SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT617 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T617 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 12 A Continuous Collector Current IC 3 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally VALUE UNIT 2 2.5 W W 16 20 mW/ °C mW/ °C 62.5 50 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 327 ZDT617 ZDT617 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 15 70 MAX. UNIT V CONDITIONS. IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 15 18 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 8.2 V IE=100µ A Collector Cutoff Current ICBO 100 nA VCB=10V Emitter Cutoff Current IEBO 100 nA VEB=4V Collector-Emitter Cutoff Current ICES 100 nA VCES=10V Collector-Emitter Saturation Voltage VCE(sat) 8 70 150 14 100 200 mV mV mV IC=0.1A, I B=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.0 V IC=3A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 0.84 1.0 V IC=3A, VCE=2V* Static Forward Current Transfer Ratio hFE 200 300 200 150 415 450 320 240 80 Transition Frequency fT 80 120 Output Capacitance Cobo 30 Turn-On Time ton 120 Turn-Off Time toff 160 ns IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* 40 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz ns VCC=10V, IC=3A IB1=IB2=50mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 328 3 - 329 ZDT617 ZDT617 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 15 70 MAX. UNIT V CONDITIONS. IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 15 18 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 8.2 V IE=100µ A Collector Cutoff Current ICBO 100 nA VCB=10V Emitter Cutoff Current IEBO 100 nA VEB=4V Collector-Emitter Cutoff Current ICES 100 nA VCES=10V Collector-Emitter Saturation Voltage VCE(sat) 8 70 150 14 100 200 mV mV mV IC=0.1A, I B=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.0 V IC=3A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 0.84 1.0 V IC=3A, VCE=2V* Static Forward Current Transfer Ratio hFE 200 300 200 150 415 450 320 240 80 Transition Frequency fT 80 120 Output Capacitance Cobo 30 Turn-On Time ton 120 Turn-Off Time toff 160 ns IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* 40 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz ns VCC=10V, IC=3A IB1=IB2=50mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 328 3 - 329