UTC-IC UT6302G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD
UT6302
Power MOSFET
P-CHANNEL
ENHANCEMENT MOSFET
„
DESCRIPTION
The UTC UT6302 is a power MOSFET offering the customers
efficient and reliable performance.
The UTC UT6302 is ideal for thin application environments, such
as portable electronics and PCMCIA cards.
„
FEATURES
* Extremely-Low On-Resistance
* Fast Switching Speed
„
SYMBOL
Drain (3)
Gate (2)
Source (1)
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT6302L-AE2-R
UT6302G-AE2-R
UT6302L-AE3-R
UT6302G-AE3-R
„
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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UT6302
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (VGS=-4.5V, Ta=25°C)
ID
-0.78
A
Pulsed Drain Current (Note 2)
IDM
-4.9
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
-5.0
V/nS
Power Dissipation (TA=25°C)
540
mW
PD
Linear Derating Factor above 25°C
4.3
mW /°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. ISD≤-0.61A, di/dt≤76A/µs, VDD≤V(BR)DSS, TJ=150°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Note: Surface Mounted on FR-4 Board, t ≤ 5sec.
„
SYMBOL
θJA
RATINGS
230
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Drain-Source Breakdown Voltage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
SYMBOL
BVDSS
IDSS
IGSS
△BVDSS/△TJ
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VGS=0 V, ID=-250 µA
VDS=-16V,VGS=0V
VGS=±12 V, VDS=0 V
ID=-1mA, Reference to 25°C
VDS =VGS, ID=-250µA
VGS=-4.5V, ID=-0.61A (Note 2)
VGS=-2.7V, ID=-0.31A (Note 2)
VDS=-15V, VGS=0V, f=1.0MHz
VGS=-4.5V, VDS=-16V
ID=-0.61A (Note 1, 2)
VDD=-10V, ID=-0.61A,
RG=6.2Ω, RD=16Ω (Note 1, 2)
MIN
TYP
MAX
UNIT
-1.0
±100
V
µA
nA
mV/°C
-1.5
0.60
0.90
V
Ω
Ω
-20
-4.9
-0.70
97
53
28
2.4
0.56
1.0
13
18
22
22
pF
pF
pF
3.6
0.84
1.5
nC
nC
nC
nS
nS
nS
nS
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Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-0.61A, VGS=0V
Maximum Continuous Drain-Source
IS
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current (Note 1)
Reverse Recovery Time
trr
TJ=25°C ,IF=-0.61A,
di/dt=100A/µs (Note 2)
Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating; Pulse width limited by TJ(MAX)
2. Pulse Width ≤300μs, Duty Cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
35
26
MAX
UNIT
-1.2
V
-0.54
A
-4.9
A
53
39
nS
nC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
(3)
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
(2)
-
-
(4)
+
(Note 2)
(1)
RG
dv/dt controlled by RG
ISD controlled by Duty Factor “D”
D.U.T. – Device Under Test
VGS
(Note 1)
+
-
VDD (Note 1)
Peak Diode Recovery dv/dt Test Circuit
(1) Driver Gate Drive
Period
P.W.
D=
P.W.
Period
VGS=10V
(Note 3)
(2) D.U.T. ISD Waveform
Reverse
Recovery
Body Diode Forward Current
Current
di/dt
(3) D.U.T. VDS Waveform
Body Recovery
dv/dt
Re-Applied
Voltage
(4) Inductor Current
VDD
Body Diode Forward Drop
Ripple≤5
ISD
Peak Diode Recovery dv/dt Waveforms
Notes:
1.
2.
3.
Reverse Polarity for P-Channel
Use P-Channel Driver for P-Channel Measurements
VGS=5.0V for Logic Level and 3V Drive Devices
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Current Regulator
Same Type as D.U.T.
50kΩ
12V
0.3µF
0.2µF
QG
-4.5V
D.U.T.
V
+ DS
QGS
QGD
VG
VGS
-3mA
IG
ID
Current Sampling Resistors
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
VDS
90%
10%
VGS
td(ON)
Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
Switching Time Waveforms
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TYPICAL CHARACTERISTICS
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
200
200
150
150
100
100
50
50
0
0
0
0
10
30
40
50
20
Drain-Source Breakdown Voltage, -BVDSS(V)
200 400 600 800 1000 1200
Gate Threshold Voltage, -VTH (V)
Drain Current, -ID (mA)
Drain Current, -ID (mA)
„
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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