UT54ACS365/UT54ACTS365 Radiation-Hardened Hex Buffers/Line Drivers with Three-State Outputs FEATURES PINOUTS 16-Pin DIP Top View radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QML Q or V processes Flexible package - 16-pin DIP - 16-lead flatpack DESCRIPTION The UT54ACS365 and UT54ACTS365 are non-inverting hex buffer and line driver with three-state outputs. The output enables (OE1 and OE2) control the three-state outputs. If OE1 or OE2 is high, the outputs will be in a high impedance state. For data, both OE1 and OE2 must be low. The devices are characterized over full military temperature range of -55 C to +125 C. FUNCTION TABLE INPUTS OE1 OE2 A OE1 1 16 VDD A1 2 15 OE2 Y1 3 14 A6 A2 4 13 Y6 Y2 5 12 A5 A3 Y3 6 11 7 10 Y5 A4 VSS 8 9 Y4 16-Lead Flatpack Top View OE1 1 16 VDD A1 2 15 OE2 Y1 3 14 A6 A2 Y2 4 5 13 12 Y6 OUTPUT Y A3 6 11 Y5 Y3 VSS 7 8 10 9 A4 Y4 L L L L L L H H X H X Z H X X Z A5 LOGIC SYMBOL OE1 OE2 A1 A2 A3 A4 A5 A6 (1) (15) & EN (2) (3) (4) (5) (6) (7) (10) (9) (12) (11) (14) (13) Y1 Y2 Y3 Y4 Y5 Y6 Note: 1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. 211 RadHard MSI Logic UT54ACS365/UT54ACTS365 LOGIC DIAGRAM OE2 (15) A6 A5 A4 A3 A2 (12) (10) (6) (4) (2) (13) (11) (9) (7) (5) (3) Y5 Y4 Y3 RADIATION HARDNESS SPECIFICATIONS 1 PARAMETER (1) A1 (14) Y6 OE1 Y2 Y1 LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU Threshold 2 80 MeV-cm2/mg SEL Threshold 120 MeV-cm2/mg Neutron Fluence 1.0E14 n/cm2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.3 to 7.0 V VI/O Voltage any pin -.3 to VDD +.3 V TSTG Storage Temperature range -65 to +150 C TJ Maximum junction temperature +175 C TLS Lead temperature (soldering 5 seconds) +300 C Thermal resistance junction to case 20 C/W II DC input current 10 mA PD Maximum power dissipation 1 W JC Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RadHard MSI Logic 212 UT54ACS365/UT54ACTS365 RECOMMENDED OPERATING CONDITIONS 213 SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage 4.5 to 5.5 V VIN Input voltage any pin 0 to VDD V TC Temperature range -55 to + 125 C RadHard MSI Logic UT54ACS365/UT54ACTS365 DC ELECTRICAL CHARACTERISTICS 7 (VDD = 5.0V 10%; V SS = 0V 6, -55 C < TC < +125 C) SYMBOL VIL VIH IIN PARAMETER CONDITION MIN Low-level input voltage 1 ACTS ACS High-level input voltage 1 ACTS ACS MAX UNIT 0.8 .3VDD V .5VDD .7VDD V Input leakage current ACTS/ACS VIN = VDD or VSS Low-level output voltage 3 ACTS ACS IOL = 12.0mA IOL = 100 A High-level output voltage 3 ACTS ACS IOH = -12.0mA IOH = -100 A IOZ Three-state output leakage current VO = VDD and VSS -30 30 A IOS Short-circuit output current 2 ,4 ACTS/ACS VO = VDD and VSS -300 300 mA Output current10 VIN = VDD or VSS 12 mA (Sink) VOL = 0.4V Output current10 VIN = VDD or VSS -12 mA (Source) VOH = VDD - 0.4V Ptotal Power dissipation 2, 8, 9 CL = 50pF 1.8 mW/ MHz IDDQ Quiescent Supply Current VDD = 5.5V 10 A Quiescent Supply Current Delta For input under test 1.6 mA VOL VOH IOL IOH IDDQ ACTS -1 1 A 0.40 0.25 V .7VDD VDD - 0.25 V VIN = VDD - 2.1V For all other inputs VIN = VDD or VSS VDD = 5.5V CIN COUT Input capacitance 5 = 1MHz @ 0V 15 pF Output capacitance 5 = 1MHz @ 0V 15 pF RadHard MSI Logic 214 UT54ACS365/UT54ACTS365 Notes: 1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = VIH (min) + 20%, - 0%; VIL = VIL(max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to VIH(min) and VIL(max). 2. Supplied as a design limit but not guaranteed or tested. 3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF/MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at frequency of 1MHz and a signal amplitude of 50mV rms maximum. 6. Maximum allowable relative shift equals 50mV. 7. All specifications valid for radiation dose 1E6 rads(Si). 8. Power does not include power contribution of any TTL output sink current. 9. Power dissipation specified per switching output. 10. This value is guaranteed based on characterization data, but not tested. 215 RadHard MSI Logic UT54ACS365/UT54ACTS365 AC ELECTRICAL CHARACTERISTICS 2 (VDD = 5.0V 10%; V SS = 0V 1, -55 C < TC < +125 C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT tPLH Data to output 2 11 ns tPHL Data to output 2 13 ns tPZL OE low to output active 2 14 ns tPZH OE low to output active 2 15 ns tPLZ OE high to output three-state 2 12 ns tPHZ OE high to output three-state 2 14 ns Notes: 1. Maximum allowable relative shift equals 50mV. 2. All specifications valid for radiation dose 1E6 rads(Si). RadHard MSI Logic 216