New Product V10P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low VF = 0.34 V at IF = 5 A FEATURES TMBS® eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-277A (SMPC) K Anode 1 Cathode Anode 2 • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 45 V IFSM 180 A VF at IF = 10 A 0.41 V TOP max. 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code V10P45S UNIT 1045S VRRM 45 IF (1) 10 IF (2) 4.4 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 180 A Junction temperature in DC forward current without reverse bias, t 1 h TJ (3) 200 °C Operating junction temperature range TOP - 40 to + 150 °C Storage temperature range TSTG - 40 to + 175 °C Maximum repetitive peak reverse voltage Maximum DC forward current V A Notes (1) Mounted on 30 mm x 30 mm aluminum PCB (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Document Number: 89341 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V10P45S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A TA = 25 °C IF = 10 A Instantaneous forward voltage VF (1) IF = 5.0 A TA = 25 °C VR = 45 V TA = 125 °C TYP. MAX. UNIT 0.42 - 0.48 0.57 0.34 - 0.41 0.50 21 800 μA 9 35 mA V TA = 125 °C IF = 10 A Reverse current SYMBOL IR (2) Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance V10P45S RJA (1) 75 RJM (2) 4 UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (2) Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V10P45S-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel V10P45S-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Notes Mounted on 30 mm x 30 mm aluminum PCB; TM measured at the terminal of cathode band (RJM = 4 °C/W) (2) Free air, mounted on recommended copper pad area (RJA = 75 °C/W) (1) 12 DC Forward Current (A) TM = 126 °C (1) 10 8 6 TA = 25 °C (2) 4 2 0 0 25 50 75 100 125 150 TM - Mount Temperature (°C) Fig. 1 - Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89341 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V10P45S Vishay General Semiconductor 10 000 7 Average Power Loss (W) 6 Junction Capacitance (pF) D = 0.5 D = 0.8 D = 0.3 D = 0.2 5 D = 1.0 D = 0.1 4 3 T 2 1 D = tp/T 2 6 4 8 100 0.1 12 10 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 1000 tp 0 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0.1 0 0.2 0.3 0.5 0.4 0.6 0.7 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Instantaneous Reverse Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Document Number: 89341 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V10P45S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89341 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. 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