NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 MARCH 94 FEATURES * 40 Volt VCEO * 1 Amp continuous current * Fast switching C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 500 W Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Sustaining Voltage VCEO(SUS) 40 V IC=10mA, IB=0* Collector Cut-Off Current ICBO 500 300 µA nA VCB=40V, IE=0 VCB=40V, IE=0, Tamb=150°C Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.7 1.2 V IC=500mA, IB=50mA* Static Forward Current Transfer Ratio hFE 25 150 Transition Frequency fT 200 Input Capacitance Cib 36 Output Capacitance Cob 5.75 Turn-On Time Turn-Off Time IC=500mA, VCE=1V* MHz IC=50mA, VCE=10V, f=100MHz 50 pF VEB=0.5V, IC=0, f=1MHz 10 pF VCB=10V, IE=0, f=1MHz ton 40 ns VCC=30V, IC=500mA, IB(on)=50mA, -VBE(off)=2V toff 75 ns VCC=30V, IC=500mA, IB(on)=-IB(off)=50mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-166