ZETEX ZXMC3AM832

ZXMC3AM832
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A
P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
3mm x 2mm Dual Die MLP
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
FEATURES
• Low on - resistance
• Fast switching speed
• Low threshold
• Low gate drive
• 3mm x 2mm MLP
APPLICATIONS
• MOSFET gate drive
• LCD backlight inverters
PINOUT
• Motor control
5
6
D2
D2
7
8
D1
D1
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMC3AM832TA
7’‘
8mm
3000 units
ZXMC3AM832TC
13’‘
8mm
10000 units
S2
G2
4
3
S1
G1
2
1
3 x 2 Dual MLP
underside view
DEVICE MARKING
C01
PROVISIONAL ISSUE E - JULY 2004
1
ZXMC3AM832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
N-Channel
P-Channel
UNIT
Drain-Source Voltage
V DSS
30
-30
V
Gate-Source Voltage
V GS
⫾20
⫾20
V
Continuous Drain Current@V GS =10V; T A =25⬚C (b)(f)
@V GS =10V; T A =25⬚C (b)(f)
@V GS =10V; T A =25⬚C (a)(f)
ID
3.7
3.0
2.9
-2.7
-2.2
-2.1
A
A
12.4
-9.2
A
2.4
-2.8
A
Pulsed Drain Current
I DM
Continuous Source Current (Body Diode) (b)(f)
IS
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
8
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
VALUE
UNIT
I SM
12.4
-9.2
A
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)(f)
Junction to Ambient
Junction to Ambient (b)(f)
R θJA
83.3
°C/W
R θJA
51
°C/W
Junction to Ambient (c)(f)
R θJA
125
°C/W
Junction to Ambient (d)(f)
R θJA
111
°C/W
Junction to Ambient (d)(g)
R θJA
73.5
°C/W
Junction to Ambient (e)(g)
R θJA
41.7
°C/W
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PROVISIONAL ISSUE E - JULY 2004
2
ZXMC3AM832
TYPICAL CHARACTERISTICS
RDS(ON)
R
-ID Drain Current (A)
ID Drain Current (A)
10 Limited
1
DC 1s
100ms
100m
10m
1
DC 1s
100ms
100m
10ms
Note (a)(f)
DS(ON)
10 Limited
1ms 100us
Single Pulse, Tamb=25°C
1
10ms
1ms
Note (a)(f)
100us
10m Single Pulse, Tamb=25°C
1
10
VDS Drain-Source Voltage (V)
10
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
Max Power Dissipation (W)
Thermal Resistance (°C/W)
3.5
Note (a)(f)
80
60
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
2.5
1.0
0.5
0.0
0
Thermal Resistance (°C/W)
PD Dissipation (W)
2oz copper
Note (g)
1.5
1.0
1oz copper
Note (f)
0.5
0.0
0.1
1
25
50
75
100
125
150
Derating Curve
2oz copper
Note (f)
2.0
1oz Cu
Note (d)(f)
Temperature (°C)
3.5
2.5
1oz Cu
Note (d)(g)
1.5
Transient Thermal Impedance
3.0
2oz Cu
Note (a)(f)
2.0
Pulse Width (s)
Tamb=25°C
Tj max=150°C
Continuous
2oz Cu
Note (e)(g)
3.0
1oz copper
Note (g)
10
100
Board Cu Area (sqcm)
225
200
175
150
125
100
75
50
25
0
0.1
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (g)
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Power Dissipation v Board Area
PROVISIONAL ISSUE E - JULY 2004
3
ZXMC3AM832
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
TYP.
MAX.
UNIT
CONDITIONS
STATIC
DYNAMIC
V
I D =250µA, V GS =0V
0.5
µA
V DS =30V, V GS =0V
100
nA
V GS =±20V, V DS =0V
V
I =250µA, V DS = V GS
D
Ω
Ω
V GS =10V, I D =2.5A
V GS =4.5V, I D =2.0A
3.5
S
V DS =4.5V,I D =2.5A
1
0.106
0.12
0.18
(3)
Input Capacitance
C iss
190
pF
Output Capacitance
C oss
38
pF
Reverse Transfer Capacitance
C rss
20
pF
Turn-On Delay Time
t d(on)
1.7
ns
Rise Time
tr
2.3
ns
Turn-Off Delay Time
t d(off)
6.6
ns
Fall Time
tf
2.9
ns
Gate Charge
Qg
2.3
nC
Total Gate Charge
Qg
3.9
nC
Gate-Source Charge
Q gs
0.6
nC
Gate-Drain Charge
Q gd
0.9
nC
V SD
0.85
t rr
Q rr
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
V DD =15V, I D =2.5A
R G =6.0Ω, V GS =10V
V DS =15V,V GS =5V,
I D =2.5A
V DS =15V,V GS =10V,
I D =2.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
0.95
V
T J =25°C, I S =1.7A,
V GS =0V
17.7
ns
T J =25°C, I F =2.5A,
di/dt= 100A/µs
13.0
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE E - JULY 2004
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ZXMC3AM832
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
V GS(th)
(1)
Forward Transconductance (1)(3)
V
I D =-250µA, V GS =0V
1
␮A
