DIODES ZXGD3005E6TA

A Product Line of
Diodes Incorporated
ZXGD3005E6
ADVANCE INFORMATION
25V 10A GATE DRIVER IN SOT26
Description and Applications
Features and Benefits
The ZXGD3005E6 is a high-speed non-inverting single gate driver
capable of driving up to 10A into a MOSFET or IGBT gate capacitive
load from supply voltages up to 25V. With propagation delay times
down to <10ns and correspondingly rise/fall times of <20ns.
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•
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This gate driver ensures rapid switching of the MOSFET or IGBT to
minimize power losses and distortion in high current switching
applications. It is ideally suited to act as a voltage buffer between the
typically high output impedances of a controller IC and the effectively
low impedance on the gate of a power MOSFET or IGBT during
switching. Its low input voltage requirement and high current gain
allows high current driving from low voltage controller ICs.
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•
•
•
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The ZXGD3005E6 has separate source and sink outputs that enables
the turn-on and turn-off times of the MOSFET or IGBT to be
independently controlled. In addition, the wide supply voltage range
allows full enhancement of the MOSFET or IGBT to minimize on-state
losses and permits +15V to -5V gate drive voltage to prevent dV/dt
induced false triggering of IGBTs. The ZXGD3005E6 has been
designed to be inherently rugged to latch-up and shoot-through
issues. The optimized pin-out SOT26 package eases board layout,
enabling reduced parasitic inductance of traces.
Mechanical Data
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Power MOSFET and IGBT Gate Driving in:
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Synchronous switch-mode power supplies
•
Power Factor Correction (PFC) in power supplies
•
Secondary side synchronous rectification
•
Plasma Display Panel power modules
•
1, 2 and 3-phase motor control circuits
•
Audio switching amplifier power output stages
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Solar inverters
SOT26
VCC
Case: SOT26
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.018 grams (approximate)
Source
Do Not Connect
IN
1
Emitter-follower configuration for ultra-fast switching
•
<10ns propagation delay time
•
<20ns rise/fall time
Non-inverting voltage buffer stage
Wide supply voltage up to 25V to minimize on-losses
10A peak current drive into capacitive loads
Low input current of 1mA to deliver 4A output current
Separate source and sink outputs for independent control of rise
and fall time
Optimized pin-out to ease board layout and minimize parasitic
inductance of traces
Rugged design that avoids latch-up or shoot-through issues
Near - Zero quiescent supply current
“Lead-Free”, RoHS Compliant (Note 1)
“Green” Devices (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Sink
VEE
Top View
Pin-Out
Top View
Pin Name
Pin Function
VCC
Supply voltage high
IN
Driver input pin
VEE
Supply voltage low
SOURCE
Source current output
SINK
Sink current output
Ordering Information (Note 3)
Product
ZXGD3005E6TA
Notes:
Marking
3005
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead
2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
3005
ZXGD3005E6
Document Number DS35095 Rev. 4 – 2
3005 = Product Type Marking Code
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A Product Line of
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Typical Application Circuit
VS
VCC
VCC
Controller IC
ADVANCE INFORMATION
ZXGD3005E6
SOURCE RSOURCE
IN
ZXGD3005
SINK
RSINK
VEE
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Supply voltage, with respect to VEE
Input voltage, with respect to VEE
Output difference voltage (Source – Sink)
Peak output current
Input current
Symbol
VCC
VIN
ΔV(source-sink)
IPK
IIN
Value
25
25
±7.5
±10
±100
Unit
V
V
V
A
mA
Value
1.1
8.8
113
105
-55 to +150
Unit
W
mW/°C
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Notes 4 & 5)
Linear derating factor
Thermal Resistance, Junction to Ambient (Notes 4 & 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
RθJL
TJ, TSTG
°C/W
°C
4. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (VCC) and pin 3 (VEE) connected separately to each half.
5. For device with two active die running at equal power.
6. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (VEE).
