ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES SOT23 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC-DC converters • Power Management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN10A07FTA 7” 8mm 3000 units ZXMN10A07FTC 13” 8mm 10000 units PINOUT DEVICE MARKING • 7N1 Top View ISSUE 5 - JULY 2003 1 SEMICONDUCTORS ZXMN10A07F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS Gate-Source Voltage V GS LIMIT UNIT 100 V 20 V Continuous Drain Current @ V GS =10V; T A =25°C (b) I D @ V GS =10V; T A =70°C (b) @ V GS =10V; T A =25°C (a) 0.8 0.6 0.7 A Pulsed Drain Current (c) I DM 3.5 A A (b) IS 0.5 Pulsed Source Current (Body Diode) (c) I SM 3.5 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j ;T stg -55 to +150 °C VALUE UNIT Continuous Source Current (Body Diode) THERMAL RESISTANCE PARAMETER SYMBOL (a) R ⍜JA 200 °C/W Junction to Ambient (b) R ⍜JA 155 °C/W Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 5 - JULY 2003 SEMICONDUCTORS 2 ZXMN10A07F CHARACTERISTICS ISSUE 5 - JULY 2003 3 SEMICONDUCTORS ZXMN10A07F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. 100 TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS V I D =250A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 A Gate-Body Leakage I GSS 100 nA V DS =100V, V GS =0V V GS =±20V, V DS =0V Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1) (3) g fs 2.0 4.0 V I =250A, V DS =V GS 0.7 0.9 ⍀ ⍀ V GS =10V, I D =1.5A V GS =6V, I D =1A 1.6 S V DS =15V,I D =1A D DYNAMIC (3) Input Capacitance C iss 138 pF Output Capacitance C oss 12 pF Reverse Transfer Capacitance C rss 6 pF V DS =50 V, V GS =0V, f=1MHz SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.8 ns Rise Time tr 1.5 ns Turn-Off Delay Time t d(off) 4.1 ns Fall Time tf 2.1 ns Total Gate Charge Qg 2.9 nC Gate-Source Charge Q gs 0.7 nC Gate-Drain Charge Q gd 1 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =50V, I D =1A R G =6.0⍀, V GS =10V V DS =50V,V GS =10V, I D =1A SOURCE-DRAIN DIODE 0.95 V T j =25°C, I S =1.5A, V GS =0V 27 ns 12 nC T j =25°C, I S =1.8A, di/dt=100A/µs NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300µs; duty cycle ⱕ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 5 - JULY 2003 SEMICONDUCTORS 4 ZXMN10A07F TYPICAL CHARACTERISTICS ISSUE 5 - JULY 2003 5 SEMICONDUCTORS ZXMN10A07F TYPICAL CHARACTERISTICS ISSUE 5 - JULY 2003 SEMICONDUCTORS 6 ZXMN10A07F PACKAGE OUTLINE PAD LAYOUT CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MIN MAX MIN MAX A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 MILLIMETRES DIM INCHES MIN MAX MIN MAX H 0.33 0.51 0.013 0.020 K 0.01 0.10 0.0004 0.004 C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM 10⬚ TYP 10⬚ TYP G 1.90 NOM 0.075 NOM © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 5 - JULY 2003 7 SEMICONDUCTORS