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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N06VLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N06VLG-E1-AY NP90N06VLG-E2-AY LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZP) typ. 0.27 g Note Note Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current rating ID(DC) = ±90 A • Low input capacitance Ciss = 4600 pF TYP. • Designed for automotive application and AEC-Q101 qualified (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±90 A ID(pulse) ±180 A Total Power Dissipation (TC = 25°C) PT1 105 W Total Power Dissipation (TA = 25°C) Channel Temperature PT2 Tch 1.2 175 W °C Storage Temperature Drain Current (pulse) Note1 Tstg Note2 −55 to +175 °C Repetitive Avalanche Current IAR 32 A Repetitive Avalanche Energy Note2 EAR 102 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.43 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19794EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan 2009 NP90N06VLG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA VGS(th) VDS = VGS, ID = 250 μA 1.4 2.5 V | yfs | VDS = 5 V, ID = 45 A 30 RDS(on)1 VGS = 10 V, ID = 45 A 6.2 7.8 mΩ RDS(on)2 VGS = 4.5 V, ID = 35 A 7.5 12.5 mΩ Input Capacitance Ciss VDS = 25 V, 4600 6900 pF Output Capacitance Coss VGS = 0 V, 370 560 pF Reverse Transfer Capacitance Crss f = 1 MHz 220 400 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 45 A, 17 34 ns Rise Time tr VGS = 10 V, 13 33 ns Turn-off Delay Time td(off) RG = 0 Ω 76 152 ns Fall Time tf 7 18 ns Total Gate Charge QG VDD = 48 V, 90 135 nC Gate to Source Charge QGS VGS = 10 V, 13 nC QGD ID = 90 A 26 nC VF(S-D) IF = 90 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 90 A, VGS = 0 V, 38 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 56 nC Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note 66 S 1.5 V Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D19794EJ1V0DS td(on) ton tf toff NP90N06VLG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 125 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 100 75 50 25 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 R ( DS ) on G (V S d it e Li m V ) i0 1 = ID(pulse) PW = ID(DC) 1i 0 0 DC μs i 1i m i m s y ar nd i ss wn d it e im nL o ed ak io at Br ip d it e Lim TC = 25°C Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 0.1 1i 0 co Se D er 1 s 10 w Po ID - Drain Current - A 1000 Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 1.43°C/W 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D19794EJ1V0DS 3 NP90N06VLG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 200 1000 ID - Drain Current - A ID - Drain Current - A 100 150 10 V VGS = 4.5 V 100 50 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C 10 1 0.1 0.01 0.001 VDS = 10 V Pulsed Pulsed 0.0001 0 0.5 1 1.5 2 0 2.5 1 4 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 2 1 VDS = VGS ID = 250 μA 0 -75 -25 25 75 125 175 100 Tch = −55°C −25°C 25°C 75°C 125°C 175°C 10 VDS = 5 V Pulsed 1 0.1 225 1 12 10 VGS = 4.5 V 6 10 V 4 2 Pulsed 0 1 10 100 100 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 14 8 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 3 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 14 ID = 45 A Pulsed 12 10 8 6 4 2 0 0 4 8 12 16 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 2 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V 0 Data Sheet D19794EJ1V0DS 20 NP90N06VLG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 20 16 VGS = 4.5 V 8 10 V 4 ID = 45 A Pulsed 10000 Coss 1000 -25 25 75 125 175 100 0.01 225 Tch - Channel Temperature - °C 1 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50 VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns 0.1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(off) 100 tf td(on) 10 tr VDD = 30 V VGS = 10 V RG = 0 Ω 1 0.1 10 VDD = 48 V 30 V 12 V 40 8 30 6 VGS 20 10 4 2 VDS ID = 90 A 0 1 10 100 0 20 ID - Drain Current - A 40 60 80 0 100 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 100 10 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Crss VGS = 0 V f = 1 MHz 0 -75 Ciss VGS - Gate to Source Voltage - V 12 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10 V VGS = 0 V 1 0.1 0.01 di/dt = 100 A/μs VGS = 0 V Pulsed 0.001 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet D19794EJ1V0DS 0.1 1 10 100 IF - Diode Forward Current - A 5 NP90N06VLG PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZP) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 1.13 2 3 0.8 1 1.14 MAX. 0.51 MIN. 4.0 MIN. 6.1±0.2 10.4 MAX. (9.8 TYP.) 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D19794EJ1V0DS NP90N06VLG TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION 90N06 Abbreviation of part number Pb-free plating marking LG Lot code RECOMMENDED SOLDERING CONDITIONS The NP90N06VLG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Recommended Condition Symbol IR60-00-3 Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Partial heating Maximum temperature (Pin temperature): 350°C or below P350 Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D19794EJ1V0DS 7 NP90N06VLG • The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. 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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E