SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 FEATURES * 450 Volts VDS * RDS(on)= 50Ω * Ease of paralleling ZVN0545G ✪ D S D PARTMARKING DETAIL – ZVN0545 G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 450 V Continuous Drain Current at T amb=25°C ID 140 mA Pulsed Drain Current I DM 600 mA Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range Tj :T stg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 450 Gate-Source Threshold Voltage V GS(th) 1 Gate-Body Leakage Zero Gate Voltage Drain Current MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 3 V I D =1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V I DSS 10 400 µA µA V DS=450 V, V GS=0 V DS=405 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1)(2) g fs 150 50 100 mA V DS=25 V, V GS=10V Ω V GS=10V,I D=100mA mS V DS=25V,I D=100mA Input Capacitance (2) C iss 70 pF Common Source Output Capacitance (2) C oss 10 pF Reverse Transfer Capacitance (2) C rss 4 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns Fall Time (2)(3) tf 10 ns V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=100mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 384