ZXGD3005E6
Document Number DS35095 Rev. 4 – 2
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ZXGD3005E6
ADVANCE INFORMATION
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Output voltage, high
Output voltage, low
Symbol
VOH
VOL
Supply breakdown voltage
BVCC
Quiescent supply current
IQ
Source current
Sink current
I(source)
I(sink)
Source current
with varying input resistances
Min
25
25
-
Typ
VCC - 0.8
VEE + 0.2
4.0
3.8
Max
VEE + 0.5
50
50
-
Unit
-
6.4
5.5
3.9
2.2
0.44
-
A
-
7.7
6.5
4.4
2.3
0.46
-
A
-
8
48
16
35
-
ns
-
46
419
47
467
-
ns
I(source)
Sink current
with varying input resistances
I(sink)
Switching times
with low load capacitance CL = 10nF
td(rise)
tr
td(fall)
tf
Switching times
with high load capacitance CL = 100nF
td(rise)
tr
td(fall)
tf
Switching times
with asymmetric source and sink resistors
td(rise)
tr
td(fall)
tf
24
133
16
37
V
V
nA
A
ns
Test Condition
VIN = VCC
VIN = VEE
IQ = 100μA, VIN = VCC
IQ = 100μA, VIN = VEE = 0V
VCC= 20V,VIN = VCC
VCC= 20V,VIN = VEE = 0V
VCC= 5V, IIN= 1mA, VOUT= 0V
VCC= 5V, IIN=-1mA, VOUT= 5V
RIN = 200Ω
VCC = 15V, VEE = 0V
RIN = 1kΩ
VIN = 15V
RIN = 10kΩ
CL = 100nF, RL = 0.18Ω
RIN = 100kΩ
RSOURCE = 0Ω, RSINK = 0Ω
RIN = 1000kΩ
RIN = 200Ω
VCC = 15V, VEE = 0V
RIN = 1kΩ
VIN = 15V
RIN = 10kΩ
CL = 100nF, RL = 0.18Ω
RIN = 100kΩ
RSOURCE = 0Ω, RSINK = 0Ω
RIN = 1000kΩ
VCC = 15V, VEE = 0V
VIN = 0 to 15V
RIN = 1kΩ
CL = 10nF, RL = 0.18Ω
RSOURCE = 0Ω, RSINK = 0Ω
VCC = 15V, VEE = 0V
VIN = 0 to 15V
RIN = 1kΩ
CL = 100nF, RL = 0.18Ω
RSOURCE = 0Ω, RSINK = 0Ω
VCC = 15V, VEE = -5V
VIN = -5 to 15V
RIN= 1kΩ
CL = 10nF, RL = 0.18Ω
RSOURCE=4.7Ω, RSINK=0Ω
Switching Test Circuit and Timing Diagram
VCC
90%
VCC
VIN
RIN
50Ω
SOURCE
IN
ZXGD3005
V
RSOURCE
10%
SINK
td(fall)
td(rise)
RSINK
50Ω
VIN
VOUT
CL
90%
VEE
RL
90%
VOUT
10%
10%
tr
ZXGD3005E6
Document Number DS35095 Rev. 4 – 2
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A Product Line of
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Typical Switching Characteristics @TA = 25°C unless otherwise specified
VIN = 0 to 15V
15
VIN = 0 to 15V
15
VCC= 15V
VCC= 15V
VEE= 0V
RIN = 1kΩ
10
CL = 10nF
RL = 0.18Ω
VOUT
RSOURCE= 0Ω
5
RSINK = 0Ω
VIN
Voltage (V)
Voltage (V)
VEE= 0V
RIN = 1kΩ
10
CL = 100nF
RL = 0.18Ω
VOUT
RSOURCE= 0Ω
5
RSINK = 0Ω
VIN
0
0
0
0.0
100 200 300 400 500 600 700 800
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Time (μs)
Time (ns)
Switching Speed
Switching Speed
High Load Capacitance CL = 100nF
Low Load Capacitance CL = 10nF
10
VIN = -5 to 15V
VCC= 15V
VEE= -5V
10
VOUT
5
RIN = 1kΩ
CL = 10nF
RL = 0.18Ω
RSOURCE= 4.7Ω
RSINK = 0Ω
VIN
0
-5
VIN = 0 to 15V
Supply Current (A)
15
Voltage (V)
ADVANCE INFORMATION
ZXGD3005E6
1
CL= 100nF
VCC= 15V
VEE= 0V
0.1
0.01
Square Wave
CL= 1μF
CL= 1nF
1E-3
CL= 10nF
1E-4
0
100 200 300 400 500 600 700 800
10
100
1k
10k
100k
Time (ns)
Frequency (Hz)
Switching Speed
Supply Current
1M
Asymmetric Source and Sink Resistors
ZXGD3005E6
Document Number DS35095 Rev. 4 – 2
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Typical Switching Characteristics @TA = 25°C unless otherwise specified
10
Peak Sink Current (A)
Peak Source Current (A)
10
CL=1uF
1
CL=100nF
VIN = 15V
0.1
CL=10nF
VCC= 15V
VEE= 0V
RL = 0.18Ω
CL=1nF
0.01
1k
10k
100k
1M
CL=1uF
1
CL=100nF
VIN = 15V
0.1
VEE= 0V
RL = 0.18Ω
10M
1k
100k
1M
10M
