Composite Transistors XP1504 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.425 0.65 1 2 5 3 4 +0.05 0.9± 0.1 2SD1938 × 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 0.12 – 0.02 0.2 ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 ● 0.425 Features 0.65 ■ 1.25±0.1 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 20 V VEBO 25 V IC 300 mA ICP 500 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C ■ Electrical Characteristics Parameter *1 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 5S Peak collector current Storage temperature 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 0.2±0.1 Internal Connection 1 Tr1 5 2 3 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max 20 Unit Collector to emitter voltage VCEO IC = 1mA, IB = 0 V Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 25V, IC = 0 0.1 µA Forward current transfer ratio hFE VCE = 2V, IC = 4mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA 500 2500 0.1 V Base to emitter voltage VBE VCE = 2V, IC = 4mA 0.6 V Transition frequency fT VCB = 6V, IE = –4mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON Resistance Ron*1 7 1.0 Ron measuring circuit pF Ω 1kΩ IB=1mA VB Ron= VV VA f=1kHz V=0.3V VB ✕1000(Ω) VA–VB 1 Composite Transistors XP1504 PT — Ta IC — VCE IC — VBE 120 24 250 VCE=2V 100 50 IB=10µA 16 9µA 8µA 7µA 12 6µA 5µA 8 4µA 3µA Collector current IC (mA) 150 25˚C 100 20 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C –25˚C 80 60 40 20 2µA 4 Ta=75˚C 1µA 0 0 0 20 40 60 0 80 100 120 140 160 2 VCE(sat) — IC Ta=75˚C 25˚C –25˚C 10 100 Cob — VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 10 8 6 4 2 0 3 10 0.4 30 100 Collector to base voltage VCB (V) 0.6 2000 1600 Ta=75˚C 25˚C 1200 –25˚C 800 400 1 3 10 30 100 0.8 1.0 1.2 fT — I E 300 Collector current IC (mA) Collector current IC (mA) 12 0.2 Base to emitter voltage VBE (V) 120 0 1 0 12 VCB=6V f=200MHz Ta=25˚C VCE=2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 1 0.001 0.1 2 10 2400 IC/IB=10 1 8 hFE — IC 10 0.01 6 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 0.1 4 Transition frequency fT (MHz) 0 1000 100 80 60 40 20 0 –1 –3 –10 –30 Emitter current IE (mA) –100