NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT605 ISSUE 1 SEPT 93 FEATURES * 120 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX605 FOR GRAPHS B C E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 140 V IC=100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 120 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.01 10 µA µA VCB=120V, IE=0 VCB=120V,T amb =100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=8V, IC=0 Colllector-Emitter Cut-Off Current ICES 10 µA VCES=120V Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 V V IC=0.25A, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 V IC=1A, VCE=5V* Static Forward Current hFE Transfer Ratio 2000 5000 2000 500 Transition Frequency 150 fT TYP. MAX. IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K MHz * Measured under pulse conditions. Pulse width=300µs. Duty cycle ≤2% 3-44 IC=100mA, VCE=10V f=20MHz