NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX457 ISSUE 2 MARCH 1994 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A 500 mA Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 300 V IC=100µ A, IE=0 VCEO(sus) 300 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 100 10 µA nA VCB=200V VCB=200V, Tamb=100°C Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1 V IC=100mA, IB=10mA* Base-Emitter Turn On Voltage VBE(on) 1 V IC=100mA, VCE=10V* Static Forward Current hFE Transfer Ratio 50 50 25 Transition Frequency 75 fT TYP. MAX. IC=10mA, VCE=10V* IC=50mA, VCE=10V* IC=100mA, VCE=10V* 300 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-181 IC=50mA, VCE=10V f=20MHz