SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545G ISSUE 1 – MARCH 98 FEATURES * 450 Volt VDS * RDS(on)=150Ω D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS -450 V Continuous Drain Current at T amb=25°C ID -75 mA Pulsed Drain Current I DM -400 mA Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 2 W Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS -450 Gate-Source Threshold Voltage V GS(th) -1.5 Gate-Body Leakage I GSS Zero Gate Voltage Drain Current I DSS On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(2) g fs MAX. UNIT CONDITIONS. V I D=-1mA, V GS=0V V I D =-1mA, V DS= V GS 20 nA V GS=± 20V, V DS=0V -20 -2 µA mA V DS=-450 V, V GS=0 V DS=-360 V, V GS=0V, T=125°C (2) mA V DS=-25 V, V GS=-10V 150 Ω V GS=-10V,I D=-50mA mS V DS=-25V,I D=-50mA -4.5 -100 40 Input Capacitance (2) C iss 120 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) C rss 5 pF Turn-On Delay Time (2)(3) t d(on) 10 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) t d(off) 15 ns Fall Time (2)(3) tf 20 ns V DS=-25 V, V GS=0V, f=1MHz V DD ≈-25V, I D=-50mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator