SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS IGSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 10 100 µA µA VDS=60V, VGS=0V VDS=48V, VGS=0V, T=125°C(2) On-State Drain Current (1) ID(on) A VDS=25V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) Ω Ω VGS=10V, ID=1.5A VGS=5V, ID=0.5A mS VDS=25V,ID=1.5A Forward Transconductance (1)(2) gfs 3 1 1.5 300 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDD ≈25V, ID=1.5A, VGEN =10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 402 ISSUE 3 - JANUARY 1996 ✪ FEATURES * Compact geometry * Fast switching speeds * No secondary breakdown and Excellent temperature stability * High input impedance and low current drive * Ease of parralleling D S D G APPLICATIONS * DC-DC converters * Solenoid / relay drivers for automotive applications * Stepper motor drivers and Print head drivers PARTMARKING DETAIL - VDS=25V, VGS=0V, f=1MHz ZVN4206G ZVN4206 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C ID 1 A Pulsed Drain Current IDM 8 A Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 3 - 401 VALUE UNIT SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS IGSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 10 100 µA µA VDS=60V, VGS=0V VDS=48V, VGS=0V, T=125°C(2) On-State Drain Current (1) ID(on) A VDS=25V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) Ω Ω VGS=10V, ID=1.5A VGS=5V, ID=0.5A mS VDS=25V,ID=1.5A Forward Transconductance (1)(2) gfs 3 1 1.5 300 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDD ≈25V, ID=1.5A, VGEN =10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 402 ISSUE 3 - JANUARY 1996 ✪ FEATURES * Compact geometry * Fast switching speeds * No secondary breakdown and Excellent temperature stability * High input impedance and low current drive * Ease of parralleling D S D G APPLICATIONS * DC-DC converters * Solenoid / relay drivers for automotive applications * Stepper motor drivers and Print head drivers PARTMARKING DETAIL - VDS=25V, VGS=0V, f=1MHz ZVN4206G ZVN4206 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C ID 1 A Pulsed Drain Current IDM 8 A Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 3 - 401 VALUE UNIT ZVN4206G ZVN4206G TYPICAL CHARACTERISTICS 6 10V 9V 8V 4 7V 6V 2 0 10 20 30 40 6 4 7V 6V 5V 4.5V 4V 3.5V 10 2 0 4 6 8 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 1000 1000 900 800 900 800 700 600 VDS=10V 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 4 ID= 3A 1.5A 0.5A 2 0 2 4 6 8 4 2 VGS=3.5V 4.5V 6V 4 6 8 10 VGS-Gate Source Voltage (Volts) 120 80 Ciss 40 Coss Crss 0 10 20 30 40 50 60 70 80 VDS-Drain Source Voltage (Volts) 1.0 20V 0.1 1.0 Normalised RDS(on) and VGS(th) 14V n) (o 2.0 DS 1.8 1.6 Re ce ur So ain Dr 1.4 1.2 1.0 0.8 0.6 eR nc ta sis VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) -50 -25 0 25 50 75 100 125 150 175 200 225 10 Tj-Junction Temperature (°C) ID-Drain Current (Amps) On-resistance v drain current VGS=10V ID=1.5A 2.2 Normalised RDS(on) and VGS(th) v Temperature 3 - 403 3 4 5 6 7 8 9 10 VDS= 20V 40V 60V 14 ID=1.5A 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Gate charge v gate-source voltage 2.6 2.4 2 Q-Charge (nC) Capacitance v drain-source voltage 8V 10V 10 0.1 2 Transfer Characteristics Voltage Saturation Characteristics 160 0 0 1 16 200 10 0 Transconductance v gate-source voltage 6 0 0 100 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) 6 400 300 200 0 Transconductance v drain current VDS=10V VDS=10V 500 ID- Drain Current (Amps) C-Capacitance (pF) 8 700 600 10 10 VGS-Gate Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) 10V 9V 8V 2 ID - Drain Current (Amps) VDS-Drain Source Voltage (Volts) 0 5V 4.5V 4V 3.5V 50 8 gfs-Transconductance (mS) 8 VGS= 20V 16V 14V 12V gfs-Transconductance (mS) 10 VGS= 20V 16V 14V 12V ID - Drain Current (Amps) ID - Drain Current (Amps) 10 TYPICAL CHARACTERISTICS 3 - 404 ZVN4206G ZVN4206G TYPICAL CHARACTERISTICS 6 10V 9V 8V 4 7V 6V 2 0 10 20 30 40 6 4 7V 6V 5V 4.5V 4V 3.5V 10 2 0 4 6 8 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 1000 1000 900 800 900 800 700 600 VDS=10V 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 4 ID= 3A 1.5A 0.5A 2 0 2 4 6 8 4 2 VGS=3.5V 4.5V 6V 4 6 8 10 VGS-Gate Source Voltage (Volts) 120 80 Ciss 40 Coss Crss 0 10 20 30 40 50 60 70 80 VDS-Drain Source Voltage (Volts) 1.0 20V 0.1 1.0 Normalised RDS(on) and VGS(th) 14V n) (o 2.0 DS 1.8 1.6 Re ce ur So ain Dr 1.4 1.2 1.0 0.8 0.6 eR nc ta sis VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) -50 -25 0 25 50 75 100 125 150 175 200 225 10 Tj-Junction Temperature (°C) ID-Drain Current (Amps) On-resistance v drain current VGS=10V ID=1.5A 2.2 Normalised RDS(on) and VGS(th) v Temperature 3 - 403 3 4 5 6 7 8 9 10 VDS= 20V 40V 60V 14 ID=1.5A 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Gate charge v gate-source voltage 2.6 2.4 2 Q-Charge (nC) Capacitance v drain-source voltage 8V 10V 10 0.1 2 Transfer Characteristics Voltage Saturation Characteristics 160 0 0 1 16 200 10 0 Transconductance v gate-source voltage 6 0 0 100 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) 6 400 300 200 0 Transconductance v drain current VDS=10V VDS=10V 500 ID- Drain Current (Amps) C-Capacitance (pF) 8 700 600 10 10 VGS-Gate Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) 10V 9V 8V 2 ID - Drain Current (Amps) VDS-Drain Source Voltage (Volts) 0 5V 4.5V 4V 3.5V 50 8 gfs-Transconductance (mS) 8 VGS= 20V 16V 14V 12V gfs-Transconductance (mS) 10 VGS= 20V 16V 14V 12V ID - Drain Current (Amps) ID - Drain Current (Amps) 10 TYPICAL CHARACTERISTICS 3 - 404