DIODES ZVN4206GVTA

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4206GV
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt VDS
* RDS(on)= 1Ω
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
PARTMARKING DETAIL -
D
S
D
G
ZVN4206V
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
60
V
Continuous Drain Current at T amb = 25°C
ID
1
A
Pulsed Drain Current
I DM
8
A
Gate-Source Voltage
V GS
± 20
V
Power Dissipation at T amb = 25°C
P tot
2
W
Continuous Body Diode Current at T amb =
25°C
I SD
600
mA
Avalanche Current - Repetitive
I AR
600
mA
Avalanche Energy - Repetitive
E AR
15
mJ
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
ZVN4206GV
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BV DSS
60
Gate-Source Threshold
Voltage
V GS(th)
1.3
Gate-Body Leakage
MAX. UNIT CONDITIONS.
V
I D=1mA, V GS=0V
3
V
I D =1mA, V DS= V GS
I GSS
100
nA
V GS=± 20V, V DS=0V
Zero Gate Voltage Drain
Current
I DSS
10
100
µA
µA
V DS=60V, V GS=0V
V DS=48V, V GS=0V, T=125°C (2)
On-State Drain Current (1)
I D(on)
A
V DS=25V, V GS=10V
Static Drain-Source On-State
Resistance (1)
R DS(on)
Ω
Ω
V GS=10V, I D=1.5A
V GS=5V, I D=0.5A
Forward Transconductance
(1)(2)
g fs
mS
V DS=25V,I D=1.5A
Input Capacitance (2)
C iss
100
pF
Common Source Output
Capacitance (2)
C oss
60
pF
Reverse Transfer Capacitance
(2)
C rss
20
pF
Turn-On Delay Time (2)(3)
t d(on)
8
ns
Rise Time (2)(3)
tr
12
ns
Turn-Off Delay Time (2)(3)
t d(off)
12
ns
Fall Time (2)(3)
tf
15
ns
3
1
1.5
300
V DS=25V, V GS=0V, f=1MHz
V DD ≈25V, I D=1.5A, V GEN
=10V
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN4206GV
TYPICAL CHARACTERISTICS
10
VGS=
20V
16V
14V
12V
8
6
10V
9V
8V
4
7V
6V
2
0
10
20
30
40
6
4
7V
6V
5V
4.5V
4V
3.5V
10
2
0
4
6
8
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
10
8
6
4
ID=
3A
1.5A
0.5A
2
2
4
6
8
VDS=10V
4
2
0
0
0
6
0
10
VGS-Gate Source Voltage (Volts)
VGS=3.5V
4.5V
6V
4
6
8
10
Transfer Characteristics
8V 10V
2.6
14V
1.0
20V
0.1
1.0
ID-Drain Current (Amps)
On-resistance v drain current
Normalised RDS(on) and VGS(th)
10
0.1
2
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
RDS(on)-Drain Source On Resistance (Ω)
10V
9V
8V
2
ID - Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
0
5V
4.5V
4V
3.5V
50
VGS=
20V
16V
14V
12V
8
ID - Drain Current (Amps)
ID - Drain Current (Amps)
10
2.4
VGS=10V
ID=1.5A
2.2
n)
(o
2.0
DS
1.8
1.6
Re
ce
ur
o
-S
ain
Dr
1.4
1.2
1.0
0.8
0.6
eR
nc
ta
sis
VGS=VDS
ID=1mA
Gate Threshold Voltage VGS(TH)
-50 -25
0
25 50 75 100 125 150 175 200 225
10
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
ZVN4206GV
1000
1000
900
800
900
800
700
600
gfs-Transconductance (mS)
gfs-Transconductance (mS)
TYPICAL CHARACTERISTICS
VDS=10V
500
400
300
200
100
0
0
1
2
3
4
5
6
7
8
9
700
600
400
300
200
100
0
10
0
2
3
120
80
Ciss
40
Coss
Crss
0
20
30
40
50
60
70
80
VGS-Gate Source Voltage (Volts)
160
10
5
6
7
8
9
10
VDS=
20V 40V 60V
16
0
4
Transconductance v gate-source voltage
200
C-Capacitance (pF)
1
VGS-Gate Source Voltage (Volts)
ID- Drain Current (Amps)
Transconductance v drain current
VDS-Drain Source Voltage (Volts)
14
ID=1.5A
12
10
8
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Q-Charge (nC)
Gate charge v gate-source voltage
IAR- Repetative Avalance Current (A)
Capacitance v drain-source voltage
EAR- Repetative Avalance Energy (mJ)
VDS=10V
500
Tj - Junction Temperature (°C)
Maximum repetative avalanche energy
v Junction Temperature
Tj - Junction Temperature (°C)
Maximum repetative avalanche current
v Junction Temperature