ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting Q1 = N-CHANNEL Q2 = P-CHANNEL ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMC4559DN8TA 7’‘ 12mm 500 units ZXMC4559DN8TC 13’‘ 12mm 2500 units PINOUT DEVICE MARKING • ZXMC 4559 Top view ISSUE 5 - MAY 2005 1 SEMICONDUCTORS ZXMC4559DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage V DSS 60 -60 V Gate-Source Voltage Continuous Drain Current @V GS =10V; T A =25⬚C (b) (d) V GS ⫾20 ⫾20 V ID 4.7 -3.9 A @V GS =10V; T A =25⬚C (b) (d) 3.7 -2.8 A @V GS =10V; T A =25⬚C (a) (d) 3.6 -2.6 A Pulsed Drain Current (c) I DM 22.2 -18.3 A Continuous Source Current (Body Diode) (b) IS 3.4 -3.2 A Pulsed Source Current (Body Diode)(c) I SM 22.2 Power Dissipation at TA=25°C (a) (d) Linear Derating Factor PD 1.25 W 10 mW/°C Power Dissipation at TA=25°C (a) (e) Linear Derating Factor PD 1.8 W 14 mW/°C Power Dissipation at TA=25°C (b) (d) Linear Derating Factor PD 2.1 W 17 mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C -18.3 A THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) (d) R ⍜JA VALUE 100 UNIT °C/W Junction to Ambient (b) (e) R ⍜JA 69 °C/W Junction to Ambient (b) (d) R ⍜JA 58 °C/W Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For device with 2 active die running at equal power. ISSUE 5 - MAY 2005 SEMICONDUCTORS 2 ZXMC4559DN8 CHARACTERISTICS ISSUE 5 - MAY 2005 3 SEMICONDUCTORS ZXMC4559DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. V (BR)DSS 60 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V I D =250A, V GS =0V V DS =60V, V GS =0V Zero Gate Voltage Drain Current I DSS 1.0 A Gate-Body Leakage I GSS 100 nA V GS =⫾20V, V DS =0V Gate-Source Threshold Voltage V GS(th) V Static Drain-Source On-State R DS(on) I =250A, V DS = V GS D V GS =10V, I D =4.5A 1.0 Resistance (1) (1) (3) 0.055 ⍀ 0.075 ⍀ g fs 10.2 S Input Capacitance C iss 1063 pF Output Capacitance C oss 104 pF C rss 64 pF ns Forward Transconductance DYNAMIC (3) Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.5 Rise Time tr 4.1 ns Turn-Off Delay Time t d(off) 26.2 ns Fall Time tf 10.6 ns Gate Charge Qg 11.0 nC V GS =4.5V, I D =4.0A V DS =15V,I D =4.5A V DS =30V, V GS =0V, f=1MHz V DD =30V, I D =1A R G ≅6.0⍀, V GS =10V V DS =30V,V GS =5V, I D =4.5A Total Gate Charge Qg 20.4 nC Gate-Source Charge Q gs 4.1 nC V DS =30V,V GS =10V, Q gd 5.1 nC I D =4.5A V SD 0.85 Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) 1.2 V T J =25°C, I S =5.5A, V GS =0V Reverse Recovery Time (3) t rr 22 ns T J =25°C, I F =2.2A, Reverse Recovery Charge (3) Q rr 21.4 nC di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width ⱕ300s. Duty cycle ⱕ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 5 - MAY 2005 SEMICONDUCTORS 4 ZXMC4559DN8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. V (BR)DSS -60 TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V I D =-250A, V GS =0V V DS =-60V, V GS =0V Zero Gate Voltage Drain Current I DSS -1.0 A Gate-Body Leakage I GSS 100 nA V GS =⫾20V, V DS =0V Gate-Source Threshold Voltage V GS(th) V Static Drain-Source On-State R DS(on) I =-250A, V DS = V GS D V GS =-10V, I D =-2.9A -1.0 0.085 Resistance (1) Forward Transconductance DYNAMIC (3) 0.125 (1) (3) ⍀ ⍀ g fs 7.2 S Input Capacitance C iss 1021 pF Output Capacitance C oss 83.1 pF Reverse Transfer Capacitance C rss 56.4 pF ns V GS =-4.5V, I D =-2.4A V DS =-15V,I D =-2.9A V DS =-30 V, V GS =0V, f=1MHz SWITCHING (2) (3) Turn-On Delay Time t d(on) 3.5 Rise Time tr 4.1 ns V DD =-30V, I D =-1A Turn-Off Delay Time t d(off) 35 ns R G 6.0⍀, V GS =-10V Fall Time tf Gate Charge Qg 10 ns 12.1 nC V DS =-30V,V GS =-5V, I D =-2.9A Total Gate Charge Qg 24.2 nC Gate-Source Charge Q gs 2.5 nC Gate-Drain Charge Q gd 3.7 nC V SD -0.85 V DS =-30V,V GS =-10V, I D =-2.9A SOURCE-DRAIN DIODE Diode Forward Voltage (1) -0.95 V T J =25°C, I S =-3.4A, V GS =0V Reverse Recovery Time (3) t rr 29.2 ns Reverse Recovery Charge (3) Q rr 39.6 nC T J =25°C, I F =-2A, di/dt= 100A/µs NOTES (1) Measured under pulsed conditions. Width ⱕ300s. Duty cycle ⱕ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 5 - MAY 2005 5 SEMICONDUCTORS ZXMC4559DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 150°C 4.5V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 4V 3.5V 1 3V 0.1 VGS 2.5V 0.01 0.1 1 4.5V 10V 10 4V 3.5V 1 3V 2.5V 0.1 VGS 2V 0.01 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.4 Normalised RDS(on) and VGS(th) ID Drain Current (A) 10 T = 150°C 1 T = 25°C 0.1 VDS = 10V 0.01 2 3 4 RDS(on) 1.0 0.8 50 100 150 Normalised Curves v Temperature T = 25°C ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) 0 Tj Junction Temperature (°C) 100 2.5V VGS 100 3V 3.5V 10 4V 4.5V 1 10V 0.1 0.01 VGS = VDS ID = 250uA 0.4 -50 5 Typical Transfer Characteristics 0.01 VGS(th) 0.6 VGS Gate-Source Voltage (V) 1000 VGS = 10V ID = 4.5A 1.2 0.1 1 T = 150°C 10 0.1 0.01 0.2 10 ID Drain Current (A) T = 25°C 1 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage On-Resistance v Drain Current ISSUE 5 - MAY 2005 SEMICONDUCTORS 6 ZXMC4559DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10 1600 C Capacitance (pF) VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz 1400 1200 1000 CISS 800 COSS 600 CRSS 400 200 0 0.1 1 10 VDS - Drain - Source Voltage (V) ID = 4.5A 8 6 4 2 VDS = 30V 0 0 5 10 15 20 25 Q - Charge (nC) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage ISSUE 5 - MAY 2005 7 SEMICONDUCTORS ZXMC4559DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 5 - MAY 2005 SEMICONDUCTORS 8 ZXMC4559DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 5 - MAY 2005 9 SEMICONDUCTORS ZXMC4559DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES ⍜ L H E Pin 1 c A A1 e MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e Seating Plane b MILLIMETRES DIM D CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.50 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 5 - MAY 2005 SEMICONDUCTORS 10