INTERSIL X60008EIS8-50

X60008E-50
®
Data Sheet
March 14, 2005
Precision 5.0V FGA™ Voltage Reference
FEATURES
• Output Voltage: 5.000V
• Absolute Initial Accuracy = ±5mV
• Ultra Low Power Supply Current: 500nA
• Low Temperature Coefficient = 20ppm/°C max
• 10 mA Source & Sink Current Capability
• 10 ppm/1000hrs Long Term Stability
• Very Low Dropout Voltage: 100 mV @ no load
• Supply Voltage Range: 5.1V to 9.0V
• 5kV ESD (Human Body Model)
• Standard Package: SOIC-8
• Temp Range: -40°C to +85°C
FN8145.0
DESCRIPTION
The X60008-50 FGA™ voltage references are very
high precision analog voltage references fabricated in
Intersil’s proprietary Floating Gate Analog technology,
which achieves superior levels of performance when
compared to conventional band gap, buried zener, or
XFET™ technologies.
FGA™ voltage references feature very high initial
accuracy, very low temperature coefficient, excellent
long term stability, low noise and excellent line and
load regulation, at the lowest power consumption
currently available. These voltage references enable
advanced applications for precision industrial &
portable systems operating at significantly higher
accuracy and lower power levels than can be achieved
with conventional technologies.
APPLICATIONS
• High Resolution A/Ds & D/As
• Precision Current Sources
• Smart sensors
• Digital Meters
• Precision Regulators
• Strain Gage Bridges
• Calibration Systems
• Precision Oscillators
• Threshold Detectors
• V-F Converters
• Battery Management Systems
• Servo Systems
TYPICAL APPLICATION
VIN = +6.5V
0.1µF
10µF
VIN
VOUT
X60008-50
0.001µF(*)
GND
REF IN
Serial
Bus
Enable
SCK
SDAT
16 to 24-bit
A/D Converter
(*)Also
1
see Figure 3 in Applications Information
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
X60008E-50
PACKAGE DIAGRAM
X60008-XX
SOIC
GND
1
8
DNC
VIN
2
7
DNC
DNC
3
6
VOUT
GND
4
5
DNC
PIN CONFIGURATIONS
Pin Name
GND
VIN
Description
Ground Connection
Power Supply Input Connection
VOUT
Voltage Reference Output Connection
DNC
Do Not Connect; Internal Connection – Must Be Left Floating
ORDERING INFORMATION
X 60008 E I S8 – 50
Logo
2
Device Part Number
60008 = Standard
Grade
E = ±5.0mV, 20 ppm/°C
Temperature Range
I = -40°C to +85°C
Package
S8 = 8 lead SOIC
VOUT Option
50 = 5.000V
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March 14, 2005
X60008E-50
ABSOLUTE MAXIMUM RATINGS
COMMENT
Storage Temperature Range............ -65°C to + 125°C
Voltage on any Pin
Referenced to Gnd.............................-0.5V to + 10V
Voltage on “DNC” pins.........No connections permitted
to these pins.
Lead Temperature (soldering, 10 secs).......... + 225°C
Absolute Maximum Ratings indicate limits beyond
which permanent damage to the device and impaired
reliability may occur. These are stress ratings provided
for information only and functional operation of the
device at these or any other conditions beyond those
indicated in the operational sections of this specification are not implied.
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
Max.
Industrial
-40°C
+85°C
For guaranteed specifications and test conditions, see
Electrical Characteristics.
The guaranteed specifications apply only for the test
conditions listed. Some performance characteristics
may degrade when the device is not operated under
the listed test conditions.
ELECTRICAL CHARACTERISTICS
(Operating Conditions: VIN = 6.5V, IOUT = 0mA, COUT = 0.001µF, TA = -40 to +85°C unless otherwise specified.)
