DIODES ZTX457

NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ZTX457
ISSUE 2 – MARCH 1994
FEATURES
* 300 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
500
mA
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
1
W
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
UNIT
CONDITIONS.
300
V
IC=100µ A, IE=0
VCEO(sus)
300
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µ A
Collector Cut-Off
Current
ICBO
100
10
µA
nA
VCB=200V
VCB=200V, Tamb=100°C
Emitter Cut-Off Current IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
V
IC=100mA, IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1
V
IC=100mA, IB=10mA*
Base-Emitter
Turn On Voltage
VBE(on)
1
V
IC=100mA, VCE=10V*
Static Forward Current hFE
Transfer Ratio
50
50
25
Transition Frequency
75
fT
TYP.
MAX.
IC=10mA, VCE=10V*
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
300
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-181
IC=50mA, VCE=10V
f=20MHz