NEC 3SK135A-T1

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK135A
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
PACKAGE DIMENSIONS
FEATURES
in millimeters
• Suitable for use as RF amplifier in UHF TV tuner.
4
1
–0.06
0.16 +0.1
+0.1
5˚ 0.4–0.05
5˚
5˚
0 to 0.1
V
V
V
mA
mW
˚C
˚C
0.6+0.1
–0.05
20
±10
±10
25
200
150
–65 to +150
*RL ≥ 10 kΩ
0.4+0.1
–0.05
0.8
VDSX
VG1S*
VG2S*
ID
PT
Tch
Tstg
2.9±0.2
(1.9)
0.95 0.95
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
+0.2
1.1–0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
3
2
: 2.7 dB TYP.
1.5+0.2
–0.1
(1.9)
• High Gps : 18 dB TYP.
• Low NF
2.8+0.2
–0.3
0.4+0.1
–0.05
• Low Crss : 0.02 pF TYP.
5˚
1. Source
2. Drain
3. Gate 2
4. Gate 1
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
Drain to Source Breakdown Voltage
BVDSX
20
IDSS
0.01
Drain Current
TYP.
MAX.
UNIT
V
6
mA
TEST CONDITIONS
VG1S = VG2S = –2 V, ID = 10 µA
VDS = 5 V, VG2S = 4 V, VG1S = 0
Gate1 to Source Cutoff Voltage
VG1S(off)
–2.0
V
VDS = 10 V, VG2S = 4 V, ID = 10 µA
Gate2 to Source Cutoff Voltage
VG2S(off)
–0.7
V
VDS = 10 V, VG1S = 4 V, ID = 10 µA
Gate1 Reverse Current
IG1SS
±20
nA
VDS = 0, VG1S = ±8 V, VG2S = 0
Gate2 Reverse Current
IG2SS
±20
nA
VDS = 0, VG2S = ±8 V, VG1S = 0
Forward Transter Admittance
| yfs |
14
ms
VDS = 5 V, VG2S = 4 V, ID = 10 mA,
f = 1 kHz
Input Capacitance
Ciss
1.5
2.5
pF
VDS = 10 V, VG2S = 4 V,
Output capacitance
Coss
0.5
1.0
1.5
pF
ID = 10 mA, f = 1 MHz
Reverse Transfer Capacitance
Crss
0.02
0.03
pF
Power Gain
Gps*
Noise Figure
NF*
16
18
18
2.7
4.5
dB
VDS = 10 V, VG2S = 4 V, ID = 10 mA,
dB
f = 900 MHz
IDSS Classification
Class
Marking
IDSS
L/LS*
K/KS*
U65
U66
0.01 to 2
1 to 6
Document No. P10411EJ1V0DS00 (1st edition)
(Previous No. TN-1758)
Date Published August 1995 P
Printed in Japan
* Old specification/New specification
©
1995
3SK135A
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
5
4
400
ID – Drain Current – mA
PT – Total Power Dissipation – mW
VG2S = 4 V
300
200
VG1S = 0
3
2
–0.1 V
1
100
–0.2 V
–0.3 V
–0.4 V
0
25
75
50
100
125
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
| yfs | – Forward Transter Admittance – mS
VDS = 10 V
|D – Drain Current – mA
20
15
6V
10
2V
4V
5
1V
VG2S = 0
0
–1.0
0
6V
VDS = 10 V
f = 1 MHz
4V
20
2V
15
1V
10
5
VG2S = 0
0
+1.0
VG1S – Gate1 to Source Voltage – V
VG1S – Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
DRAIN CURRENT
OUTPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
Coss – Output Capacitance – pF
Ciss – Input Capacitance – pF
25
0
–1.0
+1.0
VDS = 10 V
f = 1 MHz
4
3
ID = 10 mA at VG2S = 4 V
2
ID = 5 mA at VG2S = 4 V
1
0
1.0
2.0
3.0
ID – Drain Current – mA
2
20
VDS – Drain to Source Voltage – V
25
0
–1.0
10
0
TA – Ambient Temperature – ˚C
4.0
VDS = 10 V
f = 1 MHz
2
1
ID = 10 mA at VG2S = 4 V
ID = 5 mA at VG2S = 4 V
0
–1.0
0
1.0
2.0
3.0
VG2S – Gate2 to Source Voltage – V
4.0
3SK135A
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
Gps
20
6
4
Gps – Power Gain – dB
NF – Noise Figure – dB
8
10
0
NF
–10
2
–20
f = 900 MHz
IDS = 10 mA
(at VDS = 10 V,
VG2S = 4 V)
IDS = 10 mA
(at VDS = 5 V,
VG2S = 3 V)
0
–2.0
0
2.0
4.0
6.0
8.0
VG2S – Gate2 to Source Voltage – V
3
3SK135A
S-PARAMETER, Y-PARAMETER
S1, Y1
CONDITION
VDS = 10 V
VG2S = 4 V
IDS = 10 mA
S1-MAG & ANGL
FREQ.