Symbol
Parameter
VOUT
Output Voltage
VOA
VOUT Accuracy
X60008EIS8-50
Conditions
Min
Typ
Max
5.000
Units
V
TA = 25°C
mV
-5.0
+5.0
IIN
Supply Current
VIN
Input Voltage Range
TC VOUT
Output Voltage
Temperature Coefficient(1)
X60008EIS8-50
∆VOUT/∆VIN
Line Regulation
+5.5V ≤ VIN ≤ +8.0V
∆VOUT/∆IOUT
Load Regulation
0mA ≤ ISOURCE ≤ 10mA
-10mA ≤ ISINK ≤ 0mA
15
25
∆VOUT/∆t
Long Term Stability
TA = 25°C
10
∆VOUT/∆TA
Thermal Hysteresis(2)
∆T = -40°C to +85°C
50
VDO
Dropout Voltage(3)
IOUT = 5mA, ∆VOUT = 0.01%
150
300
mV
ISC
Short Circuit Current(4)
TA = 25°C
50
80
mA
VN
Output Voltage Noise
0.1Hz to 10Hz
30
Note:
500
5.1
10
800
nA
9.0
V
20
ppm/°C
150
µV/V
50
100
µV/mA
ppm/
1000Hrs
ppm
µVpp
1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided
by the temperature range; in this case, -40°C to +85°C = 125°C.
2. Thermal Hysteresis is the change in VOUT created by package stress @ TA = 25°C after temperature cycling. VOUT is read initially at TA
= 25°C; the X60008 is then cycled between Hot (85°C) and Cold (-40°C) before a second VOUT measurement is taken at 25°C. The
deviation between the initial VOUT reading and the second VOUT reading is then expressed in ppm.
3. Dropout voltage (VDO) is the minimum voltage (VIN) into the X60008 which will produce the output voltage (∆VOUT) drop specified in the
Electrical Characteristics table.
4. Guaranteed by Device Characterization
3
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TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified)
LINE REGULATION
LINE REGULATION
VOUT (V)
(normalized to 5V at VIN = 6.5V)
300
-40°C
250
25°C
200
150
100
85°C
50
0
5
6
7
8
9
5 Typical Units
5.0003
5.0002
5.0001
5.0000
4.9999
4.9998
4.9997
5
6
Vin (V)
7
8
9
Vin (V)
LOAD REGULATION
0.6
0.5
Delta VOUT (mV)
-50
5.0004
-40°C
0.4
0.3
25°C
85°C
0.2
0.1
0
-0.1
-0.2
-0.3
-20
-15
-10
-5
0
SINKING
5
10
15
20
SOURCING
OUTPUT CURRENT (mA)
0.1Hz to 10Hz VOUT NOISE
Band Pass Filter with 1 zero at .1Hz and 2 poles at 10 Hz
5µV/div
Delta Vo (µV)
(normalized to VIN = 6.5V)
350
10 Sec/div
4
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TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified)
VOUT vs TEMPERATURE
PSRR vs CAP LOAD
Normalized to 25°C
5.0020
0
5.0010
-20
PSRR (dB)
-10
5.0005
5.0000
4.9995
CL=.001µF
CL=.01µF
-40
-50
CL=.1µF
-60
4.9985
-70
4.9980
CL=0
-30
4.9990
-40C
-15C
10C
+35C
+60C
+85C
-80
1 Hz 10 Hz 100Hz
1kHz 10kHz 100kHz 1 MHz
FREQUENCY (Hz)
TEMPERATURE (C)
10mA LOAD TRANSIENT RESPONSE
10mA LOAD TRANSIENT RESPONSE
CL = .01µF
∆IIN = -10mA
∆IIN = +10mA
200mV/DIV
CL = .001µF
∆IIN = -10mA
∆IIN = +10mA
500µSEC/DIV
500µSEC/DIV
10mA LOAD TRANSIENT RESPONSE
CL = .1µF
200mV/DIV
200mV/DIV
VOUT (V)
4 Typical Units
5.0015
∆IIN = -10mA
∆IIN = +10mA
500µSEC/DIV
5
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TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified)
50µA LOAD TRANSIENT RESPONSE
50µA LOAD TRANSIENT RESPONSE
50mV/DIV
CL = .01µF
∆IIN = -50µA
∆IIN = +50µA
∆IIN = -50µA
100µSEC/DIV
∆IIN = +50µA
200µSEC/DIV
50µA LOAD TRANSIENT RESPONSE
CL = .1µF
∆IIN = -50µA
20mV/DIV
50mV/DIV
CL = .001µF
∆IIN = +50µA
1mSEC/DIV
6
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X60008E-50
TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified)
LINE TRANSIENT RESPONSE
LINE TRANSIENT RESPONSE
