SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS(on)=25Ω ✪ PARTMARKING DETAIL COMPLEMENTARY TYPE ZVP2120 ZVN2120G ZVP2120G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -200 V Continuous Drain Current at Tamb=25°C ID -200 mA Pulsed Drain Current IDM -1.2 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -200 Gate-Source Threshold Voltage VGS(th) -1.5 Gate-Body Leakage V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS IGSS -20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -10 -100 µA µA VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C On-State Drain Current(1) ID(on) mA VDS=-25 V, VGS=-10V Static Drain-Source On-State Resistance (1) RDS(on) Ω VGS=-10V, ID=-150mA Forward Transconductance (1)(2) gfs mS VDS=-25V, ID=-150mA -300 25 50 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 7 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns (2) VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 431 ZVP2120G ZVP2120G TYPICAL CHARACTERISTICS -4.5V -4V 0 -3.5V -20 -40 -60 -80 -100 -0.2 -4.5V -0.1 -3.5V 0 0 VDS - Drain Source Voltage (Volts) -16 -14 -12 -10 -8 -6 ID= -300mA -4 -200mA -2 -100mA -50mA 0 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -20 -4 -6 -8 VDS=-25V 160 140 120 100 80 60 40 20 0 0 -10 -0.2 -0.6 -0.4 -10V -0.2 80 Ciss 60 40 20 0 Crss -4 -6 -8 -10 0 -10 -20 -30 -40 -50 10 -1 -10 Normalised RDS(on) and VGS(th) ID= -300mA -200mA -I00mA -50mA -20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage 2.2 n) (o DS 1.8 1.6 Re ce ur So ain Dr 1.4 1.2 eR nc ta sis Gate Thresh old 0.8 VGS=-10V ID=-0.1A VGS=VDS ID=-1mA 1.0 Voltage VGS (th ) 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 T-Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 432 0 -2 -4 -6 -8 -10 0 ID=- 0.4A -2 VDS= -50V -100V -180V -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Gate charge v gate-source voltage 2.4 2.0 20 Q-Charge (nC) Capacitance v drain-source voltage 2.6 50 40 0 VDS-Drain Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 80 60 Transconductance v gate-source voltage Coss -2 VDS=-25V 100 VGS-Gate Source Voltage (Volts) 100 -0.6 0 140 120 -0.8 Transconductance v drain current VGS-Gate Source Voltage (Volts) 100 -0.4 160 ID- Drain Current (Amps) VDS= -25V VGS-Gate Source Voltage (Volts) RDS(ON) -Drain Source Resistance (Ω) -4 Saturation Characteristics -18 -2 -2 200 180 VDS - Drain Source Voltage (Volts) Output Characteristics 0 -4V C-Capacitance (pF) 0 -5V 200 180 gfs-Transconductance (mS) -5V -0.2 -0.3 VGS-Gate Source Voltage (Volts) -6V -0.4 VGS= -10V -8V -7V -6V -0.4 gfs-Transconductance (mS) VGS= -10V -8V -7V -0.6 ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 3 - 433 ZVP2120G ZVP2120G TYPICAL CHARACTERISTICS -4.5V -4V 0 -3.5V -20 -40 -60 -80 -100 -0.2 -4.5V -0.1 -3.5V 0 0 VDS - Drain Source Voltage (Volts) -16 -14 -12 -10 -8 -6 ID= -300mA -4 -200mA -2 -100mA -50mA 0 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -20 -4 -6 -8 VDS=-25V 160 140 120 100 80 60 40 20 0 0 -10 -0.2 -0.6 -0.4 -10V -0.2 80 Ciss 60 40 20 0 Crss -4 -6 -8 -10 0 -10 -20 -30 -40 -50 10 -1 -10 Normalised RDS(on) and VGS(th) ID= -300mA -200mA -I00mA -50mA -20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage 2.2 n) (o DS 1.8 1.6 Re ce ur So ain Dr 1.4 1.2 eR nc ta sis Gate Thresh old 0.8 VGS=-10V ID=-0.1A VGS=VDS ID=-1mA 1.0 Voltage VGS (th ) 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 T-Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 432 0 -2 -4 -6 -8 -10 0 ID=- 0.4A -2 VDS= -50V -100V -180V -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Gate charge v gate-source voltage 2.4 2.0 20 Q-Charge (nC) Capacitance v drain-source voltage 2.6 50 40 0 VDS-Drain Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 80 60 Transconductance v gate-source voltage Coss -2 VDS=-25V 100 VGS-Gate Source Voltage (Volts) 100 -0.6 0 140 120 -0.8 Transconductance v drain current VGS-Gate Source Voltage (Volts) 100 -0.4 160 ID- Drain Current (Amps) VDS= -25V VGS-Gate Source Voltage (Volts) RDS(ON) -Drain Source Resistance (Ω) -4 Saturation Characteristics -18 -2 -2 200 180 VDS - Drain Source Voltage (Volts) Output Characteristics 0 -4V C-Capacitance (pF) 0 -5V 200 180 gfs-Transconductance (mS) -5V -0.2 -0.3 VGS-Gate Source Voltage (Volts) -6V -0.4 VGS= -10V -8V -7V -6V -0.4 gfs-Transconductance (mS) VGS= -10V -8V -7V -0.6 ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 3 - 433