ZETEX ZVP3306

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVP3306A
TYPICAL CHARACTERISTICS
-1.2
VGS=-20V
-14V
-0.8
-12V
-10V
-0.6
-9V
-8V
-0.4
-7V
-6V
-5V
-0.2
-4V
-14V
-10
-20
-30
-40
-0.6
-10V
-0.4
-9V
-8V
-7V
-0.2
VDS - Drain Source Voltage (Volts)
-8
ID=
-6
-400mA
-4
-2
-200mA
0
-100mA
0
-2
-4
-6
-8
-10
ID(On)-On-State Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
Output Characteristics
-4
-6
-8
-10
-7V
-10V
-15V
10
-20V
-100
-1000
ID-Drain Current (mA)
On-resistance vs Drain Current
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
-60
V
-160
mA
IDM
-1.6
A
Saturation Characteristics
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
625
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VDS=-10V
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-10
2.4
VGS=-10V
ID=0.37A
2.2
n)
(o
2.0
1.8
1.6
e
eR
rc
ou
S
ain
1.4
1.2
e
nc
ta
sis
Dr
Gate Thresh
old
1.0
0.8
0.6
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BVDSS
-60
Gate-Source Threshold
Voltage
VGS(th)
-1.5
-40 -20
0
S
RD
VGS=VDS
ID=-1mA
Voltage VGS
(TH)
20 40 60 80 100 120 140 160 180
Normalised RDS(on) and VGS(th) vs Temperature
MAX. UNIT CONDITIONS.
V
ID=-1mA, VGS=0V
-3.5
V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-0.5
-50
µA
µA
VDS=-60 V, VGS=0
VDS=-48 V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
mA
VDS=-18 V, VGS=-10V
14
Ω
VGS=-10V,ID=-200mA
mS
VDS=-18V,ID=-200mA
-400
Static Drain-Source On-State RDS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Junction Temperature (°C)
3-430
PARAMETER
ID
Transfer Characteristics
Normalised RDS(on) and VGS(th)
-6V
ABSOLUTE MAXIMUM RATINGS.
Continuous Drain Current at Tamb=25°C
2.6
VGS=-5V
E-Line
TO92 Compatible
Pulsed Drain Current
VGS-Gate Source Voltage (Volts)
100
S
VDS - Drain Source Voltage (Volts)
-0.8
Voltage Saturation Characteristics
-10
-2
-1.0
VGS-Gate Source Voltage (Volts)
RDS(on)-Drain Source On Resistance (Ω)
-6V
-5V
-4.5V
0
-50
-10
D
G
-12V
0
0
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt VDS
* RDS(on)=14Ω
-0.8
0
1
VGS=
-16V
-1.0
-16V
ID - Drain Current (Amps)
ID - Drain Current (Amps)
-1.0
ZVP3306A
gfs
60
Input Capacitance (2)
Ciss
50
pF
Common Source Output
Capacitance (2)
Coss
25
pF
Reverse Transfer
Capacitance (2)
Crss
8
pF
Turn-On Delay Time (2)(3)
td(on)
8
ns
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
td(off)
8
ns
Fall Time (2)(3)
tf
8
ns
VDS=-18V, VGS=0V, f=1MHz
VDD ≈ -18V, ID=-200mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
3-429
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(
3
)
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVP3306A
TYPICAL CHARACTERISTICS
-1.2
VGS=-20V
-14V
-0.8
-12V
-10V
-0.6
-9V
-8V
-0.4
-7V
-6V
-5V
-0.2
-4V
-14V
-10
-20
-30
-40
-0.6
-10V
-0.4
-9V
-8V
-7V
-0.2
VDS - Drain Source Voltage (Volts)
-8
ID=
-6
-400mA
-4
-2
-200mA
0
-100mA
0
-2
-4
-6
-8
-10
ID(On)-On-State Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
Output Characteristics
-4
-6
-8
-10
-7V
-10V
-15V
10
-20V
-100
-1000
ID-Drain Current (mA)
On-resistance vs Drain Current
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
-60
V
-160
mA
IDM
-1.6
A
Saturation Characteristics
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
625
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VDS=-10V
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-10
2.4
VGS=-10V
ID=0.37A
2.2
n)
(o
2.0
1.8
1.6
e
eR
rc
ou
S
ain
1.4
1.2
e
nc
ta
sis
Dr
Gate Thresh
old
1.0
0.8
0.6
PARAMETER
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BVDSS
-60
Gate-Source Threshold
Voltage
VGS(th)
-1.5
-40 -20
0
S
RD
VGS=VDS
ID=-1mA
Voltage VGS
(TH)
20 40 60 80 100 120 140 160 180
Normalised RDS(on) and VGS(th) vs Temperature
MAX. UNIT CONDITIONS.
V
ID=-1mA, VGS=0V
-3.5
V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-0.5
-50
µA
µA
VDS=-60 V, VGS=0
VDS=-48 V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
mA
VDS=-18 V, VGS=-10V
14
Ω
VGS=-10V,ID=-200mA
mS
VDS=-18V,ID=-200mA
-400
Static Drain-Source On-State RDS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Junction Temperature (°C)
3-430
PARAMETER
ID
Transfer Characteristics
Normalised RDS(on) and VGS(th)
-6V
ABSOLUTE MAXIMUM RATINGS.
Continuous Drain Current at Tamb=25°C
2.6
VGS=-5V
E-Line
TO92 Compatible
Pulsed Drain Current
VGS-Gate Source Voltage (Volts)
100
S
VDS - Drain Source Voltage (Volts)
-0.8
Voltage Saturation Characteristics
-10
-2
-1.0
VGS-Gate Source Voltage (Volts)
RDS(on)-Drain Source On Resistance (Ω)
-6V
-5V
-4.5V
0
-50
-10
D
G
-12V
0
0
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt VDS
* RDS(on)=14Ω
-0.8
0
1
VGS=
-16V
-1.0
-16V
ID - Drain Current (Amps)
ID - Drain Current (Amps)
-1.0
ZVP3306A
gfs
60
Input Capacitance (2)
Ciss
50
pF
Common Source Output
Capacitance (2)
Coss
25
pF
Reverse Transfer
Capacitance (2)
Crss
8
pF
Turn-On Delay Time (2)(3)
td(on)
8
ns
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
td(off)
8
ns
Fall Time (2)(3)
tf
8
ns
VDS=-18V, VGS=0V, f=1MHz
VDD ≈ -18V, ID=-200mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
3-429
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(
3
)
ZVP3306A
120
120
100
100
gfs-Transconductance (mS)
gfs-Transconductance (mS)
TYPICAL CHARACTERISTICS
80
Note:VDS=-10V
60
40
20
0
80
Note:VDS=-10V
60
40
20
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
0 -1
Transconductance v drain current
VGS-Gate Source Voltage (Volts)
C-Capacitance (pF)
Note:VGS=0V
f=1MHz
40
Ciss
30
20
Coss
10
Crss
0
0
-10
-20
-30
-40
-3
-4
-5
-6
-7
-8
-9
-10
Transconductance v gate-source voltage
60
50
-2
VGS-Gate Source Voltage (Volts)
ID- Drain Current (Amps)
-50
-60
2
1
Note:ID=- 0.2A
0
-2
VDS=
-20V -40V -60V
-4
-6
-8
-10
-12
-14
-16
0
-70
VDS-Drain Source Voltage (Volts)
0.5
1.0
Q-Gate Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-431
1.5