ZETEX ZDT617

SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ZDT617
ISSUE 1 - NOVEMBER 1995
C1
B1
C1
E1
C2
B2
C2
E2
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL — T617
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
15
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
12
A
Continuous Collector Current
IC
3
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
Ptot
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
VALUE
UNIT
2
2.5
W
W
16
20
mW/ °C
mW/ °C
62.5
50
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
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ZDT617
ZDT617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base
Breakdown Voltage
V(BR)CBO
15
70
MAX. UNIT
V
CONDITIONS.
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
15
18
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
8.2
V
IE=100µ A
Collector Cutoff
Current
ICBO
100
nA
VCB=10V
Emitter Cutoff
Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Cutoff Current
ICES
100
nA
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
200
mV
mV
mV
IC=0.1A, I B=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
1.0
V
IC=3A, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.84
1.0
V
IC=3A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
200
300
200
150
415
450
320
240
80
Transition
Frequency
fT
80
120
Output Capacitance
Cobo
30
Turn-On Time
ton
120
Turn-Off Time
toff
160
ns
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
40
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=3A
IB1=IB2=50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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ZDT617
ZDT617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base
Breakdown Voltage
V(BR)CBO
15
70
MAX. UNIT
V
CONDITIONS.
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
15
18
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
8.2
V
IE=100µ A
Collector Cutoff
Current
ICBO
100
nA
VCB=10V
Emitter Cutoff
Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Cutoff Current
ICES
100
nA
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
200
mV
mV
mV
IC=0.1A, I B=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
1.0
V
IC=3A, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.84
1.0
V
IC=3A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
200
300
200
150
415
450
320
240
80
Transition
Frequency
fT
80
120
Output Capacitance
Cobo
30
Turn-On Time
ton
120
Turn-Off Time
toff
160
ns
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
40
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
ns
VCC=10V, IC=3A
IB1=IB2=50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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