.0 A, TEST CIRCUIT 5
22
28
35
mΩ
RSS(on)2
VGS = 4.0 V, IS = 3.0 A, TEST CIRCUIT 5
23
29
37
mΩ
RSS(on)3
VGS = 3.1 V, IS = 3.0 A, TEST CIRCUIT 5
24
33
44
mΩ
30
41
55
mΩ
Note
Forward Transfer Admittance
Source to Source On-state
Resistance
Note
S
RSS(on)4
VGS = 2.5 V, IS = 3.0 A, TEST CIRCUIT 5
Input Capacitance
Ciss
VSS = 10 V, VGS = 0 V, f = 1.0 MHz
542
pF
Output Capacitance
Coss
TEST CIRCUIT 7
132
pF
Reverse Transfer Capacitance
Crss
91
pF
Turn-on Delay Time
td(on)
VDD = 10 V, IS = 6.0 A,
24
ns
Rise Time
tr
VGS = 4.0 V, RG = 6.0 Ω,
165
ns
Turn-off Delay Time
td(off)
TEST CIRCUIT 8
Fall Time
tf
Total Gate Charge
QG
VDD = 16 V, VG1S1 = 4.0 V, IS = 6.0 A,
160
ns
150
ns
8.6
nC
0.9
V
TEST CIRCUIT 9
Body Diode Forward Voltage
Note
IF = 6.0 A, VGS = 0 V, TEST CIRCUIT 6
VF(S-S)
Note Pulsed
Test circuits are example of measuring the FET1 side.
TEST CIRCUIT 1 ISSS
TEST CIRCUIT 2 IGSS
S2
S2
When FET1 is
G2
measured, between
G2
GATE and SOURCE
A
of FET2 are shorted.
G1
VSS
A
VGS
S1
G1
S1
TEST CIRCUIT 3 VGS(off)
TEST CIRCUIT 4 | yfs |
S2
When FET1 is
S2
ΔIS/ΔVGS
G2
G2
measured, between
A
A
GATE and SOURCE
A
A
of FET2 are shorted.
G1
G1
VSS
VGS
S1
2
VSS
VGS
S1
Data Sheet G19739EJ1V0DS
μ PA2350T1P
TEST CIRCUIT 6 VF(S-S)
When FET1 is measured,
FET2 is added VGS +4.5 V.
TEST CIRCUIT 5 RSS(on)
S2
VSS/IS
G2
4.5 V
IF
G2
IS
VSS
VSS
G1
G1
V
V
VGS
=0V
VGS
S1
S1
TEST CIRCUIT 7
Ciss
Coss
Crss
S2
G2
S2
S2
VSS
Capacitance
Bridge
G1
G2
G2
VSS
VSS
G1
G1
Capacitance
Bridge
Capacitance
Bridge
S1
S1
S1
TEST CIRCUIT 8 td(on), tr, td(off), tf
S2
VGS
G2
VGS
V
Wave Form
RL
0
VGS
10%
90%
VSS
G1
PG.
VGS
0
VSS
RG
Wave Form
VDD
τ
S1
VSS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 9 QG
S2
G2
A
IG = 2 mA
RL
G1
PG.
50 Ω
VDD
S1
Data Sheet G19739EJ1V0DS
3
μ PA2350T1P
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.6
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
Mounted on ceramic board
of 50 cm2 x 1.0 mm
1.2
0.8
0.4
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
FORWARD BIAS SAFE OPERATING AREA
RSS(on) Limited
(V GS = 4.5 V)
PW =10 μ s
IS - Source Current - A
100 μ s
10
IS(pul s e)
400 μ s
1ms
IS(DC)
1
10 ms
0.1
100 ms
Single Pulse
P(FET1):P(FET2) = 1:1
M ounted on ceramic board of
50 cm2 × 1.0 mm
DC
0.01
0.1
1
10
100
VSS - Source to Source Voltage - V
rth(ch-A) - Transient Thermal Resistance - °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
P(FET1):P(FET2) = 1:1
4
Mounted on BT resin board of
40.5 x 25 x 1.5 mm
100
Mounted on ceramic board of
50 cm2 × 1.0 mm
10
1
0.1
100 μ
1m
150
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
100
125
10 m
100 m
1
PW - Pulse Width - s
Data Sheet G19739EJ1V0DS
10
100
1000
175
μ PA2350T1P
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
60
10
V GS = 4.5 V
IS - Source Current - A
IS - Source Current - A
50
3.1 V
40
30
20
2.5 V
TEST CIRCUIT 5
Pulsed
10
0
0
TEST CIRCUIT 3
V SS = 10 V
Pulsed
4.0 V
2
4
1
TA = 125 °C
75 °C
25 °C
−25 °C
0.1
0.01
0.001
6
0
0.5
VSS - Source to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
TEST CIRCUIT 3
VSS = 10 V
ID = 1.0 mA
0.8
0.6
0.4
0
50
100
2
2.5
FORWARD TRANSFER ADMITTANCE vs.
