BTW67 and BTW69 Series 50A SCRs STANDARD MAIN FEATURES: Symbol Value Unit IT(RMS) 50 A V DRM/VRRM 600 to 1200 V IGT 80 mA DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (file ref: E81734). RD91 (BTW67) TOP3 (BTW69) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current RD91 Tc = 70°C TOP3 Ins. Tc = 75°C RD91 Tc = 70°C TOP3 Ins. Tc = 75°C tp = 8.3 ms Unit 50 A 32 A 610 Tj = 25°C tp = 10 ms I ²t Value I²t Value for fusing A 580 Tj = 25°C 1680 A2 S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 8 A Tj = 125°C 1 W PG(AV) Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V April 2001 - Ed: 4 1/5 BTW67 and BTW69 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Value IGT RL = 33 Ω VD = 12 V VGT VGD Tj = 125°C VD = VDRM RL = 3.3 kΩ IH IT = 500 mA IL IG = 1.2 I GT Gate open Unit MIN. 8 MAX. 80 MAX. 1.3 V MIN. 0.2 V MAX. 150 mA MAX. 200 mA mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM = 100 A Tj = 25°C MAX. 1.9 V Vt0 Threshold voltage Tj = 125°C MAX. 1.0 V Rd Dynamic resistance Tj = 125°C MAX. 8.5 mΩ Tj = 25°C MAX. 10 µA 5 mA IDRM IRRM tp = 380 µs VDRM = VRRM Tj = 125°C THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient Value Unit RD91 (Insulated) 1.0 °C/W TOP3 Insulated 0.9 TOP3 Insulated 50 Sensitivity Package °C/W PRODUCT SELECTOR Voltage (xxx) Part Number 600 V 800 V 1200 V BTW67-xxx X X X 80 mA RD91 BTW69-xxx X X X 80 mA TOP3 Ins. ORDERING INFORMATION OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode BTW67-xxx BTW67xxx 20.0 g 25 Bulk BTW69-xxx BTW69xxx 4.5 g 120 Bulk Note: xxx = voltage 2/5 BTW67 and BTW69 Series Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and D.C. on-state current versus case temperature. Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 3/5 BTW67 and BTW69 Series Fig. 7: values). On-state characteristics (maximum PACKAGE MECHANICAL DATA RD91 (Plastic) DIMENSIONS REF. Millimeters Min. A A1 A2 B B1 B2 C C1 C2 E3 F I L1 L2 N1 N2 4/5 29.90 13.50 1.95 0.70 4.00 11.20 3.10 1.70 33° 28° Max. 40.00 30.30 22.00 27.00 16.50 24.00 14.00 3.50 3.00 0.90 4.50 13.60 3.50 1.90 43° 38° Inches Min. 1.177 0.531 0.077 0.027 0.157 0.441 0.122 0.067 33° 28° Max. 1.575 1.193 0.867 1.063 0.650 0.945 0.551 0.138 0.118 0.035 0.177 0.535 0.138 0.075 43° 38° BTW67 and BTW69 Series PACKAGE MECHANICAL DATA TOP3 Ins.(Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved . STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia-Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5