50
100
200
300
400
500
600
700
800
900
1000
1.023
0.989
0.966
0.923
0.871
0.841
0.776
0.676
0.631
0.575
0.537
Yl-MAG & ANGL
FREQ.
50
100
200
300
400
500
600
700
800
900
1000
S2, Y2
CONDITION
VDS = 10 V
VG2S = 4 V
IDS = 5 mA
4
–2
–8
–11
–22
–23
–33
–34
–41
–43
–47
–49
0.405
1.382
1.937
3.962
4.327
6.197
6.589
8.151
8.287
8.404
8.085
1.820
1.758
1.778
1.758
1.758
1.718
1.738
1.718
1.698
1.660
1.567
0.411
1.385
1.940
3.946
4.259
6.358
6.724
8.534
8.961
9.289
8.676
12
173
165
153
139
128
113
101
88
76
64
48
0.002
0.002
0.003
0.003
0.008
0.017
0.034
0.058
0.089
0.130
0.172
21
125
85
80
77
69
71
62
53
47
44
46
17.780
17.940
18.399
19.044
20.003
20.688
21.986
23.697
24.190
23.916
22.726
11
1.023
0.989
0.966
0.933
0.891
0.851
0.794
0.684
0.624
0.556
0.501
Y2-MAG & ANGL
FREQ.
50
100
200
300
400
500
600
700
800
900
1000
21
11
S2-MAG & ANGL
FREQ.
50
100
200
300
400
500
600
700
800
900
1000
11
–6
–9
–18
–26
–36
–45
–58
–69
–81
–94
–103
1.567
1.531
1.549
1.531
1.567
1.531
1.567
1.549
1.549
1.531
1.462
11
0.020
0.024
0.027
0.033
0.086
0.205
0.434
0.803
1.269
1.878
2.492
15.215
15.540
16.026
16.402
17.533
18.279
19.600
21.366
22.388
22.717
21.911
1.023
0.977
0.977
0.966
0.933
0.912
0.902
0.891
0.881
0.881
0.891
174
166
153
140
129
114
102
88
76
64
48
–93
–72
–115
2
43
42
35
25
16
2
–9
0.002
0.003
0.003
0.003
0.008
0.017
0.035
0.062
0.095
0.143
0.191
0.234
0.715
1.226
1.773
2.069
2.801
2.754
2.973
2.985
2.079
4.327
0.022
0.027
0.028
0.032
0.087
0.207
0.444
0.851
1.380
2.120
2.855
–176
71
80
78
68
67
60
58
59
65
90
22
64
118
49
177
–148
–157
–161
–174
176
163
144
1.035
0.989
0.977
0.977
0.944
0.923
0.912
0.902
0.891
0.891
0.891
12
–5
–8
–18
–24
–35
–43
–56
–67
–79
–92
–103
0
–4
–7
–10
–11
–15
–15
–18
–21
–20
–34
22
12
21
126
85
80
79
73
72
64
55
48
43
43
86
102
56
167
–153
–160
–166
–178
173
160
142
12
21
–2
–8
–11
–22
–23
–34
–35
–43
–46
–51
–52
22
0
–4
–7
–10
–11
–15
–16
–19
–22
–22
–35
22
–115
–56
–122
13
48
46
41
31
21
7
–7
0.354
0.690
1.229
1.759
2.034
2.770
2.914
3.157
3.168
2.336
4.332
–178
80
80
82
71
69
64
62
61
67
90
3SK135A
900 MHz Gps AND NF TEST CIRCUIT
VG2S (4 V)
1 000 pF
47 kΩ
1 000 pF
~ 10 pF
~ 10 pF
INPUT
50 Ω
~ 10 pF
~ 10 pF
OUTPUT
50 Ω
L2
L1
47 kΩ
RFC
1 000 pF
1 000 pF
L1, L2 35 × 5 × 0.2 mm
VG1S
VDD (10 V)
VDS = 10 V, VG2S = 4 V, ID = 10 mA
5
3SK135A
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2