NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT 90 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 22 pF VCB=20V, f=1MHz Switching Times ton toff 66 2130 ns ns IC=1A, IB!=100mA IB2=100mA, VCC=50V 200 200 55 10 100 100 35 IC=10mA, VCE=5V IC=1A, VCE=5V* IC=4A, VCE=5V* IC=10A, VCE=5V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX855 ISSUE 2 MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 250 Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 4 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 D.C. 150 t1 100 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 250 375 V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 250 375 V IC=1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO 150 180 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA Collector Cut-Off Current ICBO 50 1 µA nA VCB=200V VCB=200V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ 50 1 µA nA VCB=200V VCB=200V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 20 35 60 210 40 60 100 260 mV mV mV mV IC=100mA, IB=5mA* IC=500mA, IB=50mA* IC=1A, IB=100mA* IC=4A, IB=400mA* Base-Emitter Saturation Voltage VBE(sat) 960 1100 mV IC=4A, IB=400mA* D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-301 PARAMETER 2-300 MAX. NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT 90 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 22 pF VCB=20V, f=1MHz Switching Times ton toff 66 2130 ns ns IC=1A, IB!=100mA IB2=100mA, VCC=50V 200 200 55 10 100 100 35 IC=10mA, VCE=5V IC=1A, VCE=5V* IC=4A, VCE=5V* IC=10A, VCE=5V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX855 ISSUE 2 MARCH 94 FEATURES * 150 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 250 Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 10 A Continuous Collector Current IC 4 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 D.C. 150 t1 100 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 250 375 V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 250 375 V IC=1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO 150 180 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA Collector Cut-Off Current ICBO 50 1 µA nA VCB=200V VCB=200V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ 50 1 µA nA VCB=200V VCB=200V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 20 35 60 210 40 60 100 260 mV mV mV mV IC=100mA, IB=5mA* IC=500mA, IB=50mA* IC=1A, IB=100mA* IC=4A, IB=400mA* Base-Emitter Saturation Voltage VBE(sat) 960 1100 mV IC=4A, IB=400mA* D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-301 PARAMETER 2-300 MAX. ZTX855 TYPICAL CHARACTERISTICS 1.6 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 300 1.4 1.2 1.0 0.8 0.6 0.1 1 10 VCE=5V VCE=10V 100 0.4 0.2 0 0.01 200 100 0.01 IC - Collector Current (Amps) 0.1 100 10 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=5V 2.0 1.5 VBE - (Volts) VBE(sat) - (Volts) 2.0 IC/IB=10 IC/IB=50 1.0 0.5 IC - Collector Current (Amps) 0.01 1 0.1 10 100 0.01 0.1 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test at Tamb=25°C 1 0.1 1.0 0.5 0.001 10 1.5 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-302 100 hFE - Typical Gain hFE - Normalised Gain VCE(sat) - (Volts) 0.8