PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX788A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. Transition Frequency fT 100 150 Output Capacitance Cobo 30 Switching Times ton toff 40 500 MAX. 60 UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz pF VCB=-10V, f=1MHz ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% SYMBOL MAX. Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case C B UNIT °C/W °C/W °C/W 175 116 70 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS PARAMETER ZTX788A PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94 FEATURES * 15 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -20 Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -10 A Continuous Collector Current IC -3 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 2.0 C 1.5 Am 1.0 0.5 0 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -20 -30 V IC=-100µA D=t1/tP Collector-Emitter Breakdown Voltage V(BR)CEO -15 -20 V IC=-10mA* tP Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-10V VCB=-10V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.025 -0.035 V -0.25 -0.32 V -0.28 -0.33 V IC=-0.1A, IB=-2mA* IC=-2A, IB=-20mA* IC=-3A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.85 V IC=-2A, IB=-20mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 V IC=-2A, VCE=-3V* Static Forward Current Transfer Ratio hFE 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 PARAMETER -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-272 300 250 200 80 3-271 MAX. -1.0 800 IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-2A, VCE=-1V* IC=-10A, VCE=-2V* PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX788A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. Transition Frequency fT 100 150 Output Capacitance Cobo 30 Switching Times ton toff 40 500 MAX. 60 UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V f=50MHz pF VCB=-10V, f=1MHz ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% SYMBOL MAX. Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case C B UNIT °C/W °C/W °C/W 175 116 70 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS PARAMETER ZTX788A PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94 FEATURES * 15 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -20 Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -10 A Continuous Collector Current IC -3 A Practical Power Dissipation* Ptotp 1.5 W Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 2.0 C 1.5 Am 1.0 0.5 0 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -20 -30 V IC=-100µA D=t1/tP Collector-Emitter Breakdown Voltage V(BR)CEO -15 -20 V IC=-10mA* tP Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-10V VCB=-10V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.025 -0.035 V -0.25 -0.32 V -0.28 -0.33 V IC=-0.1A, IB=-2mA* IC=-2A, IB=-20mA* IC=-3A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.85 V IC=-2A, IB=-20mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 V IC=-2A, VCE=-3V* Static Forward Current Transfer Ratio hFE 200 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) 2.5 PARAMETER -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.C.) t1 100 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-272 300 250 200 80 3-271 MAX. -1.0 800 IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-2A, VCE=-1V* IC=-10A, VCE=-2V*