X02 Series ® 1.25A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT(RMS) 1.25 A VDRM/VRRM 600 and 800 V IGT 50 to 200 µA G K DESCRIPTION Thanks to highly sensitive triggering levels, the X02 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ... Available in though-hole or surface-mount packages, these devices are optimized in forward voltage drop and inrush current capabilities, for reduced power losses and high reliability in harsh environments. TO-92 (X02xxA) SOT-223 (X02xxN) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) TO-92 TI = 55°C SOT-223 Ttab = 95°C TO-92 TI = 55°C SOT-223 Ttab = 95°C Value Unit 1.25 A 0.8 A Non repetitive surge peak on-state current tp = 8.3 ms I²t Value for fusing tp = 10 ms Tj = 25°C 2.5 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 1.2 A Tj = 125°C 0.2 W - 40 to + 150 - 40 to + 125 °C ITSM I ²t PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range September 2000 - Ed: 3 Tj = 25°C tp = 10 ms 25 A 22.5 1/6 X02 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) X02xx Symbol Test Conditions Unit IGT VD = 12 V RL = 140 Ω VGT 02 05 MIN. - 20 MAX. 200 50 µA MAX. 0.8 V MIN. 0.1 V VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ VRG IRG = 10 µA MIN. 8 V IH IT = 50 mA RGK = 1 kΩ MAX. 5 mA IL IG = 1 mA RGK = 1 kΩ MAX. 6 mA Tj = 125°C dV/dt VD = 67 % VDRM RGK = 1 kΩ Tj = 110°C MIN. VTM ITM = 2.5 A Tj = 25°C MAX. 1.45 V Vto Threshold voltage Tj = 125°C MAX. 0.9 V Rd Dynamic resistance Tj = 125°C MAX. 200 mΩ Tj = 25°C MAX. 5 IDRM IRRM tp = 380 µs VDRM = VRRM RGK = 1 kΩ 10 Tj = 125°C 15 V/µs µA 500 THERMAL RESISTANCES Symbol Parameter Rth(j-l) Junction to leads (DC) Rth(j-t) Junction to tab (DC) Rth(j-a) Junction to ambient (DC) TO-92 S = 5 cm² Value Unit 60 °C/W SOT-223 25 TO-92 150 SOT-223 60 S = Copper surface under tab PRODUCT SELECTOR Voltage Part Number 600 V Sensitivity Package 800 V X0202MA X 200 µA TO-92 X0202MN X 200 µA SOT-223 X0202NA X 200 µA TO-92 X0202NN X 200 µA SOT-223 X0205MA X 50 µA TO-92 X0205MN X 50 µA SOT-223 X0205NA X 50 µA TO-92 X0205NN X 50 µA SOT-223 2/6 X02 Series ORDERING INFORMATION SENSITIVE SCR SERIES X 02 02 M A Blank VOLTAGE: M: 600V N: 800V SENSITIVITY: 02: 200µA 05: 50µA CURRENT: 1.25A 1BA2 PACKING MODE: 1BA2: TO-92 Bulk 2BL2: TO-92 Ammopack 5BA4: SOT-223 Tape & Reel PACKAGE: A: TO-92 N: SOT-223 OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode X02xxyA 1BA2 X02xxyA 0.2 g 2500 Bulk X02xxyA 2BL2 X02xxyA 0.2 g 2000 Ammopack X0202yN 5BA4 X2y 0.12 g 1000 Tape & reel X0205yN 5BA4 X5y 0.12 g 1000 Tape & reel Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. 1.2 P(W) Fig. 2-1: Average and D.C. on-state current versus lead temperature (SOT-223/TO-92). 1.4 IT(av)(A) SOT-223 1.2 1.0 TO-92 1.0 0.8 SOT-223 0.8 0.6 0.6 TO-92 0.4 0.4 0.2 0.2 IT(av)(A) 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Tlead or Tlab(°C) 0 25 50 75 100 125 3/6 X02 Series Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (SOT-223/ TO-92). K = [Zth(j-a)/Rth(j-a)] IT(av)(A) 1.4 1.2 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration (SOT-223/TO-92). 1.00 SOT-223 TO-92 1.0 SOT-223 0.8 0.4 TO-92 0.2 0.0 SOT-223 0.10 TO-92 0.6 Tamb(°C) 0 25 75 50 100 125 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C] 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). 4.0 1.50 tp(s) 0.01 1E-2 IH[Rgk] / IH[Rgk = 1 kΩ] Tj = 25°C 3.5 1.25 3.0 1.00 2.5 Ω 0.75 2.0 1.5 0.50 1.0 0.25 Tj(°C) 0.00 -40 -20 0 20 40 0.5 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). 10.0 Tj = 125°C VD = 0.67xVDRM 1.0 4/6 Rgk(kΩ) 0.2 0.4 0.6 0.8 1.0 1E-1 1E+0 1E+1 Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Cgk] / dV/dt[Rgk = 1kΩ] dV/dt[Rgk]/dV/dt [Rgk=1kΩ] 0.1 0.0 Rgk(kΩ) 0.0 1E-2 1.2 1.4 1.6 1.8 2.0 20 18 16 14 12 10 8 6 4 2 0 Cgk(nF) 0 2 4 6 8 10 12 14 16 18 20 22 X02 Series Fig. 8: Surge peak on-state current versus number of cycles. 25 Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A), I2t(A2S) ITSM(A) 300 20 100 tp=10ms Onecycle Nonrepetitive Tjinitial=25°C 15 Number of cycles 10 10 Repetitive Tamb=25°C 5 tp(ms) 0 1 10 100 1 0.01 1000 Fig. 10: On-state characteristics (maximum values). 3E+1 Rth(j-a) (°C/W) 130 120 110 100 90 80 70 60 50 40 30 20 S(cm2) 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1E+1 1E+0 VTM(V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.00 10.00 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SOT-223). ITM(A) 1E-1 0.5 0.10 4.5 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS REF. A Min. a B C F D E Millimeters A B C D E F a Typ. Max. Inches Min. 1.35 Typ. Max. 0.053 4.70 0.185 2.54 0.100 4.40 12.70 0.173 0.500 3.70 0.50 0.146 0.019 5/6 X02 Series PACKAGE MECHANICAL DATA SOT-223 (Plastic) DIMENSIONS c A REF. V A1 Millimeters Min. Typ. Max. Inches Min. Typ. Max. B A A1 B B1 c D e e1 E H V e1 D B1 H E e 0.02 0.60 2.90 0.24 6.30 3.30 6.70 0.70 3.00 0.26 6.50 2.3 4.6 3.50 7.00 1.80 0.071 0.1 0.0008 0.004 0.85 0.024 0.027 0.034 3.15 0.114 0.118 0.124 0.35 0.009 0.010 0.014 6.70 0.248 0.256 0.264 0.090 0.181 3.70 0.130 0.138 0.146 7.30 0.264 0.276 0.287 10° max FOOTPRINT DIMENSIONS (in millimeters) SOT-223 (Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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