ZVP2106G -2.5 -12V -2.0 -10V -1.5 -9V -8V -1.0 -7V -6V -0.5 -5V -4V 0 0 -10 -20 -30 -40 -50 ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VGS= -20V -18V -14V -3.0 -2.0 -1.8 VGS= -10V -1.6 -1.4 -1.2 -9V -1.0 -8V -0.8 -7V -0.6 -6V -0.4 -5V -4V -3.5V -0.2 0 0 VDS - Drain Source Voltage (Volts) -6 -4 ID= -1A -2 -0.5A -0.25A 0 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -8 -4 1 -0.1 PARAMETER UNIT Drain-Source Voltage VDS -60 V ID -450 mA Pulsed Drain Current IDM -4 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg SYMBOL MIN. BVDSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 -1.0 VDS=-10V -0.8 -0.6 2 W -55 to +150 °C MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS -0.4 Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V -0.2 Zero Gate Voltage Drain Current IDSS -0.5 -100 µA µA VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) A VDS=-18 V, VGS=-10V 5 Ω VGS=-10V,ID=-500mA mS VDS=-18V,ID=-500mA 0 -2 -4 -6 -8 -10 2.4 2.2 n) (o DS 2.0 1.8 1.6 1.4 Dr 1.2 VGS=-10V ID=-0.5A VGS=VDS Gate Thresh ID=-1mA old Voltage VGS(th) 1.0 0.8 0.6 ta sis Re ce r ou -S ain eR nc -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 427 VALUE Continuous Drain Current at Tamb=25°C -1 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) -2.0 SYMBOL Drain-Source Breakdown Voltage Transfer Characteristics ID-Drain Current (Amps) On-resistance v drain current ABSOLUTE MAXIMUM RATINGS. PARAMETER 2.6 -1.0 D G -1.2 -7V -8V -9V -10V 5 S ZVP2106 ZVN2106G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VGS-Gate Source Voltage (Volts) Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) -6V -10 PARTMARKING DETAIL: COMPLEMENTARY TYPE: - D -1.4 Voltage Saturation Characteristics VGS=-5V -8 -1.6 VGS-Gate Source Voltage (Volts) 10 -6 Saturation Characteristics -10 -2 -4 VDS - Drain Source Voltage (Volts) Output Characteristics 0 -2 ZVP2106G ISSUE 3 MARCH 96 FEATURES * 60 Volt VDS * RDS(on)=5Ω TYPICAL CHARACTERISTICS -3.5 SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET gfs 150 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 426 ZVP2106G -2.5 -12V -2.0 -10V -1.5 -9V -8V -1.0 -7V -6V -0.5 -5V -4V 0 0 -10 -20 -30 -40 -50 ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VGS= -20V -18V -14V -3.0 -2.0 -1.8 VGS= -10V -1.6 -1.4 -1.2 -9V -1.0 -8V -0.8 -7V -0.6 -6V -0.4 -5V -4V -3.5V -0.2 0 0 VDS - Drain Source Voltage (Volts) -6 -4 ID= -1A -2 -0.5A -0.25A 0 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -8 -4 1 -0.1 PARAMETER UNIT Drain-Source Voltage VDS -60 V ID -450 mA Pulsed Drain Current IDM -4 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg SYMBOL MIN. BVDSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 -1.0 VDS=-10V -0.8 -0.6 2 W -55 to +150 °C MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS -0.4 Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V -0.2 Zero Gate Voltage Drain Current IDSS -0.5 -100 µA µA VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) A VDS=-18 V, VGS=-10V 5 Ω VGS=-10V,ID=-500mA mS VDS=-18V,ID=-500mA 0 -2 -4 -6 -8 -10 2.4 2.2 n) (o DS 2.0 1.8 1.6 1.4 Dr 1.2 VGS=-10V ID=-0.5A VGS=VDS Gate Thresh ID=-1mA old Voltage VGS(th) 1.0 0.8 0.6 ta sis Re ce r ou -S ain eR nc -40 -20 0 20 40 60 80 100 120 140 160 180 Tj-Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 427 VALUE Continuous Drain Current at Tamb=25°C -1 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) -2.0 SYMBOL Drain-Source Breakdown Voltage Transfer Characteristics ID-Drain Current (Amps) On-resistance v drain current ABSOLUTE MAXIMUM RATINGS. PARAMETER 2.6 -1.0 D G -1.2 -7V -8V -9V -10V 5 S ZVP2106 ZVN2106G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VGS-Gate Source Voltage (Volts) Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) -6V -10 PARTMARKING DETAIL: COMPLEMENTARY TYPE: - D -1.4 Voltage Saturation Characteristics VGS=-5V -8 -1.6 VGS-Gate Source Voltage (Volts) 10 -6 Saturation Characteristics -10 -2 -4 VDS - Drain Source Voltage (Volts) Output Characteristics 0 -2 ZVP2106G ISSUE 3 MARCH 96 FEATURES * 60 Volt VDS * RDS(on)=5Ω TYPICAL CHARACTERISTICS -3.5 SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET gfs 150 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 426 ZVP2106G TYPICAL CHARACTERISTICS 300 gfs-Transconductance (mS) gfs-Transconductance (mS) 300 250 VDS=-10V 200 150 100 50 0 250 150 100 50 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 0 Transconductance v drain current 60 Ciss 40 Coss 20 Crss 0 -30 -40 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 80 -20 -4 -6 -8 -10 Transconductance v gate-source voltage 100 -10 -2 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) 0 VDS=-10V 200 -50 VDS-Drain Source Voltage (Volts) 0 -2 -4 VDS= -20V -30V -50V -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 428