200mV/DIV
CL = .001µF
200mV/DIV
CL = 0
∆VIN = -500mV
∆VIN = +500mV
∆VIN = -500mV
500µSEC/DIV
500µSEC/DIV
LINE TRANSIENT RESPONSE
LINE TRANSIENT RESPONSE
CL = .1µF
200mV/DIV
200mV/DIV
CL = .01µF
∆VIN = -500mV
∆VIN = -500mV
∆VIN = +500mV
∆VIN = +500mV
500µSEC/DIV
500µSEC/DIV
MINIMUM VIN to VOUT DIFFERENTIAL
vs. OUTPUT CURRENT
Zout vs FREQUENCY
0.50
500.0
0.45
CL=.001µF
+85C
0.40
400.0
0.35
+25C
0.30
0.25
-40C
0.20
0.15
Zout (Ohms)
VIN to VOUT Differential (V)
∆VIN = +500mV
CL=.01µF
300.0
200.0
CL=.1µF
0.10
100.0
0.05
0
0
-2
-4
-6
-8
OUTPUT CURRENT (mA)
7
-10
0.0
1
10
100
1K
10K
100K
FREQUENCY (Hz)
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March 14, 2005
X60008E-50
TYPICAL PERFORMANCE CHARACTERISTIC CURVES
(VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified)
IIN vs VIN
IIN vs VIN
900
700
800
-40°C
600
+25°C
500
+85°C
700
IIN (nA)
500
400
400
300
300
200
5 units representative of IIN range
200
100
100
0
5.5
6
6.5
7
7.5
8
8.5
0
9
5.5
6
6.5
VIN (V)
7
7.5
8
8.5
9
VIN (V)
TURN-ON TIME
7
VIN
6
VIN & VOUT (V)
IIN (nA)
600
5
4
VOUT
3
2
1
0
0
2
4
6
8
10
TIME (mSec)
8
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March 14, 2005
X60008E-50
APPLICATIONS INFORMATION
FGA Technology
The X60008 series of voltage references use the floating gate technology to create references with very low
drift and supply current. Essentially the charge stored
on a floating gate cell is set precisely in manufacturing.
The reference voltage output itself is a buffered version of the floating gate voltage. The resulting reference device has excellent characteristics which are
unique in the industry: very low temperature drift, high
initial accuracy, and almost zero supply current. Also,
the reference voltage itself is not limited by voltage
bandgaps or zener settings, so a wide range of reference voltages can be programmed (standard voltage
settings are provided, but customer-specific voltages
are available).
The process used for these reference devices is a
floating gate CMOS process, and the amplifier circuitry
uses CMOS transistors for amplifier and output transistor circuitry. While providing excellent accuracy,
there are limitations in output noise level and load regulation due to the MOS device characteristics. These
limitations are addressed with circuit techniques discussed in other sections.
Nanopower Operation
Reference devices achieve their highest accuracy
when powered up continuously, and after initial stabilization has taken place. For example, power-up drift on
a high accuracy reference can reach 20ppm or more
in the first 30 seconds, and generally will settle to a
stable value in 100 hours or so. This drift can be eliminated by leaving the power-on continuously.
The X60008 is the first high precision voltage reference
with ultra low power consumption that makes it possible
to leave power-on continuously in battery operated circuits. The X60008 consumes extremely low supply current due to the proprietary FGA technology. Supply
current at room temperature is typically 500nA which is
1 to 2 orders of magnitude lower than competitive
devices. Application circuits using battery power will
benefit greatly from having an accurate, stable reference which essentially presents no load to the battery.
