Composite Transistors XN6534 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 30 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 20 V VEBO 3 V IC 15 mA PT 200 mW Total power dissipation Overall Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 7F Internal Connection 6 Tr1 4 ■ Electrical Characteristics Parameter 1 2 5 *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SC2404 × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min Collector to base voltage VCBO IC = 10µA, IE = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 Forward current transfer ratio hFE VCB = 6V, IE = –1mA 40 Forward current transfer hFE ratio hFE (small/large)*1 VCB = 6V, IE = –1mA 0.5 Base to emitter voltage VBE VCB = 6V, IE = –1mA Common emitter reverse transfer capacitance Cre VCB = 6V, IE = –1mA, f = 10.7MHz Transition frequency fT VCB = 6V, IE = –1mA, f = 200MHz typ max 30 V V 260 0.99 720 0.8 450 Unit mV 1 pF 650 MHz Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB Ratio between 2 elements 1 Composite Transistors XN6534 PT — Ta IC — VCE 500 IC — I B 12 12 10 300 200 100 10 80µA 8 60µA 6 40µA 4 20µA 2 0 80 120 160 0 Ambient temperature Ta (˚C) 4 IC — VBE –25˚C 20 15 10 5 0 0 0.4 0.8 1.2 1.6 1 0.3 25˚C Ta=75˚C –25˚C 0.03 0.3 1 3 800 600 400 200 –30 Emitter current IE (mA) –100 Reverse transfer impedance Zrb (Ω) 1000 –10 10 30 300 240 25˚C –25˚C 120 60 0 0.1 100 Ta=75˚C 180 0.3 80 60 40 20 0 –0.1 –0.3 –1 3 10 30 100 Cre — VCE VCB=6V f=2MHz Ta=25˚C 100 1 Collector current IC (mA) Zrb — IE VCB=6V Ta=25˚C 160 VCE=6V Collector current IC (mA) 120 120 hFE — IC 3 0.1 80 360 IC/IB=10 fT — IE –3 40 Base current IB (µA) 10 0.01 0.1 2.0 1200 –1 0 30 Base to emitter voltage VBE (V) 0 –0.1 –0.3 0 16 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 25˚C Ta=75˚C 4 VCE(sat) — IC VCE=6V Transition frequency fT (MHz) 12 100 25 6 Collector to emitter voltage VCE (V) 30 Collector current IC (mA) 8 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 40 8 2 0 0 2 VCE=6V Ta=25˚C Collector current IC (mA) 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C IB=100µA 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 Collector to emitter voltage VCE (V) 100