SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – ZHB6792 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPNs PNPs UNIT V Collector-Base Voltage V CBO 70 -70 Collector-Emitter Voltage V CEO 70 -70 V Emitter-Base Voltage V EBO 5 -5 V Peak Pulse Current I CM 2 -2 A Continuous Collector Current IC 1 -1 A Operating and Storage Temperature Range T j:T stg SCHEMATIC DIAGRAM -55 to +150 °C CONNECTION DIAGRAM C3, C4 B2 Q2 Q3 E2, E3 B3 B4 4 C3,C4 C1, C2 B1 3 E1,E4 B2 2 B4 E2,E3 1 Q4 6 Q1 7 B1 8 C1,C2 5 E1, E4 B3 ZHB6792 THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T amb = 25°C* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally P tot 1.25 2 W W Derate above 25°C* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally 10 16 mW/ °C mW/ °C Thermal Resistance - Junction to Ambient* Any single transistor “on” Q1 and Q3 “on” or Q2 and Q4 “on” equally 100 62.5 °C/ W °C/ W Thermal Resistance (°C/W) Thermal Resistance (°C/W) 100 D=t1 tP t1 80 tP 60 D=1 D=0.5 D=0.2 D=0.1 40 D=0.05 20 Single Pulse 0 100us 1ms 10ms 100ms 1s 10s 100s D=t1 tP t1 50 tP 40 30 D=1 D=0.5 D=0.2 D=0.1 20 10 D=0.05 Single Pulse 0 100us 1ms 10ms 100ms 1s 10s 100s Pulse Width Pulse Width Transient Thermal Resistance Single Transistor "On" Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On" 10 Power Dissapation (W) 2.0 Max Power Dissipation - (Watts) 60 1.5 Du al 1.0 Sin gle 0.5 Dual Transistors † Single Transistor 1 Full Copper Dual Transistors † Minimum Copper Single Transistor 0.1 0 0 20 40 60 80 100 120 140 160 0.1 1 T - Temperature (°C) Pcb Area (inches squared) Derating curve Pd v Pcb Area Comparison 10 * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. †"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on. ZHB6792 NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS. BreakdownVoltages V (BR)CBO 70 V I C=100µA V (BR)CEO 70 V I C=10mA* V (BR)EBO 5 V I E=100µA I CBO 0.1 µA V CB=55V I EBO 0.1 µA V EB=4V V CE(sat) 0.15 0.5 V V I C=0.1A, I B=0.5mA* I C=1A, I B=10mA* V BE(sat) 0.9 V I C=1A, I B=10mA* Base-Emitter Turn-On Voltage V BE(on) 0.9 V I C =1A, V CE=2V* Static Forward Current Transfer Ratio h FE 500 400 150 Transition Frequency fT 150 Input Capacitance C ibo Output Capacitance Switching Times Cut-Off Currents Saturation Voltages I C=100mA,V CE=2V* I C=500mA, V CE =2V* I C=1A,V CE=2V* MHz I C=50mA, V CE=5V, f=50MHz 200 pF V EB=0.5V, f=1MHz C obo 12 pF V CB=10V, f=1MHz t on t off 46 1440 ns ns I C=500mA, I B1=50mA I B2=50mA, V CC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ZHB6792 PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -75 V I C=-100µA V (BR)CEO -70 V I C=-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-100µA Collector Cut-Off Current I CBO -0.1 µA V CB=-40V Emitter Cut-Off Current I EBO -0.1 µA V EB=-4V Collector-Emitter Saturation Voltage V CE(sat) -0.45 -0.5 V V I C=-500mA, I B=-5mA* I C=-1A, I B=-25mA* Base-Emitter Saturation Voltage V BE(sat) -0.95 V I C=-1A, I B=-25mA* Base-Emitter Turn-On Voltage V BE(on) V I C =-1A, V CE=-2V* Static Forward Current Transfer h FE 300 250 200 Transition Frequency fT 100 Input Capacitance C ibo Output Capacitance Switching Times -0.75 800 I C=-10mA, V CE=-2V* I C=-500mA, V CE=-2V* I C=-1A, V CE=-2V* MHz I C=-50mA, V CE=-5V f=50MHz 225 pF V EB=-0.5V, f=1MHz C obo 22 pF V CB=-10V, f=1MHz t on t off 35 750 ns ns I C=-500mA, I B1=-50mA I B2=-50mA, V CC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ZHB6792 PNP TRANSISTOR TYPICAL CHARACTERISTICS 1.8 1.6 1.8 IC/IB=40 IC/IB=20 IC/IB=10 Tamb=25°C 1.6 1.4 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 0.6 0.4 0.01 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C VCE=2V 1.6 750 1.0 500 0.8 0.6 250 0.4 0.2 1.4 VBE(sat) - (Volts) 1.2 hFE - Typical Gain hFE - Normalised Gain 0.8 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C IC/IB=40 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 10 1 0 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C +25°C +100°C VCE=2V 1.4 VBE - (Volts) 1.0 10 1.4 1.6 1.2 0 0 0 IC/IB=100 0.2 0.2 1.6 -55°C +25°C +100°C +175°C 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 IC - Collector Current (Amps) VBE(on) v IC 10 10 ZHB6792 NPN TRANSISTOR TYPICAL CHARACTERISTICS IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25°C 0.8 VCE(sat) - (Volts) VCE(sat) - (Volts) 0.8 0.6 0.4 0.2 0.01 0.1 1 0.4 0 10 0.1 1 10 VCE(sat) v IC VCE(sat) v IC VCE=2V 1.6 1.0 1K 0.8 0.6 500 0.4 0.2 VBE(sat) - (Volts) 1.5K 1.2 1.4 -55°C +25°C +100°C +175°C IC/IB=100 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 10 1 0 1.6 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.0 0.8 0.6 0.4 0.2 0 0.1 IC - Collector Current (Amps) 1.2 0 0.01 IC - Collector Current (Amps) 1.4 VBE - (Volts) 0.01 IC - Collector Current (Amps) hFE - Typical Gain hFE - Normalised Gain 0.6 IC - Collector Current (Amps) +100°C +25°C -55°C 1.4 IC/IB=100 0.2 0 1.6 -55°C +25°C +100°C +175°C 0.01 0.1 1 IC - Collector Current (Amps) VBE(on) v IC 10 10 ZHB6792 He A E 8 e1 1 2 7 D e2 3 b 6 4 5 A1 o 45° c Lp Dim Millimetres Inches 3 Min Typ Max Min Typ Max A – – 1.7 – – 0.067 A1 0.02 – 0.1 0.0008 – 0.004 b – 0.7 – – 0.028 – c 0.24 – 0.32 0.009 – 0.013 D 6.3 – 6.7 0.248 – 0.264 E 3.3 – 3.7 0.130 – 0.145 e1 – 4.59 – – 0.180 – e2 – 1.53 – – 0.060 – He 6.7 – 7.3 0.264 – 0.287 Lp 0.9 – – 0.035 – – Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1998 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. 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