Sink Current vs. Input Resistance
RIN=1MΩ
RIN=1MΩ
1000
RIN=100kΩ
td(fall) (ns)
td(rise) (ns)
10k
RIN Input Resistance (Ω)
100
RIN=100kΩ
100
10
RIN=200Ω
1
CL=1nF
0.01
RIN Input Resistance (Ω)
1000
CL=10nF
VCC= 15V
Source Current vs. Input Resistance
1
RIN=1kΩ
RIN=10kΩ
V
== 15V
VIN
15V
IN
V
VCC== 15V
15V
VIN = 15V
10
CC
V
== 0V
VEE
0V
EE
R
RL == 0.18
0.18Ω
Ω
RIN=200Ω
L
10
100
1
1k
1
CL Load Capacitance (nF)
10000
RIN=100kΩ
1000
RIN=10kΩ
100
VIN = 15V
RIN=200Ω
10
1
tf (ns)
1000
10
RIN=1kΩ
VCC= 15V
RIN=10kΩ
VEE= 0V
RL = 0.18Ω
10
100
1k
Turn-Off Delay Time
RIN=1MΩ
10000
RIN=1kΩ
CL Load Capacitance (nF)
Turn-On Delay Time
tr (ns)
ADVANCE INFORMATION
ZXGD3005E6
RIN=1MΩ
RIN=100kΩ
100 RIN=10kΩ
VIN = 15V
VCC= 15V
RIN=1kΩ
VEE= 0V
10
RL = 0.18Ω
100
1k
1
RIN=200Ω
10
VCC= 15V
VEE= 0V
RL = 0.18Ω
100
CL Load Capacitance (nF)
CL Load Capacitance (nF)
Turn-On Rise Time
Turn-Off Fall Time
ZXGD3005E6
Document Number DS35095 Rev. 4 – 2
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Application Notes
Independent control of rise and fall time
An application may require the turn-on (ton) and turn-off (toff) time
to be independently controlled, which can be achieved by setting
different RSOURCE and RSINK values. With asymmetric RSOURCE
and RSINK resistors, then a potential difference will occur between
the SOURCE and SINK pins during the switching transition. If the
potential difference across the SOURCE and SINK pins is greater
than 7.5V, then it could damage the ZXGD3005.
In this circuit example of driving an IGBT, a blocking diode is
added in series with RSINK to protect against excess reverse
current being induced into the SINK pin.
Circuit example of driving a MOSFET
Circuit example of driving an IGBT
Application example of gate driving a MOSFET from 0 to 15V with
RSOURCE = RSINK = 0Ω
Application example of gate driving an IGBT with independent ton and
toff using asymmetric RSOURCE and RSINK In addition, the gate is
driven from -5 to +15V to prevent dV/dt induced false triggering.
Switching Time Characteristic
Switching Time Characteristic
VIN = 0 to 15V
15
VCC= 15V
10
CL = 10nF
RL = 0.18Ω
VOUT
RSOURCE= 0Ω
5
RSINK = 0Ω
VIN
Voltage (V)
RIN = 1kΩ
VIN = -5 to 15V
15
VCC= 15V
VEE= 0V
Voltage (V)
ADVANCE INFORMATION
ZXGD3005E6
0
VEE= -5V
10
VOUT
5
RIN = 1kΩ
CL = 10nF
RL = 0.18Ω
RSOURCE= 4.7Ω
VIN
0
RSINK = 0Ω
-5
0
0
100 200 300 400 500 600 700 800
Symmetric Source and Sink Resistors
ZXGD3005E6
Document Number DS35095 Rev. 4 – 2
100 200 300 400 500 600 700 800
Time (ns)
Asymmetric Source and Sink Resistors
Time (ns)
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ADVANCE INFORMATION
ZXGD3005E6
Package Outline Dimensions
A
B C
H
K
M
J
L
D
SOT26
Dim Min Max Typ
A
0.35 0.50 0.38
B
1.50 1.70 1.60
C
2.70 3.00 2.80
D
⎯
⎯ 0.95
H
2.90 3.10 3.00
J
0.013 0.10 0.05
K
1.00 1.30 1.10
L
0.35 0.55 0.40
M
0.10 0.20 0.15
0°
8°
α
⎯
All Dimensions in mm
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C1
2.40
C2
0.95
X
ZXGD3005E6
Document Number DS35095 Rev. 4 – 2
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ADVANCE INFORMATION
ZXGD3005E6
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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ZXGD3005E6
Document Number DS35095 Rev. 4 – 2
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