ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SM8 S1 S4 • Low on-resistance G1 • Fast switching speed G4 • Low threshold • Low gate drive D1, D2 D3, D4 • Single SM-8 Surface Mount Package APPLICATIONS G3 G2 • Single Phase DC Fan Motor Drive S2 PINOUT ORDERING INFORMATION DEVICE S3 REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHC10A07T8TA 7” 12mm 1000 units ZXMHC10A07T8TC 13” 12mm 4000 units DEVICE MARKING • ZXMH C10A7 ISSUE 2 - JUNE 2005 1 SEMICONDUCTORS ZXMHC10A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-channel P-channel UNIT V Drain-Source Voltage V DSS 100 -100 Gate-Source Voltage V GS ⫾20 ⫾20 V Continuous Drain Current @ V GS =10V; T A =25°C (b) (d) @ V GS =10V; T A =70°C (b) (d) @ V GS =10V; T A =25°C (a) (d) ID 1.1 -0.9 A 0.9 -0.8 A 1.0 -0.8 A (c) I DM 5.2 -4.5 A Continuous Source Current (Body Diode) (b) IS 2.3 -2.2 A Pulsed Source Current (Body Diode) (c) I SM 5.2 -4.5 Power Dissipation at T A =25°C (a) (d) Linear Derating Factor PD (b) (d) PD Pulsed Drain Current Power Dissipation at T A =25°C Linear Derating Factor T j , T stg Operating and Storage Temperature Range A 1.3 W 10.4 mW/°C 1.3 W 10.4 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL (a) (d) Junction to Ambient (b) (d) Junction to Ambient VALUE UNIT R ⍜JA 94.5 °C/W R ⍜JA 73.3 °C/W NOTES (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink split into two equal areas one for each drain connection. (b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300s - pulse width limited by maximum junction temperature. Refer to transiennt thermal impedance graph. (d) For device with one active die. ISSUE 2 - JUNE 2005 SEMICONDUCTORS 2 ZXMHC10A07T8 TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 3 SEMICONDUCTORS ZXMHC10A07T8 N-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 100 Zero Gate Voltage Drain Current I DSS TYP. MAX. UNIT CONDITIONS STATIC V Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1) (3) g fs 1.6 DYNAMIC 2.0 1 A I D = 250A, V GS =0V V DS =100V, V GS =0V 100 nA V GS =±20V, V DS =0V 4.0 V I D = 250A, V DS =V GS 0.7 ⍀ 0.9 ⍀ V GS = 10V, I D = 1.5A V GS = 6V, I D = 1.0A S V DS = 15V, I D = 1.0A (3) Input Capacitance C iss 138 pF Output Capacitance C oss 12 pF Reverse Transfer Capacitance SWITCHING (2) (3) C rss 6 pF V DS = 60V, V GS =0V f=1MHz Turn-On-Delay Time t d(on) 1.8 ns Rise Time tr 1.5 ns V DD = 50V, I D = 1.0A Turn-Off Delay Time t d(off) 4.1 ns R G ≅ 6.0⍀, V GS = 10V Fall Time tf 2.1 ns Total Gate Charge Qg 2.9 nC Gate-Source Charge Q gs 0.7 nC Gate Drain Charge Q gd 1.0 nC V DS = 50V, V GS = 10V I D = 1.0A SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr 0.95 V T j =25°C, I S = 1.5A, V GS =0V 27 ns T j =25°C, I S = 1.8A, 12 nC di/dt=100A/s NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JUNE 2005 SEMICONDUCTORS 4 ZXMHC10A07T8 P-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -100 Zero Gate Voltage Drain Current I DSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1) (3) g fs DYNAMIC V -2.0 -1.0 A I D = -250A, V GS =0V V DS = -100V, V GS =0V 100 nA -4.0 V I D = -250A, V DS =V GS 1 ⍀ 1.45 ⍀ V GS = -10V, I D = - 0.6A V GS = -6V, I D = -0.5A S V DS = -15V, I D = -0.6A 1.2 V GS =±20V, V DS =0V (3) Input Capacitance C iss 141 pF Output Capacitance C oss 13.1 pF Reverse Transfer Capacitance C rss 10.8 pF V DS = -50V, V GS =0V f=1MHz SWITCHING (2) (3) Turn-On-Delay Time t d(on) 1.6 ns Rise Time tr 2.1 ns V DD = -50V, I D = -1A Turn-Off Delay Time t d(off) 5.9 ns R G ≅ 6.0⍀, V GS = -10V Fall Time tf 3.3 ns Gate Charge Qg 1.6 nC Total Gate Charge Qg 3.5 nC Gate-Source Charge Q gs 0.6 nC Gate Drain Charge Q gd 1.6 nC Diode Forward Voltage (1) V SD -0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DS = -50V, V GS = -5V I D = -0.6A V DS = -50V, V GS = -10V I D = -0.6A SOURCE-DRAIN DIODE -0.95 V T j =25°C, I S = -0.75A, 29 ns 31 nC T j =25°C, I S = -0.9A, di/dt=100A/s V GS =0V NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JUNE 2005 5 SEMICONDUCTORS ZXMHC10A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 SEMICONDUCTORS 6 ZXMHC10A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 7 SEMICONDUCTORS ZXMHC10A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 SEMICONDUCTORS 8 ZXMHC10A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 9 SEMICONDUCTORS ZXMHC10A07T8 PACKAGE DIMENSIONS PACKAGE OUTLINE DIM Millimetres MIN Inches TYP MAX TYP MAX – – 0.067 0.0008 – 0.004 – 0.028 – 0.32 0.009 – 0.013 – 6.7 0.248 – 0.264 – 3.7 0.130 – 0.145 – – 0.180 – A – – 1.7 A1 0.02 – 0.1 b – 0.7 – c 0.24 – D 6.3 E 3.3 e1 MIN – 4.59 e2 – 1.53 – – 0.060 – He 6.7 – 7.3 0.264 – 0.287 Lp 0.9 – – 0.035 – – α – – 15° – – 15° β – 10° – – 10° – Controlling dimensions are in millimetres. Approximate conversions are given in inches © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JUNE 2005 SEMICONDUCTORS 10