SOURCE CURRENT
150
10
TEST CIRCUIT 4
VSS = 10 V
Pulsed
TA = −25 °C
25 °C
75 °C
125 °C
1
0.1
0.01
0.1
1
10
Tch - Channel Temperature - °C
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
TEST CIRCUIT 5
Pulsed
80
VGS = 2.5 V
3.1 V
4.0 V
4.5 V
60
40
20
0
0.1
1
10
IS - Source Current - A
100
RSS(on) - Source to Source On-state Resistance - mΩ
VGS(off) - Gate to Source Cut-off Voltage - V
RSS(on) - Source to Source On-state Resistance - mΩ
1.2
-50
1.5
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1
1
100
TEST CIRCUIT 5
IS = 3.0 A
Pulsed
80
60
40
20
0
Data Sheet G19739EJ1V0DS
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
5
μ PA2350T1P
CAPACITANCE vs. SOURCE TO SOURCE
VOLTAGE
1000
100
80
TEST CIRCUIT 5
IS = 3.0 A
Pulsed
VGS = 2.5 V
3.1 V
4.0 V
4.5 V
60
Ciss, Coss, Crss - Capacitance - pF
RSS(on) - Source to Source On-state Resistance - mΩ
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
20
C iss
C oss
100
C r ss
TEST CIRCUIT 7
V GS = 0 V
f = 1.0 MHz
10
0
-50
0
50
100
0.1
150
4
TEST CIRCUIT 8
V DD = 10 V, V GS = 4.0 V
RG = 6.0 Ω
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
100
DYNAMIC INPUT CHARACTERISTICS
1000
tr
tf
100
td(of f )
td( on)
10
0.1
1
10
100
VSS = 4 V
10 V
16 V
3
2
1
TEST CIRCUIT 9
IS = 6.0 A
0
0
IS - Source Current - A
100
10
VGS = 2.5 V
0V
1
0.1
0.01
TEST CIRCUIT 6
Pulsed
0.001
0
0.5
1
1.5
2
2
4
6
QG - Gate Charge - nC
SOURCE TO SOURCE DIODE FORWARD VOLTAGE
IF - Diode Forward Current - A
10
VSS - Source to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
2.5
3
VF(S-S) - Source to Source Voltage - V
6
1
Data Sheet G19739EJ1V0DS
8
10
μ PA2350T1P
< Example of application circuit >
Lithium-Ion battery (1 cell) protection circuit
Lithium-Ion battery pack
Protection circuit
P+
Battery protection IC
LithiumIon battery
cell
P−
μ PA2350, μ PA2351, μ PA2352
<Notes for using this device safely>
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the
following contents. If used exceeding recommended conditions, there is a possibility of causing the device and
characteristic degradation.
1. This device is very thin device and should be handled with caution for mechanical stress. The distortion applied
to the device should become below 2000 × 10−6. If the distortion exceeds 2000 × 10−6, the characteristic of a
device may be degraded and it may result in failure.
2. Please do not damage the device when you handle it. The use of metallic tweezers has the possibility of giving
the wound. Mounting with the nozzle with clean point is recommended.
3. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result
failure.
4. When you wash the device mounted the board, carry out within our recommended conditions. If washed
exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
5. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance
directly. If it touches, the characteristic of a device may be degraded and it may result in failure.
6. When you coat the device after mounted on the board, please consult our company. NEC Electronics
recommends the epoxy resin of the semiconductor grade as a coating material.
7. Please refer to Figure 2 as an example of the Mounting Pad. Optimize the land pattern in consideration of
density, appearance of solder fillets, common difference, etc in an actual design.
8. The marking side of this device is an internal electrode. Please neither contact with terminals of other parts nor
take out the electrode.
Data Sheet G19739EJ1V0DS
7
μ PA2350T1P
Figure 1
Recommended soldering conditions of INFRARED REFLOW
Maximum temperature (Package's surface temperature)
Time at maximum temperature
Time of temperature higher than 220°C
Preheating time at 160 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (Mass percentage)
: 260°C or below
: 10 s or less
: 60 s or less
: 60 to 120 s
: 3 times
: 0.2% or less
(Main heating)
to 10 s
Package's surface
temperature (°C)
260°C MAX.
220°C
180°C
to 60 s
160°C
60 to 120 s
(Preheating)
Time(s)
Infrared Reflow Temperature Profile
Figure 2
The example of the Mounting Pad (Unit : mm)
4 - φ 0.30
0.65
0.65
Figure 3
REEL SIDE
The unit orientation
LEADER SIDE
TOP VIEW
8
Data Sheet G19739EJ1V0DS
S2
S2
G2
G2
S1
S1
G1
G1
μ PA2350T1P
• The information in this document is current as of April, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1