P R E L IMINA R Y P R ODUC T INF OR MA T ION B IP OL AR ANAL OG INT E G R AT E D C IR C UIT P C 8232T 5N S iG e: C L OW NOIS E AMP L IF IE R F OR G P S DE S C R IP T ION T he P C 8232T 5N is a s ilicon germanium carbon (S iG e:C ) monolithic integrated circuit des igned as low nois e amplifier for G P S . T his device exhibits low nois e figure and high power gain characteris tics , s o this IC can improve the s ens itivity of G P S receiver. In addition, the P C 8232T 5N which is included output matching circuit contributes to reduce external components and s ys tem s ize. T he package is 6-pin plas tic T S O N (T hin S mall O ut-line Non-leaded) s uitable for s urface mount. T his IC is manufactured us ing our UHS 4 (Ultra High S peed P roces s ) S iG e:C bipolar proces s . F E AT UR E S • Low nois e : NF = 0.95 dB T Y P . @ fin = 1575 MHz • High gain : G P = 17 dB T Y P . @ fin = 1575 MHz • Low current cons umption : I C C = 3.0 mA T Y P . @ V C C = 3.0V • B uilt-in power-s ave function • High-dens ity s urface mounting : 6-pin plas tic T S O N package (1.5 1.5 0.37 mm) • Included output matching circuit • Included very robus t bandgap regulator (S mall V C C and T A dependence) • Included protection circuits for E S D AP P L IC AT ION • Low nois e amplifier for G P S OR DE R ING INF OR MAT ION P art Number Order Number P ackage Marking P C 8232T 5N-E 2 P C 8232T 5N-E 2-A 6-pin plas tic T S ON 6L (P b-F ree) S upplying F orm ・8mm wide embos s ed taping ・P in 1, 6 face the perforation s ide of the tape ・Qty 3 kpcs /reel R emark T o order evaluation s amples , contact your nearby s ales office. P art number for s ample order: P C 8232T 5N C aution O bs erve prec autions when handling bec aus e thes e devic es are s ens itive elec tros tatic dis c harge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. (4th E dition) Date P ublis hed Augus t 2006 C P (N) P C 8232T 5N P IN C ONNE C T IONS ( T op View ) 2 ６Ｌ 1 3 ( B ottom View ) 6 6 1 5 5 2 4 4 3 INT E R NAL B L OC K DIAG R AM 6 6 V cc GND 22 5 5 OUT P UT 4 P ower S ave INP UT 3 2 BBias ias V cc 1 P in No. P in Name 1 V cc 2 G ND 3 INP UT 4 P ower S ave 5 OUT P UT 6 V cc E XP OS E D P AD G ND P C 8232T 5N AB S OL UT E MAXIMUM R AT ING S P arameter S ymbol T es t C onditions R atings Unit S upply V oltage VCC T A = + 25°C 4.0 V P ower-S aving V oltage VPS T A = + 25°C 4.0 V T otal P ower Dis s ipation P tot T A = + 85°C 150 mW Operating Ambient T emperature TA 40 to + 85 C S torage T emperature T s tg 55 to + 150 C Input P ower P in Note + 10 Note Mounted on double-s ided copper-clad 50 50 dB m 1.6 mm epoxy glas s P W B R E C OMME NDE D OP E R AT ING R ANG E P arameter S ymbol MIN. T YP . MAX. Unit S upply V oltage VCC 2.5 3.0 3.3 V Operating Ambient T emperature TA 40 + 25 + 85 C P ower S ave T urn-on V oltage V P S on 1.6 － V cc V P ower S ave T urn-off V oltage V P S off 0 － 0.4 V E L E C T R IC AL C HAR AC T E R IS T IC S ( T A = +25 C , V C C = V P S = 3.0 V , f in = 1575MHz, unles s otherwis e s pecified ) P arameter C ircuit C urrent S ymbol IC C T es t C onditions MIN. T YP . MAX. Unit 2.3 3.0 4.1 mA At P ower-S aving Mode (V P S = 0 V ) － － 1 A P in=-35dB m 15 17 19 dB No s ignal (V P S = 3.0 V ) P ower G ain GP Nois e F igure NF － 0.95 1.25 dB Input R eturn Los s R L in 7 10 － dB Output R eturn Los s R L out 10 20 － dB Is olation IS L － 40 － dB Input 3rd Order Dis tortion I Intercept IIP 3 － −8 － dB m － －21 － dB m fin1=1574MHz, fin2=1575MHz P oint G ain 1 dB C ompres s ion Intput P ower P in (1 dB ) 3 P C 8232T 5N T E S T C IR C UIT S Vcc ○ 1 6 2 5 1000pF 1000pF ◎ OUTP UT 1pF ◎ 3 100pF 5.6nH P AC K AG E DIME NS IONS 6-P IN P L AS T IC T S ON (UNIT : mm) 4 4 ○ Vps P C 8232T 5N NOT E ON C OR R E C T US E (1) O bs erve precautions for handling becaus e of electro-s tatic s ens itive devices . (2) F orm a ground pattern as widely as pos s ible to minimize ground impedance (to prevent undes ired os cillation). All the ground pins mus t be connected together with wide ground pattern to decreas e impedance difference. (3) T he bypas s capacitor s hould be attached to V C C line. (4) Do not s upply DC voltage to INP UT pin. R E C OMME NDE D S OL DE R ING C ONDIT IONS T his product s hould be s oldered and mounted under the following recommended conditions . F or s oldering methods and conditions other than thos e recommended below, contact your nearby s ales office. S oldering Method Infrared R eflow W ave S oldering P artial Heating S oldering C onditions C ondition S ymbol P eak temperature (package s urface temperature) : 260 C or below T ime at peak temperature : 10 s econds or les s T ime at temperature of 220 C or higher : 60 s econds or les s P reheating time at 120 to 180 C : 120 30 s econds Maximum number of reflow proces s es : 3 times Maximum chlorine content of ros in flux (% mas s ) : 0.2%(W t.) or below P eak temperature (molten s older temperature) : 260 C or below T ime at peak temperature : 10 s econds or les s P reheating temperature (package s urface temperature) : 120 C or below Maximum number of flow proces s es : 1 time Maximum chlorine content of ros in flux (% mas s ) : 0.2%(W t.) or below P eak temperature (pin temperature) : 350 C or below S oldering time (per s ide of device) : 3 s econds or les s Maximum chlorine content of ros in flux (% mas s ) : 0.2%(W t.) or below IR 260 W S 260 HS 350 C aution Do not us e different s oldering methods together (exc ept for partial heating). 5 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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