DIODES ZVP1320F

SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
* VDS - 200V
ZVP1320F
✪
S
D
PARTMARKING DETAIL -
MT
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
-200
V
Continuous Drain Current at Tamb=25°C
ID
-35
mA
mA
Pulsed Drain Current
IDM
-400
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BVDSS
-200
Gate-Source Threshold
Voltage
VGS(th)
-1.5
MAX. UNIT CONDITIONS.
V
ID=-1mA, VGS=0V
-3.5
V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-10
-50
µA
µA
VDS=-200V, VGS=0V
VDS=-160V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
mA
VDS=-25V, VGS=-10V
80
Ω
VGS=-10V, ID=-50mA
mS
VDS=-25V, ID=-50mA
-100
Static Drain-Source On-State RDS(on)
Resistance (1)
Forward Transconductance
(1)(2)
gfs
25
Input Capacitance (2)
Ciss
50
pF
Common Source Output
Capacitance (2)
Coss
15
pF
Reverse Transfer
Capacitance (2)
Crss
5
pF
Turn-On Delay Time (2)(3)
td(on)
8
ns
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
td(off)
8
ns
Fall Time (2)(3)
tf
16
ns
VDS=-25V, VGS=0V, f=1MHz
VDD ≈ -25V, ID=-50mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 423
ZVP1320F
ZVP1320F
-7V
-160
-120
-6V
-80
-5V
-40
-4V
-120
-100
-80
-40
-20
-4V
0
-4
-8
-12
-16
-20 -24
-28 -32 -36
-40
0
VDS - Drain Source Voltage (Volts)
-2
-4
-6
-8
-10
Output Characteristics
-6
ID=
-60mA
-4
-40mA
-2
ID - Drain Current (mA)
-8
-120
-100
VDS=
-10V
-80
-60
-40
0
0
-6
-8
0
-10
VGS-Gate Source Voltage (Volts)
30
Ciss
20
10
-40
-60
-80
Coss
Crss
-100
gfs-Forward Transconductance(mS)
40
-20
-4
-6
-8
-10
30
20
10
0
0
VDS-Drain Source Voltage (Volts)
-2
-4
-6
-8
-10
-6V
-8V
-10V
100
-20V
-1
-10
-100
20
10
-60
-80
-100
-120
ID-Drain Current (mA)
Transconductance v drain current
Capacitance v drain-source voltage
3 - 424
-16
1.0
2.0
3.0
4.0
5.0
6.0
Gate charge v gate-source voltage
2.2
n)
(o
DS
2.0
1.8
1.6
1.4
Dr
1.2
1.0
Re
ce
ur
o
-S
ain
eR
nc
ta
sis
Gate Thresh
old
0.8
VGS=-10V
ID=-50mA
VGS=VDS
ID=-1mA
Voltage VGS
(TH)
0.6
0.4
0 20 40 60 80 100 120 140 160 180
T-Temperature (°C)
On-resistance v drain current
VDS=-10V
-40
-14
-1000
30
-20
-12
-40 -20
10
50
0
-8
-10
2.4
VGS=-5V
60
40
-6
0
1000
ID-Drain Current (mA)
Transfer Characteristics
50
0
-2
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
0
40
ID= -150mA
VDS=
-50V -100V -200V
-4
Q-Charge (nC)
-20
-20mA
-4
VDS=-10V
Transconductance v gate-source voltage
-140
-2
50
0
-2
VGS-Gate Source Voltage (Volts)
Saturation Characteristics
-10
0
60
VDS - Drain Source Voltage (Volts)
RDS(on) -Drain Source Resistance (Ω)
0
VDS-Drain Source Voltage (Volts)
-5V
-60
0
C-Capacitance (pF)
VGS=
-20V
-10V
-8V
-7V
-6V
-140
Normalised RDS(on) and VGS(th)
-200
-160
ID - Drain Current (mA)
ID - Drain Current (mA)
-240
gfs-Forward Transconductance (mS)
VGS=
-20V
-10V
-9V
-8V
-280
VGS-Gate Source Voltage (Volts)
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
3 - 425
Normalised RDS(on) and VGS(th) vs Temperature
ZVP1320F
ZVP1320F
-7V
-160
-120
-6V
-80
-5V
-40
-4V
-120
-100
-80
-40
-20
-4V
0
-4
-8
-12
-16
-20 -24
-28 -32 -36
-40
0
VDS - Drain Source Voltage (Volts)
-2
-4
-6
-8
-10
Output Characteristics
-6
ID=
-60mA
-4
-40mA
-2
ID - Drain Current (mA)
-8
-120
-100
VDS=
-10V
-80
-60
-40
0
0
-6
-8
0
-10
VGS-Gate Source Voltage (Volts)
30
Ciss
20
10
-40
-60
-80
Coss
Crss
-100
gfs-Forward Transconductance(mS)
40
-20
-4
-6
-8
-10
30
20
10
0
0
VDS-Drain Source Voltage (Volts)
-2
-4
-6
-8
-10
-6V
-8V
-10V
100
-20V
-1
-10
-100
20
10
-60
-80
-100
-120
ID-Drain Current (mA)
Transconductance v drain current
Capacitance v drain-source voltage
3 - 424
-16
1.0
2.0
3.0
4.0
5.0
6.0
Gate charge v gate-source voltage
2.2
n)
(o
DS
2.0
1.8
1.6
1.4
Dr
1.2
1.0
Re
ce
ur
o
-S
ain
eR
nc
ta
sis
Gate Thresh
old
0.8
VGS=-10V
ID=-50mA
VGS=VDS
ID=-1mA
Voltage VGS
(TH)
0.6
0.4
0 20 40 60 80 100 120 140 160 180
T-Temperature (°C)
On-resistance v drain current
VDS=-10V
-40
-14
-1000
30
-20
-12
-40 -20
10
50
0
-8
-10
2.4
VGS=-5V
60
40
-6
0
1000
ID-Drain Current (mA)
Transfer Characteristics
50
0
-2
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
0
40
ID= -150mA
VDS=
-50V -100V -200V
-4
Q-Charge (nC)
-20
-20mA
-4
VDS=-10V
Transconductance v gate-source voltage
-140
-2
50
0
-2
VGS-Gate Source Voltage (Volts)
Saturation Characteristics
-10
0
60
VDS - Drain Source Voltage (Volts)
RDS(on) -Drain Source Resistance (Ω)
0
VDS-Drain Source Voltage (Volts)
-5V
-60
0
C-Capacitance (pF)
VGS=
-20V
-10V
-8V
-7V
-6V
-140
Normalised RDS(on) and VGS(th)
-200
-160
ID - Drain Current (mA)
ID - Drain Current (mA)
-240
gfs-Forward Transconductance (mS)
VGS=
-20V
-10V
-9V
-8V
-280
VGS-Gate Source Voltage (Volts)
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
3 - 425
Normalised RDS(on) and VGS(th) vs Temperature