In particular, battery powered data converter circuits
that would normally require the entire circuit to be disabled when not in use can remain powered up
between conversions as shown in figure 1. Data acquisition circuits providing 12 to 24 bits of accuracy can
operate with the reference device continuously biased
with no power penalty, providing the highest accuracy
and lowest possible long term drift.
9
Other reference devices consuming higher supply currents will need to be disabled in between conversions
to conserve battery capacity. Absolute accuracy will
suffer as the device is biased and requires time to settle to its final value, or, may not actually settle to a final
value as power-on time may be short.
Figure 1.
VIN = +6-9V
10µF
0.01µF
VIN
VOUT
X60008-50
GND
0.001µF-0.01µF
REF IN
Serial
Bus
Enable
SCK
SDAT
12 to 24-bit
A/D Converter
Board mounting Considerations
For applications requiring the highest accuracy, board
mounting location should be reviewed. Placing the
device in areas subject to slight twisting can cause
degradation of the accuracy of the reference voltage
due to die stresses. It is normally best to place the
device near the edge of a board, or the shortest side,
as the axis of bending is most limited at that location.
Obviously mounting the device on flexprint or
extremely thin PC material will likewise cause loss of
reference accuracy.
Noise Performance and Reduction:
The output noise voltage in a 0.1Hz to 10Hz bandwidth
is typically 30µVp-p. This is shown in the plot in the
Typical Performance Curves. The noise measurement
is made with a bandpass filter made of a 1 pole highpass filter with a corner frequency at .1Hz and a 2-pole
low-pass filter with a corner frequency at 12.6Hz to
create a filter with a 9.9Hz bandwidth. Noise in the
10KHz to 1MHz bandwidth is approximately 400µVp-p
with no capacitance on the output, as shown in Fig. 2
below. These noise measurements are made with a 2
decade bandpass filter made of a 1 pole high-pass filter
with a corner frequency at 1/10 of the center frequency
and 1-pole low-pass filter with a corner frequency at 10
times the center frequency. Figure 2 also shows the
noise in the 10KHz to 1MHz band can be reduced to
about 50µVp-p using a .001µF capacitor on the output.
Noise in the 1KHz to 100KHz band can be further
reduced using a 0.1µF capacitor on the output, but
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March 14, 2005
X60008E-50
Figure 2.
X60008-50 NOISE REDUCTION
NOISE VOLTAGE (µVp-p)
6
5
IIN = 730nA
4
IIN = 500nA
3
IIN = 320nA
2
0
-1
CL = 0
CL = .001µF
1
3
5
7
9
11
13
15
TIME (mSec)
CL = .1µF
300
X60008-50 TURN-ON TIME (25°C)
7
1
400
350
Figure 4.
VIN & VOUT (V)
noise in the 1Hz to 100Hz band increases due to
instability of the very low power amplifier with a 0.1µF
capacitance load. For load capacitances above
.001µF the noise reduction network shown in fig. 3 is
recommended. This network reduces noise significantly over the full bandwidth. As shown in fig. 2,
noise is reduced to less than 40µVp-p from 1Hz to
1MHz using this network with a .01µF capacitor and a
2kΩ resistor in series with a 10µF capacitor.
CL = .01µF & 10µF + 2kΩ
250
Temperature Coefficient
200
The limits stated for temperature coefficient (tempco)
are governed by the method of measurement. The
overwhelming standard for specifying the temperature
drift of a reference is to measure the reference voltage
at two temperatures, take the total variation, (VHIGH VLOW), and divide by the temperature extremes of
measurement (THIGH - TLOW). The result is divided by
the nominal reference voltage (at T = 25°C) and multiplied by 106 to yield ppm/°C. This is the “Box” method
for temperature coefficient which allows comparison of
devices but can mislead a designer concerned about
specific ranges of temperature (i.e., 35°C to 65°C for a
power supply design). The designer may infer the
tempco to be a well-behaved flat line slope, similar to
that shown in Figure 5. The slope of the Vout vs. temperature curve at points in-between the extremes can
actually be much higher than the tempco stated in the
specifications due to multiple inflections in the temperature drift curve. Most notably, bandgap devices may
have some type of “s-curve” which will have slopes
that exceed the average specified tempco by 2x or 3x.
150
100
50
0
1
10
100
1000
10000
100000
Figure 3.
VIN = 6.5V
10µF
.1µF
VIN
VO
X60008-50
GND
2kΩ
.01µF
10µF
Turn-On Time
The X60008 devices have ultra-low supply current and
thus the time to bias up internal circuitry to final values
will be longer than with higher power references. Normal turn-on time is typically 7ms. This is shown in the
graph, Figure 4. Since devices can vary in supply current down to 300nA, turn-on time can last up to about
12ms. Care should be taken in system design to
include this delay before measurements or conversions are started.
10
FN8145.0
March 14, 2005
X60008E-50
Figure 5. Flat Line Slope Tempco Curves
(Vout = 5V)
Temp-Co (Normalized to +25°C)
Change in VOUT (mV)
10.0
20ppm/°C
5.0
0.0
The tempco curve for the X60008 devices is generally
flat (within 0.5ppm/°C typically) over the industrial temperature range (-40 to 85°C) with some inflection at
the extreme temperatures. The combination of very
low tempco performance a predictable tempco slope is
unique to the X60008 due to its floating gate technology. This behavior is much easier to consider when
designing data conversion systems or control systems
that must operate over a range of temperatures.
-5.0
20ppm/°C
-10.0
-40°C
25°C
Temperature
11
85°C
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X60008E-50
TYPICAL APPLICATION CIRCUITS
Precision 5V, 50mA Reference.
VIN = 6V-9V
R = 200Ω
2N2905
VIN
X60008-50
VOUT
5.0V/50mA
0.009µF
GND
±5.0V Dual Output, High Accuracy Reference
+5.3-9.0V
0.1µF
VIN
X60008-50
VOUT
5.0V
0.001µF
GND
VIN
X60008-50
VOUT
R1 =
5.0V - VIN
; IOUT ≤ 10mA
IOUT
0.001µF
GND
R1
-VIN = -5.5V to -9.0V
-5.0V
Kelvin Sensed Load
+5.3-9.0V
0.1µF
VIN
VOUT
X60008-50
GND
12
+
VOUT Sense
–
Load
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March 14, 2005
X60008E-50
TYPICAL APPLICATION CIRCUITS
Negative Voltage Reference
X60008-50
R
VIN
VOUT
GND
CIN 0.001
COUT = 0.001µF
-5.0V
R1 = 200
R1 Limits max load current
with RI = 200Ω; ILOAD MAX = 4mA
-9V
5V Full Scale Low-Drift 10-bit Adjustable Voltage Source
5.3-9.0V
0.1µF
VIN
VOUT
X60008-50
GND
0.01µF
VCC RH
X9119
2-Wire Bus
13
+
SDA
SCL
VSS
VOUT
–
VOUT
(buffered)
RL
FN8145.0
March 14, 2005
X60008E-50
PACKAGING INFORMATION
8-Lead Plastic, SOIC, Package Code S8
0.150 (3.80)
0.158 (4.00)
0.228 (5.80)
0.244 (6.20)
Pin 1 Index
Pin 1
0.014 (0.35)
0.019 (0.49)
0.188 (4.78)
0.197 (5.00)
(4X) 7°
0.053 (1.35)
0.069 (1.75)
0.004 (0.19)
0.010 (0.25)
0.050 (1.27)
0.010 (0.25)
X 45°
0.020 (0.50)
0.050" Typical
0.050"
Typical
0° - 8°
0.0075 (0.19)
0.010 (0.25)
0.250"
0.016 (0.410)
0.037 (0.937)
FOOTPRINT
0.030"
Typical
8 Places
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
14
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