UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 32mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified Lead-free: UT4411L Halogen-free : UT4411G SYMBOL Drain Gate Source ORDERING INFORMATION Normal UT4411-S08-R UT4411-S08-T Ordering Number Lead Free Plating UT4411L-S08-R UT4411L-S08-T Halogen Free UT4411G-S08-R UT4411G-S08-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package Packing SOP-8 SOP-8 Tape Reel Tube 1 of 6 QW-R502-191.B UT4411 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-191.B UT4411 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -8 A Pulsed Drain Current IDM -40 A Power Dissipation PD 3 W ℃ Junction Temperature TJ +150 ℃ Strong Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction-to-Ambient MIN TYP 54 MAX 75 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =-250 µA VDS =-24 V, VGS =0 V VDS =0 V, VGS = ±20 V -30 VGS(TH) ID(ON) VDS =VGS, ID =-250 µA VDS =-5V, VGS =-10 V VGS =-10 V, ID =-8 A VGS =-4.5 V, ID =-5 A -1.2 -40 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =-15V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =-15V, VGS =-10V, Gate Source Charge QGS ID =-8A Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=-10V,VDS=-15V, RL=1.8Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-1A,VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=-8A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR IF=-8 A, dI/dt=100A/μs Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤0.5% max. 3. Surface mounted on 1 in 2 copper pad of FR4 board, t≤10s. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 ±100 -2 -2.4 24.5 41 32 55 920 190 122 1120 18.4 2.7 4.9 7.1 3.4 18.9 8.4 23 -0.76 -1 -4.2 27 21.5 12.5 V µA nA V A mΩ pF nC ns V A ns nC 3 of 6 QW-R502-191.B UT4411 TYPICAL CHARACTERISTICS Drain Current,-ID (A) Drain Current,-ID (A) Power MOSFET On-Resistance vs. Drain Current and Gate Voltage ID=-7.5A 55 VGS=-4.5V 50 45 40 35 30 25 VGS=-10V 20 15 VGS=-10V 1.40 1.20 VGS=-4.5V 1.00 0.80 10 0 5 10 15 20 Drain Current,-ID (A) 25 0 On-Resistance vs. Gate-Source Voltage 80 1.0E+01 ID=-7.5A 70 Reverse Drain Current,-IS (A) Drain to Source On-Resistance, RDS(ON) (mΩ) On-Resistance vs. Junction Temperature 1.60 Normalized On-Resistance Drain to Source On-Resistance, RDS(ON) (mΩ) 60 60 50 125℃ 40 25℃ 30 20 10 0 3 4 5 6 8 9 7 Gate to Source Voltage,-VGS (V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 75 100 125 150 50 Junction Temperature (℃) 175 Body-Diode Characteristics 1.0E+00 125℃ 1.0E-01 1.0E-02 1.0E-03 25℃ 1.0E-04 1.0E-05 1.0E-06 0.0 1.0 0.4 0.6 0.2 0.8 Body Diode Forward Voltage,-VSD (V) 4 of 6 QW-R502-191.B UT4411 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance (pF) Gate to Source Voltage,-VGS (V) 100.0 Maximum Forward Biased Safe Operating Area (Note E) RDS(ON) Limited 10.0 100μs 10ms 0.1s TJ(Max)=150℃ TA=25℃ 10μs 30 1ms 20 1s 10s 1.0 40 Single Pulse Power Rating Junctionto-Ambient (Note E) 10 DC 1 10 100 Drain to Source Voltage,-VDS (V) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Normalized Transient Thermal Resistance,ZθJA 0.1 0.1 TJ(Max)=150℃ TA=25℃ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-191.B UT4411 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-191.B