DIODES ZXMHC10A07T8

ZXMHC10A07T8
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A
P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
SM8
S1
S4
• Low on-resistance
G1
• Fast switching speed
G4
• Low threshold
• Low gate drive
D1, D2
D3, D4
• Single SM-8 Surface Mount Package
APPLICATIONS
G3
G2
• Single Phase DC Fan Motor Drive
S2
PINOUT
ORDERING INFORMATION
DEVICE
S3
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMHC10A07T8TA
7”
12mm
1000 units
ZXMHC10A07T8TC
13”
12mm
4000 units
DEVICE MARKING
• ZXMH
C10A7
ISSUE 2 - JUNE 2005
1
SEMICONDUCTORS
ZXMHC10A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
N-channel
P-channel
UNIT
V
Drain-Source Voltage
V DSS
100
-100
Gate-Source Voltage
V GS
⫾20
⫾20
V
Continuous Drain Current @ V GS =10V; T A =25°C (b) (d)
@ V GS =10V; T A =70°C (b) (d)
@ V GS =10V; T A =25°C (a) (d)
ID
1.1
-0.9
A
0.9
-0.8
A
1.0
-0.8
A
(c)
I DM
5.2
-4.5
A
Continuous Source Current (Body Diode) (b)
IS
2.3
-2.2
A
Pulsed Source Current (Body Diode) (c)
I SM
5.2
-4.5
Power Dissipation at T A =25°C (a) (d)
Linear Derating Factor
PD
(b) (d)
PD
Pulsed Drain Current
Power Dissipation at T A =25°C
Linear Derating Factor
T j , T stg
Operating and Storage Temperature Range
A
1.3
W
10.4
mW/°C
1.3
W
10.4
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a) (d)
Junction to Ambient (b) (d)
Junction to Ambient
VALUE
UNIT
R ⍜JA
94.5
°C/W
R ⍜JA
73.3
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with
the heat sink split into two equal areas one for each drain connection.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300␮s - pulse width limited by maximum junction temperature.
Refer to transiennt thermal impedance graph.
(d) For device with one active die.
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
2
ZXMHC10A07T8
TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2005
3
SEMICONDUCTORS
ZXMHC10A07T8
N-Channel
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
100
Zero Gate Voltage Drain Current
I DSS
TYP.
MAX. UNIT CONDITIONS
STATIC
V
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (1) (3)
g fs
1.6
DYNAMIC
2.0
1
␮A
I D = 250␮A, V GS =0V
V DS =100V, V GS =0V
100
nA
V GS =±20V, V DS =0V
4.0
V
I D = 250␮A, V DS =V GS
0.7
⍀
0.9
⍀
V GS = 10V, I D = 1.5A
V GS = 6V, I D = 1.0A
S
V DS = 15V, I D = 1.0A
(3)
Input Capacitance
C iss
138
pF
Output Capacitance
C oss
12
pF
Reverse Transfer Capacitance
SWITCHING (2) (3)
C rss
6
pF
V DS = 60V, V GS =0V
f=1MHz
Turn-On-Delay Time
t d(on)
1.8
ns
Rise Time
tr
1.5
ns
V DD = 50V, I D = 1.0A
Turn-Off Delay Time
t d(off)
4.1
ns
R G ≅ 6.0⍀, V GS = 10V
Fall Time
tf
2.1
ns
Total Gate Charge
Qg
2.9
nC
Gate-Source Charge
Q gs
0.7
nC
Gate Drain Charge
Q gd
1.0
nC
V DS = 50V, V GS = 10V
I D = 1.0A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
0.95
V
T j =25°C, I S = 1.5A,
V GS =0V
27
ns
T j =25°C, I S = 1.8A,
12
nC
di/dt=100A/␮s
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
4
ZXMHC10A07T8
P-Channel
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-100
Zero Gate Voltage Drain Current
I DSS
TYP.
MAX. UNIT CONDITIONS
STATIC
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (1) (3)
g fs
DYNAMIC
V
-2.0
-1.0
␮A
I D = -250␮A, V GS =0V
V DS = -100V, V GS =0V
100
nA
-4.0
V
I D = -250␮A, V DS =V GS
1
⍀
1.45
⍀
V GS = -10V, I D = - 0.6A
V GS = -6V, I D = -0.5A
S
V DS = -15V, I D = -0.6A
1.2
V GS =±20V, V DS =0V
(3)
Input Capacitance
C iss
141
pF
Output Capacitance
C oss
13.1
pF
Reverse Transfer Capacitance
C rss
10.8
pF
V DS = -50V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
t d(on)
1.6
ns
Rise Time
tr
2.1
ns
V DD = -50V, I D = -1A
Turn-Off Delay Time
t d(off)
5.9
ns
R G ≅ 6.0⍀, V GS = -10V
Fall Time
tf
3.3
ns
Gate Charge
Qg
1.6
nC
Total Gate Charge
Qg
3.5
nC
Gate-Source Charge
Q gs
0.6
nC
Gate Drain Charge
Q gd
1.6
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DS = -50V, V GS = -5V
I D = -0.6A
V DS = -50V, V GS = -10V
I D = -0.6A
SOURCE-DRAIN DIODE
-0.95
V
T j =25°C, I S = -0.75A,
29
ns
31
nC
T j =25°C, I S = -0.9A,
di/dt=100A/␮s
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2005
5
SEMICONDUCTORS
ZXMHC10A07T8
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
6
ZXMHC10A07T8
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2005
7
SEMICONDUCTORS
ZXMHC10A07T8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
8
ZXMHC10A07T8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2005
9
SEMICONDUCTORS
ZXMHC10A07T8
PACKAGE DIMENSIONS
PACKAGE OUTLINE
DIM
Millimetres
MIN
Inches
TYP MAX
TYP
MAX
–
–
0.067
0.0008
–
0.004
–
0.028
–
0.32
0.009
–
0.013
–
6.7
0.248
–
0.264
–
3.7
0.130
–
0.145
–
–
0.180
–
A
–
–
1.7
A1
0.02
–
0.1
b
–
0.7
–
c
0.24
–
D
6.3
E
3.3
e1
MIN
–
4.59
e2
–
1.53
–
–
0.060
–
He
6.7
–
7.3
0.264
–
0.287
Lp
0.9
–
–
0.035
–
–
α
–
–
15°
–
–
15°
β
–
10°
–
–
10°
–
Controlling dimensions are in millimetres. Approximate conversions are given in inches
© Zetex Semiconductors plc 2005
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For the latest product information, log on to www.zetex.com
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
10