V DS =-30V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
I =-250␮A, V DS = V GS
D
Ω
Ω
V GS =-10V, I D =-1.4A
V GS =-4.5V, I D =-1.1A
V DS =-15V,I D =-1.4A
-0.8
R DS(on)
0.210
0.330
g fs
2.48
S
Input Capacitance
C iss
204
pF
Output Capacitance
C oss
39.8
pF
Reverse Transfer Capacitance
C rss
25.8
pF
DYNAMIC (3)
SWITCHING
V DS =-15 V, V GS =0V,
f=1MHz
(2) (3)
Turn-On Delay Time
t d(on)
1.5
ns
Rise Time
tr
2.8
ns
Turn-Off Delay Time
t d(off)
11.3
ns
Fall Time
tf
7.5
ns
Gate Charge
Qg
2.58
nC
Total Gate Charge
Qg
5.15
nC
Gate-Source Charge
Q gs
0.65
nC
Gate-Drain Charge
Q gd
0.92
nC
V SD
-0.85
t rr
Q rr
V DD =-15V, I D =-1A
R G =6.0Ω, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-1.4A
V DS =-15V,V GS =-10V,
I D =-1.4A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE E - JULY 2004
5
-0.95
V
T J =25°C, I S =-1.1A,
V GS =0V
18.6
ns
T J =25°C, I F =-0.95A,
di/dt= 100A/µs
14.8
nC
ZXMC3AM832
10V
T = 25°C
10
7V
T = 150°C
5V
4.5V
ID Drain Current (A)
ID Drain Current (A)
N-CHANNEL TYPICAL CHARACTERISTICS
4V
3.5V
1
3V
VGS
0.1
2.5V
0.1
1
5V
1
4V
3.5V
3V
2.5V
VGS
0.1
2V
10
0.1
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
1.6
VDS = 10V
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
7V
4.5V
VDS Drain-Source Voltage (V)
T = 150°C
1
T = 25°C
0.1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
3.5V
4V
1
VGS
5V
7V
0.1
10V
T = 25°C
1
ID Drain Current (A)
VGS = VDS
ID = 250uA
0.6
0.4
-50
0
50
100
150
Normalised Curves v Temperature
4.5V
0.1
VGS(th)
0.8
Tj Junction Temperature (°C)
ISD Reverse Drain Current (A)
3V
RDS(on)
1.2
Typical Transfer Characteristics
2.5V
VGS = 10V
ID = 2.5A
1.4
VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance
10V
10
10
10
T = 150°C
1
T = 25°C
0.1
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
PROVISIONAL ISSUE E - JULY 2004
6
ZXMC3AM832
N-CHANNEL TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
250
VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
200
CISS
150
COSS
CRSS
100
50
0
0.1
1
10
ID = 2.5A
8
6
VDS = 15V
4
2
0
0
1
2
3
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
PROVISIONAL ISSUE E - JULY 2004
7
4
ZXMC3AM832
P-CHANNEL TYPICAL CHARACTERISTICS
10V
T = 25°C
5V
1
2.5V
-VGS
2V
0.1
T = 150°C
10
4V
3.5V
3V
-ID Drain Current (A)
-ID Drain Current (A)
10
0.01
10V
5V
4V
3.5V
3V
2.5V
1
2V
0.1
-VGS
1.5V
0.01
0.1
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
T = 25°C
0.1
1
RDS(on) Drain-Source On-Resistance (Ω)
Normalised RDS(on) and VGS(th)
T = 150°C
1
100
-VDS = 10V
2
3
4
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
2V
T = 25°C
-VGS
2.5V
10
3V
3.5V
4V
1
5V
10V
0.1
VGS = -10V
ID = -1.4A
1.4
0.6
-50
5
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
1.6
0.1
1
10
T = 150°C
1
T = 25°C
0.1
0.01
0.2
10
-ID Drain Current (A)
On-Resistance v Drain Current
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
1.4
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE E - JULY 2004
8
ZXMC3AM832
P-CHANNEL TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
250
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
200
150
CISS
COSS
100
CRSS
50
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ID = -1.4A
8
6
4
2
VDS = -15V
0
0
2
4
6
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE E - JULY 2004
9
ZXMC3AM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
Millimeters
DIM
Inches
Millimeters
Min
Max
Min
Max
DIM
Min
Max
Inches
Min
Max
A
0.80
1.00
0.0315
0.0394
e
0.65 BSC
0.0256 BSC
A1
0.00
0.05
0.00
0.002
E
2.00 BSC
0.0787 BSC
A2
0.65
0.75
0.0256
0.0295
E2
0.43
0.63
0.017
0.0248
A3
0.15
0.25
0.006
0.0098
L
0.20
0.45
0.0079
0.0177
b
0.24
0.34
0.0095
0.0134
L2
0.00
0.125
0.00
0.005
b1
0.17
0.30
0.0068
0.0118
D
3.00 BSC
0.118 BSC
r
0.075 BSC
0.0029 BSC
⍜
0⬚
12⬚
0⬚
12⬚
D2
0.82
1.02
0.0323
0.0402
-
-
-
-
-
D3
1.01
1.21
0.0398
0.0476
-
-
-
-
-
© Zetex Semiconductors plc 2004
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PROVISIONAL ISSUE E - JULY 2004
10