UT54ACS245/UT54ACTS245 Radiation-Hardened Octal Bus Transceiver with Three-State Outputs FEATURES PINOUTS 20-Pin DIP Top View Three-state outputs drive bus line directly radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QML Q or V processes Flexible package - 20-pin DIP - 20-lead flatpack DIR A1 1 2 20 19 VDD G A2 3 18 B1 A3 4 17 B2 A4 5 16 B3 A5 A6 6 7 15 14 B4 B5 A7 A8 8 9 13 12 B6 B7 VSS 10 11 B8 DESCRIPTION The UT54ACS245 and the UT54ACTS245 are non-inverting octal bus transceivers designed for asynchronous two-way communication between data buses. The control function implementation minimizes external timing requirements. The devices allow data transmission from the A bus to the B bus or from the B bus to the A bus depending upon the logic level at the direction control (DIR) input. The enable input (G) disables the device so that the buses are effectively isolated. The devices are characterized over full military temperature range of -55 C to +125 C. FUNCTION TABLE ENABLE G DIRECTION CONTROL DIR OPERATION L L B Data To A Bus L H A Data To B Bus H X Isolation 20-Lead Flatpack Top View DIR 1 20 VDD A1 2 19 G A2 3 18 B1 A3 A4 4 5 17 16 B2 B3 A5 6 15 B4 A6 7 14 B5 A7 A8 VSS 8 9 10 13 12 11 B6 B7 B8 LOGIC SYMBOL G DIR A1 A2 A3 A4 A5 A6 A7 A8 (19) (1) (2) (3) G3 3 EN1 (BA) 3 EN2 (AB) (18) 1 B1 2 (17) (4) (16) (5) (6) (15) (7) (8) (9) (14) B2 B3 B4 B5 (13) B6 (12) B7 (11) B8 Note: 1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. 165 RadHard MSI Logic UT54ACS245/UT54ACTS245 LOGIC DIAGRAM DIR (1) (19) A1 (18) A2 B7 (9) (11) RadHard MSI Logic B6 (8) (12) A8 B5 (7) (13) A7 B4 (6) (14) A6 B3 (5) (15) A5 B2 (4) (16) A4 B1 (3) (17) A3 G (2) B8 166 UT54ACS245/UT54ACTS245 RADIATION HARDNESS SPECIFICATIONS 1 PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU Threshold 2 80 MeV-cm2/mg SEL Threshold 120 MeV-cm2/mg Neutron Fluence 1.0E14 n/cm2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.3 to 7.0 V VI/O Voltage any pin -.3 to VDD +.3 V TSTG Storage Temperature range -65 to +150 C TJ Maximum junction temperature +175 C TLS Lead temperature (soldering 5 seconds) +300 C Thermal resistance junction to case 20 C/W II DC input current 10 mA PD Maximum power dissipation 1 W JC Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS 167 SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage 4.5 to 5.5 V VIN Input voltage any pin 0 to VDD V TC Temperature range -55 to + 125 C RadHard MSI Logic UT54ACS245/UT54ACTS245 DC ELECTRICAL CHARACTERISTICS 7 (VDD = 5.0V 10%; V SS = 0V 6, -55 C < TC < +125 C) SYMBOL VIL VIH IIN PARAMETER CONDITION MIN Low-level input voltage 1 ACTS ACS High-level input voltage 1 ACTS ACS MAX UNIT 0.8 .3VDD V .5VDD .7VDD V Input leakage current ACTS/ACS VIN = VDD or VSS Low-level output voltage 3 ACTS ACS IOL = 12.0mA IOL = 100 A High-level output voltage 3 ACTS ACS IOH = -12.0mA IOH = -100 A IOZ Three-state output leakage current VO = VDD and VSS -30 30 A IOS Short-circuit output current 2 ,4 ACTS/ACS VO = VDD and VSS -300 300 mA Output current10 VIN = VDD or VSS 12 mA (Sink) VOL = 0.4V Output current10 VIN = VDD or VSS -12 mA (Source) VOH = VDD - 0.4V Ptotal Power dissipation 2, 8, 9 CL = 50pF 2.0 mW/MHz IDDQ Quiescent Supply Current VDD = 5.5V 10 A Quiescent Supply Current Delta For input under test 1.6 mA VOL VOH IOL IOH IDDQ ACTS -1 1 A 0.40 0.25 V .7VDD VDD - 0.25 V VIN = VDD - 2.1V For all other inputs VIN = VDD or VSS VDD = 5.5V CIN COUT Input capacitance 5 = 1MHz @ 0V 15 pF Output capacitance 5 = 1MHz @ 0V 15 pF RadHard MSI Logic 168 UT54ACS245/UT54ACTS245 Notes: 1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = VIH (min) + 20%, - 0%; VIL = VIL(max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to VIH(min) and VIL(max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF/MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at frequency of 1MHz and a signal amplitude of 50mV rms maximum. 6. Maximum allowable relative shift equals 50mV. 7. All specifications valid for radiation dose 1E6 rads(Si). 8. Power does not include power contribution of any TTL output sink current. 9. Power dissipation specified per switching output. 10. This value is guaranteed based on characterization data, but not tested. 169 RadHard MSI Logic UT54ACS245/UT54ACTS245 AC ELECTRICAL CHARACTERISTICS 2 (VDD = 5.0V 10%; V SS = 0V 1, -55 C < TC < +125 C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT tPLH Data to bus 1 11 ns tPHL Data to bus 1 15 ns tPZL G low to bus active 2 12 ns tPZH G low to bus active 2 12 ns tPLZ G high to bus three-state 2 12 ns tPHZ G high to bus three-state 2 12 ns Notes: 1. Maximum allowable relative shift equals 50mV. 2. All specifications valid for radiation dose 1E6 rads(Si) RadHard MSI Logic 170