ZVP3310F FEATURES * 100 Volt VDS * RDS(on)=20Ω COMPLEMENTARY TYPE - S D ZVN3310F G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS Continuous Drain Current at Tamb=25°C ID VALUE UNIT -100 V 75 mA Pulsed Drain Current IDM -1.2 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -100 Gate-Source Threshold Voltage VGS(th) -1.5 MAX. UNIT CONDITIONS. -3.5 V ID=-1mA, VGS=0V V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS -20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -1 -50 µA µA VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125°C On-State Drain Current Curren I D(on) mA VDS=-25 V, VGS 20 Ω VGS=-10V, ID=-150mA mS VDS=-25V, ID=-150mA -300 Static Drain-Source On-State RDS(on) Resistance 50 Forward Transconductance gfs Input Capacitance C iss 50 pF Common Source Output Capacitance Coss 15 pF Reverse Transfer Capacitance Crss 5 pF Turn-On Delay Time td(on) 8 ns Rise Time tr 8 ns Turn-Off Delay Time td(off) 8 ns Fall Time tf 8 ns http://www.twtysemi.com [email protected] VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150mA 4008-318-123 1 of 1