ZVN3306F FEATURES * RDS(on)= 5Ω * 60 Volt VDS COMPLEMENTARY TYPE - S D ZVP3306F G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb =25°C ID 150 mA Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 Gate-Body Leakage MAX. UNIT CONDITIONS. V I D =1mA, V GS =0V 2.4 V I D =1mA, V DS = V GS I GSS 20 nA V GS =± 20V, V DS =0V Zero Gate Voltage Drain Current I DSS 0.5 50 µA µA V DS =60V, V GS =0V V DS =48V, V GS =0V, T=125°C (2) On-State Drain Current I D(on) mA V DS =18V, V GS =10V Static Drain-Source On-State Resistance R DS(on) 5 Ω V GS =10V, I D =500mA Forward Transconductance g fs mS V DS =18V, I D =500mA Input Capacitance C iss 35 pF Common Source Output Capacitance C oss 25 pF Reverse Transfer Capacitance C rss 8 pF Turn-On Delay Time t d(on) 3 typ 5 ns Rise Time tr 4 typ 7 ns Turn-Off Delay Time t d(off) 4 typ 6 ns Fall Time tf 5 typ 8 ns http://www.twtysemi.com 750 150 [email protected] V DS =18V, V GS =0V, f=1MHz V DD ≈18V, I D =500mA 4008-318-123 1 of 1