Preliminary Data Sheet μ PA2763 R07DS0003EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A) • Low Ciss 2100 pF TYP. • Built-in gate protection diode • Thin type surface mount package with heat spreader (8-pin HVSON) • RoHS Compliant Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings 100 ±20 ±42 ±84 1.5 4.6 83 150 -55 to + 150 24.7 61.0 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) 83.3 °C/W Channel to Case (Drain) Thermal Resistance Rth(ch-C) 1.5 °C/W Notes: ∗1. PW ≤ 10 μ s, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗ 3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μ H, VGS = 20→0 V R07DS0003EJ0100 Rev.1.00 May 31, 2010 Page 1 of 6 μ PA2763 Chapter Title Electrical Characteristics (TA = 25°C) Item Symbol Zero Gate Voltage Drain Current Min Typ IDSS Max Unit Test Conditions 10 μA ±10 μA VGS = ±20 V, VDS = 0 V 4.0 V VDS = 10 V, ID = 1 mA VDS = 100 V, VGS = 0 V Gate Leakage Current IGSS Gate Cut-off Voltage VGS(off) 2.0 Forward Transfer Admittance ∗1 | yfs | 10 S VDS = 10 V, ID = 21 A Drain to Source On-state Resistance ∗1 RDS(on)1 18.0 23.0 mΩ VGS = 10 V, ID = 21 A RDS(on)2 19.0 28.0 mΩ VGS = 8 V, ID = 21 A Input Capacitance Ciss 2100 pF Output Capacitance Coss 350 pF Reverse Transfer Capacitance Crss 130 pF VDS = 10 V VGS = 0 V f = 1 MHz Turn-on Delay Time td(on) 28 ns Rise Time tr 13 ns Turn-off Delay Time td(off) 73 ns Fall Time tf 11 ns Total Gate Charge QG 40 nC Gate to Source Charge QGS 11 nC Gate to Drain Charge QGD 13 nC 0.88 V IF = 42 A, VGS = 0 V Body Diode Forward Voltage ∗1 VF(S-D) VDD = 50 V, ID = 21 A, VGS = 10 V, RG = 10 Ω VDD = 50 V, VGS = 10 V, ID = 42 A Reverse Recovery Time trr 59 ns Reverse Recovery Charge Qrr 152 nC IF = 42A, VGS = 0 V, di/dt = 100A/μ s Gate Resistance RG 2.1 Ω f = 1 MHz Note: ∗1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 τ = 1 μs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω R07DS0003EJ0100 Rev.1.00 May 31, 2010 RL VDD Page 2 of 6 μ PA2763 Chapter Title Typical Characteristics (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA 1000 120 100 10 1 75 100 125 150 s 50 1 25 TC = 25°C Single Pulse 0.1 175 μs m 0 0 11 0 1 0.01 0 10 DC Power Dissipation Lim ited 0.1 20 =1 s 40 PW d it e ) Li m 1 0 V ) ON =1 S( R D V GS ID(DC) = 42 A t (a 1 1 60 ID(pul se) = 84 A 100 ID - Drain Current - A 80 M ount ed on a glass epoxy board of 25.4 mm × 25.4 mm × 0.8 mmt 11m dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 1 10 100 1000 VDS - Drain to Source Voltage - V TC - Ambient Temperature - °C TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single pulse Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 1.5°C/W 1 0.1 Rth(ch-A): Mounted on a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) 0.01 0.0001 100 μ 10.001 m 0.01 10 m 0.1m 100 1 1 10 10 100 100 1000 1000 PW - Pulse Width – s FORWARD TRANSFER CHARACTERISTICS 100 4 1 0.1 VGS(off) - Gate Cut-off Voltage - V Tch = 150°C 125°C 75°C 25°C -25°C -55°C 10 ID - Drain Current - A GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0.01 0.001 V DS = 10 V Pulsed 0.0001 0 1 2 3 4 5 VGS - Gate to Source Voltage - V R07DS0003EJ0100 Rev.1.00 May 31, 2010 6 3 2 1 0 -75 Pulsed V DS = 10 V ID = 1 mA -25 25 75 125 175 Tch - Channel Temperature - °C Page 3 of 6 μ PA2763 Chapter Title Tch = 150°C 125°C 75°C 25°C -25°C -55°C 1 V DS = 10 V Pulsed 0.1 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A Pulsed 60 50 40 30 V GS = 8.0 V 20 10 V 10 0 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 70 Pulsed 60 ID = 33.8 A 21 A 8.4 A 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Pulsed 60 50 40 30 V GS = 8.0 V 10 ID = 21 A 0 -75 -25 Coss 100 Crss V GS = 0 V f = 1 MHz 10 0.1 1 10 VDS - Drain to Source Voltage - V R07DS0003EJ0100 Rev.1.00 May 31, 2010 100 VDS - Drain to Source Voltage - V 1000 25 75 125 175 Tch - Channel Temperature - °C 100 Ciss 10 V 20 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10000 Ciss, Coss, Crss - Capacitance - pF 70 V DS 80 10 V DD = 80 V 50 V 20 V 8 V GS 60 6 40 4 20 2 ID = 42 A 0 0 10 20 30 40 0 50 QG - Gate Charge - nC Page 4 of 6 VGS - Gate to Source Voltage - V 10 RDS(on) - Drain to Source On-state Resistance - mΩ 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT μ PA2763 Chapter Title SOURCE TO DRAIN DIODE FORWARD VOLTAGE SWITCHING CHARACTERISTICS 100 1000 V GS = 10 V , tr, td(off), tf - Switching Time - ns 1 0.1 Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 td(on) IF - Diode Forward Current - A 0V 10 td(on) tr tf 10 V DD = 50 V V GS = 10 V RG = 10 Ω 1 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs DIODE FORWARD CURRENT SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000 100 100 10 di/dt = 100 A/μs V GS = 0 V 1 0.1 1 10 IF - Diode Forward Current - A R07DS0003EJ0100 Rev.1.00 May 31, 2010 100 IAS – Single Avalanche Current - A trr – Reverse Recovery Time – ns td(off) 100 IAS = 24.7 A EAS = 61.0 mJ 10 1 0.00001 V DD = 50 V V GS = 20 V →0 V RG = 25 Ω 0.0001 0.001 0.01 L – Inductive Load - H Page 5 of 6 μ PA2763 Chapter Title Equivalent Circuit 1.27 Package Drawing (Unit: mm) 1 5 +0.1 5 ±0.2 6 4 0.42 −0.05 7 3 6 ±0.2 5.15 ±0.2 8 2 0.10 S 4.1 ±0.2 1.0 MAX. 1 0.2 0.27 ±0.05 0 +0.05 −0 0.10 M 5.4 ±0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 3.65 ±0.2 0.6 ±0.15 0.7 ±0.15 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device Ordering Information Part No. μ PA2763T1A-E1-AY ∗1 μ PA2763T1A-E2-AY ∗1 Lead Plating Pure Sn Packing Tape 3000 p/reel Package 8-pin HVSON (0.1 g TYP.) Note: ∗1. This product does not contain Pb in the external electrode. R07DS0003EJ0100 Rev.1.00 May 31, 2010 Page 6 of 6 μ PA2763 Revision History Rev. 1.00 Date May 31, 2010 Description Summary Page - First Edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan, R.O.C. Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0