PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 TYPICAL CHARACTERISTICS 1000 VCB=-5V f=100MHz 600 IC - (mA) fT - (MHz) 800 400 IB=-5.0mA IB=-4.5mA IB=-4.0mA -200 IB=-3.5mA IB=-3.0mA IB=-2.5mA -150 IB=-2.0mA 0 -10 -20 -30 -40 -100 0 -5 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V VCE(sat) v IC Emitter-Base Voltage VEBO -4 V Base Current IB -40 mA Continuous Collector Current IC -200 mA Power Dissipation at Tamb=25°C Ptot 300 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C IB=-100µA to 0µA in 10µA steps -80 IB=-100µA -12 IC - (mA) IC - (mA) -4 IC v fT -16 -8 IB=0µA -4 -4 -3 VCE(sat) - (Volts) -100 0 -2 ABSOLUTE MAXIMUM RATINGS. IC - (mA) -20 0 -1 E E-Line TO92 Compatible IB=-1.0mA IB=-0.5mA 0 -50 C B IB=-1.5mA -50 200 0 -250 ZTX510 ISSUE 2 MARCH 94 FEATURES * 12 Volt VCEO * fT=400MHz -8 -12 -16 -20 IB=-10mA IB=-8mA IB=-6mA IB=-4mA IB=-2mA IB=-1mA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -60 PARAMETER SYMBOL UNIT CONDITIONS. V(BR)CBO -12 V IC=-10µ A -20 Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage VCEO(sus) -12 V IC=-10mA 0 Collector Cut-Off Current ICBO -0.1 µA VCB=-6V Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.2 -0.5 V V V IC=-10mA, IB=-1mA* IC=-30mA, IB=-3mA* IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.98 -1.2 V V V IC=-10mA, IB=-1mA* IC=-30mA, IB=-3mA* IC=-100mA, IB=-10mA* -40 -0.6 -0.7 -0.8 -0.9 VCE(sat) - (Volts) VBE - (Volts) VCE v IC VBE v IC -1.0 -1.1 MIN. TYP. -0.76 -0.82 -1.7 Static Forward Current hFE Transfer Ratio 30 40 20 Transition Frequency fT 400 Output Capacitance Cobo Input Capacitance Cibo Switching Times MAX. IC=-10mA, VCE=-0.3V* IC=-30mA, VCE=-0.5V* IC=-100mA, VCE=-1V* 150 MHz IC=-30mA, VCE=-5V f=100MHz 6 pF VCB=-5V, f=140KHz 6 pF VEB=-0.5V, f=140KHz ton 60 ns toff 90 ns IC=-30mA, IB1=IB2=-1.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-187 3-186 PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 TYPICAL CHARACTERISTICS 1000 VCB=-5V f=100MHz 600 IC - (mA) fT - (MHz) 800 400 IB=-5.0mA IB=-4.5mA IB=-4.0mA -200 IB=-3.5mA IB=-3.0mA IB=-2.5mA -150 IB=-2.0mA 0 -10 -20 -30 -40 -100 0 -5 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V VCE(sat) v IC Emitter-Base Voltage VEBO -4 V Base Current IB -40 mA Continuous Collector Current IC -200 mA Power Dissipation at Tamb=25°C Ptot 300 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C IB=-100µA to 0µA in 10µA steps -80 IB=-100µA -12 IC - (mA) IC - (mA) -4 IC v fT -16 -8 IB=0µA -4 -4 -3 VCE(sat) - (Volts) -100 0 -2 ABSOLUTE MAXIMUM RATINGS. IC - (mA) -20 0 -1 E E-Line TO92 Compatible IB=-1.0mA IB=-0.5mA 0 -50 C B IB=-1.5mA -50 200 0 -250 ZTX510 ISSUE 2 MARCH 94 FEATURES * 12 Volt VCEO * fT=400MHz -8 -12 -16 -20 IB=-10mA IB=-8mA IB=-6mA IB=-4mA IB=-2mA IB=-1mA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -60 PARAMETER SYMBOL UNIT CONDITIONS. V(BR)CBO -12 V IC=-10µ A -20 Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage VCEO(sus) -12 V IC=-10mA 0 Collector Cut-Off Current ICBO -0.1 µA VCB=-6V Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.2 -0.5 V V V IC=-10mA, IB=-1mA* IC=-30mA, IB=-3mA* IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.98 -1.2 V V V IC=-10mA, IB=-1mA* IC=-30mA, IB=-3mA* IC=-100mA, IB=-10mA* -40 -0.6 -0.7 -0.8 -0.9 VCE(sat) - (Volts) VBE - (Volts) VCE v IC VBE v IC -1.0 -1.1 MIN. TYP. -0.76 -0.82 -1.7 Static Forward Current hFE Transfer Ratio 30 40 20 Transition Frequency fT 400 Output Capacitance Cobo Input Capacitance Cibo Switching Times MAX. IC=-10mA, VCE=-0.3V* IC=-30mA, VCE=-0.5V* IC=-100mA, VCE=-1V* 150 MHz IC=-30mA, VCE=-5V f=100MHz 6 pF VCB=-5V, f=140KHz 6 pF VEB=-0.5V, f=140KHz ton 60 ns toff 90 ns IC=-30mA, IB1=IB2=-1.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-187 3-186