24N50
W
WFW
WFW24N50
24N50W
annel MOS
FET
Sil
iliicon N-Ch
Cha
OSF
Features
■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 90nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
24
A
Continuous Drain Current(@Tc=100℃)
15.2
A
96
A
±30
V
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
1100
mJ
EAR
Repetitive Avalanche Energy
(Note1)
29
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
Total Power Dissipation(@Tc=25℃)
290
W
Derating Factor above 25℃
2.33
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
(Note1)
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.43
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.24
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
40
℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
24N50
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WFW24N50
24N50W
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±25V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=500V,VGS=0V
-
-
1
µA
Drain cut -off current
IDSS
VDS=400V,Tc=125℃
Drain -source breakdown voltage
V(BR)DSS
ID=10 mA,VGS=0V
Breakdown voltage Temperature
△BVDSS/
ID=250µA,Referenced
△TJ
coefficient
to 25℃
10
500
-
-
V
-
0.53
-
V/℃
3.0
-
5.0
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=9A
-
0.16
0.19
Ω
Forward Transconductance
gfs
VDS=40V,ID=9A
-
22
-
S
Input capacitance
Ciss
VDS=25V,
-
3500
4500
Reverse transfer capacitance
Crss
VGS=0V,
-
55
70
Output capacitance
Coss
f=1MHz
-
520
670
VDD=250V,
-
250
500
ton
ID=18A
-
80
170
tf
RG=25Ω
-
155
320
-
200
400
-
90
120
-
23
-
-
44
-
Rise time
tr
Turn-on time
Switching time
Fall time
Turn-off time
ns
(Note4,5)
toff
Total gate charge(gate-source
Qg
plus gate-drain)
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
pF
VDD=400V,
VGS=10V,
nC
ID=18A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
24
A
Pulse drain reverse current
IDRP
-
-
-
96
A
Forward voltage(diode)
VDSF
IDR=24A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=24A,VGS=0V,
-
400
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
4.3
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=3.4mH IAS=24A,VDD=50V,R G=25Ω,Starting TJ=25℃
3.ISD≤24A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
24N50
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WFW24N50
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ate Ch
arac
cs
Fig.1 On St
Sta
Cha
actteristi
tic
ent Ch
arac
cs
Fig.2 Transfer Curr
Curre
Cha
actteristi
tic
es
Fig.3 On-R
n-Res
esiistance Variation vs
ain Curr
ent and gate volt
age
Dr
Dra
Curre
olta
ward Vol
Fig.4 Body Diode For
Forw
olttage
ce Curr
ent and
Variation with Sour
Sourc
Curre
perature
Tem
emp
arac
stics
Fig.5 Capac
aciitance Ch
Cha
actteri
ris
arge Ch
arac
cs
Fig.6 Gate Ch
Cha
Cha
actteristi
tic
3/7
Steady, keep you advance
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Fig.7 Br
eak
down Vol
Break
eakd
olttage Variation
Fig.9 Max
Maxiimum Safe Operation Area
es
Fig.8 On-R
n-Res
esiistance Variation
perature
vs.Tem
emp
10 Max
ain Curr
ent vs
Fig.
Fig.1
Maxiimum Dr
Dra
Curre
e Tem
perature
Cas
ase
emp
erma
pon
se Cur
ve
Fig
Fig..11 Transient Th
The
mall Res
esp
ons
Curv
4/7
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12 Gate Tes
cuit & Waveform
Fig.
Fig.1
estt Cir
Circ
13 Res
ve Switching Tes
cuit & Waveform
Fig.
Fig.1
esiisti
tiv
estt Cir
Circ
14
Fig.
Fig.1
clam
ped
Un
Unc
amp
cti
ve
Indu
Induc
tiv
Switching
Tes
estt
cuit
Cir
Circ
&
5/7
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24N50
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15 Pea
k Diode Rec
overy dv/dt Tes
cuit & Waveform
Fig.
Fig.1
eak
eco
estt Cir
Circ
6/7
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24N50
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24N50W
47 Packa
ge Dim
ension
TO-2
-24
ckag
Dime
Unit:mm
7/7
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