SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 2 - APRIL 2000 ZDT1053 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T1053 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 150 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 245 V IC=100µA 150 245 V IC=100µA VCEO 75 100 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 150 245 V IC=100µA, VEB=1V 5 8.8 V IE=100µA VALUE UNIT VCBO 150 V Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO 0.3 10 nA VCB=120V Emitter Cutoff Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cutoff Current ICES 0.3 10 nA VCES=120V Collector-Emitter Saturation VCE(sat) Voltage 17 70 120 150 300 25 100 150 200 350 mV mV mV mV mV IC=0.2A, IB=20mA* IC=1A, IB=50mA* IC=1A, IB=10mA* IC=2A, IB=50mA* IC=5A, IB=250mA* Base-Emitter Saturation Voltage VBE(sat) 1100 1200 mV IC=5A, IB=250mA* Base-Emitter Turn-On Voltage VBE(on) 1000 1100 mV IC=5A, VCE=2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 140 Output Capacitance Cobo 21 ton toff Collector-Emitter Voltage VCEO 75 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5 A 500 mA -55 to +150 °C Base Current IB Operating and Storage Temperature Range Tj:Tstg THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Switching Times 260 300 150 30 420 450 220 50 15 IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* 1200 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 90 ns IC=2A, IB=20mA, VCC=50V 750 ns IC=2A, IB=±20mA, VCC=50V 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 363 3 - 364 SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1053 ISSUE 1 - NOVEMBER 1995 ZDT1053 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T1053 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 150 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 245 V IC=100µA 150 245 V IC=100µA VCEO 75 100 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 150 245 V IC=100µA, VEB=1V 5 8.8 V IE=100µA VALUE UNIT VCBO 150 V Emitter-Base Breakdown Voltage V(BR)EBO Collector Cutoff Current ICBO 0.3 10 nA VCB=120V Emitter Cutoff Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cutoff Current ICES 0.3 10 nA VCES=120V Collector-Emitter Saturation VCE(sat) Voltage 17 70 120 150 300 25 100 150 200 440 mV mV mV mV mV IC=0.2A, IB=20mA* IC=1A, IB=50mA* IC=1A, IB=10mA* IC=2A, IB=50mA* IC=5A, IB=250mA* Base-Emitter Saturation Voltage VBE(sat) 1100 1200 mV IC=5A, IB=250mA* Base-Emitter Turn-On Voltage VBE(on) 1000 1100 mV IC=5A, VCE=2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 140 Output Capacitance Cobo 21 ton toff Collector-Emitter Voltage VCEO 75 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5 A 500 mA -55 to +150 °C Base Current IB Operating and Storage Temperature Range Tj:Tstg THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Switching Times 260 300 150 30 420 450 220 50 15 IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* 1200 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 90 ns IC=2A, IB=20mA, VCC=50V 750 ns IC=2A, IB=±20mA, VCC=50V 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 363 3 - 364 ZDT1053 TYPICAL CHARACTERISTICS 0.8 0.8 +25°C 0.6 IC/IB=30 0.6 IC/IB=10 IC/IB=30 IC/IB=100 0.4 -55°C +25°C +100°C +175°C 0.4 0.2 0.2 1mA 10mA 100mA 1A 10A 1mA 10mA IC-Collector Current VCE(sat) v IC +100°C 600 0.8 +25°C 500 400 -55°C 300 200 10mA 100mA 1A +25°C 0.4 +100°C 1mA 10A VCE=2V 1.0 0.2 1mA -55°C +25°C +100°C +175°C 10mA 100mA 10mA 100mA 1A VBE(sat) v Ic hFE v IC 0.4 +175°C IC-Collector Current IC-Collector Current 0.6 -55°C 0.6 0.2 100 0.8 10A 1.0 IC/IB=30 700 VCE=2V 1.2 1A IC-Collector Current VCE(sat) v IC 1mA 100mA 1A 10A IC-Collector Current VBE(on) v IC 3 - 365 10A