RENESAS NP90N055VDG

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N055VDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N055VDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP90N055VDG-E1-AY
NP90N055VDG-E2-AY
LEAD PLATING
PACKING
PACKAGE
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZP) typ. 0.27 g
Note
Note
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• Logic level
• Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 45 A)
RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±90 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
ID(DC)
±90
A
ID(pulse)
±200
A
PT1
105
W
Total Power Dissipation (TA = 25°C)
PT2
1.2
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Storage Temperature
Repetitive Avalanche Current
Note2
IAR
33
A
Repetitive Avalanche Energy
Note2
EAR
111
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.43
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19792EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
NP90N055VDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 55 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
VDS = VGS, ID = 250 μA
1.4
2.5
V
| yfs |
VDS = 5 V, ID = 45 A
30
RDS(on)1
VGS = 10 V, ID = 45 A
4.8
6.0
mΩ
RDS(on)2
VGS = 4.5 V, ID = 35 A
6.0
10.5
mΩ
Input Capacitance
Ciss
VDS = 25 V,
4600
6900
pF
Output Capacitance
Coss
VGS = 0 V,
390
590
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
240
440
pF
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 45 A,
17
34
ns
Rise Time
tr
VGS = 10 V,
13
33
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
76
152
ns
Fall Time
tf
7
18
ns
Total Gate Charge
QG
VDD = 44 V,
90
135
nC
Gate to Source Charge
QGS
VGS = 10 V,
13
nC
QGD
ID = 90 A
26
nC
VF(S-D)
IF = 90 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 90 A, VGS = 0 V,
38
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
45
nC
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
Gate to Drain Charge
Body Diode Forward Voltage
Note
66
S
1.5
V
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D19792EJ1V0DS
td(on)
ton
tf
toff
NP90N055VDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
125
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
100
75
50
25
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
R
(o
DS
(V
n)
GS
ID(pulse)
d
it e
Lim V )
0
i
=1
ID(DC)
PW
=
1i 0
0
μs
1i
DC
i
ms
i
m
s
D
er
wn
d
it e
Lim
d
it e
im
nL
o
ed
ak
io
at
Br
ip
iss
1
1i 0
y
ar
nd
co
Se
10
w
Po
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
1000
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 1.43°C/W
1
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19792EJ1V0DS
3
NP90N055VDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
250
1000
100
ID - Drain Current - A
ID - Drain Current - A
200
10 V
150
VGS = 4.5 V
100
50
1
0.1
0.01
0.001
Pulsed
0
VDS = 10 V
Pulsed
0.0001
0
0.5
1
1.5
2
2.5
3
0
1
4
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2
1
VDS = VGS
ID = 250 μA
0
-75
-25
25
75
125
175
100
Tch = −55°C
−25°C
25°C
75°C
10
1
0.1
1
8
VGS = 4.5 V
10 V
2
Pulsed
0
1
10
100
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
10
4
10
ID - Drain Current - A
12
6
125°C
175°C
VDS = 5 V
Pulsed
225
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
3
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
ID - Drain Current - A
4
2
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
10
12
ID = 45 A
Pulsed
10
8
6
4
2
0
0
4
8
12
16
VGS - Gate to Source Voltage - V
Data Sheet D19792EJ1V0DS
20
NP90N055VDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
16
14
12
VGS = 4.5 V
8
6
10 V
4
ID = 45 A
Pulsed
2
10000
Coss
1000
-25
25
75
125
175
100
0.01
225
SWITCHING CHARACTERISTICS
1
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
50
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
0.1
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
td(off)
100
tf
td(on)
10
tr
VDD = 28 V
VGS = 10 V
RG = 0 Ω
1
0.1
10
VDD = 44 V
28 V
11 V
40
8
30
6
VGS
20
10
4
2
VDS
ID = 90 A
0
1
10
100
0
20
ID - Drain Current - A
40
60
80
0
100
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
1000
100
10 V
10
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
Crss
VGS = 0 V
f = 1 MHz
0
-75
Ciss
VGS - Gate to Source Voltage - V
10
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
VGS = 0 V
1
0.1
0.01
Pulsed
0.001
0
0.2
0.4
0.6
0.8
1
1.2
di/dt = 100 A/μs
VGS = 0 V
10
1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet D19792EJ1V0DS
0.1
1
10
100
IF - Diode Forward Current - A
5
NP90N055VDG
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZP)
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
1.13
2
3
0.8
1
1.14 MAX.
0.51 MIN.
4.0 MIN.
6.1±0.2
10.4 MAX. (9.8 TYP.)
4
No Plating
0 to 0.25
0.5±0.1
0.76±0.12
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D19792EJ1V0DS
NP90N055VDG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
90N055
Abbreviation of part number
Pb-free plating marking
DG
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP90N055VDG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Soldering Conditions
Maximum temperature (Package's surface temperature): 260°C or below
Recommended
Condition Symbol
IR60-00-3
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19792EJ1V0DS
7
NP90N055VDG
• The information in this document is current as of May, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets,
etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or
types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E