Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance achievable with low gate drive. Features • Low on-resistance • Low gate drive capability • SOT23-6 (dual) package Applications • Power Management functions • Disconnect switches • Relay driving and load switching Ordering information Device ZXMN2088DE6TA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 G1 S2 G2 D1 S1 D2 Pinout – top view Device marking 2088 Issue 2 - June 2008 © Diodes Incorporated 2008 1 www.zetex.com www.diodes.com ZXMN2088DE6 Absolute maximum ratings Parameter Symbol Limit Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGS ±8 V ID 2.1 A Continuous Drain current @ VGS= 4.5V; TA=25°C (b) (d) @ VGS= 4.5V; TA=70°C (b) (d) 1.7 @ VGS= 4.5V; TA=25°C (a) (d) 1.7 Pulsed Drain current (c) IDM 8 A Power dissipation at TA =25°C (a) (d) PD 0.9 W 7.2 mW/°C 1.1 W 8.8 mW/°C 1.3 W 10.4 mW/°C -55 to +150 °C Linear derating factor Power dissipation at TA =25°C (a) (e) PD Linear derating factor Power dissipation at TA =25°C (b) (d) PD Linear derating factor Operating and storage temperature range Tj, Tstg Thermal resistance Parameter Symbol Value Unit Junction to Ambient (a) (d) RθJA 139 °C/W Junction to Ambient (a) (e) RθJA 113 °C/W Junction to Ambient (b) (d) RθJA 96 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t ≤ 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power. Issue 2 – June 2008 © Diodes Incorporated 2008 2 www.zetex.com www.diodes.com ZXMN2088DE6 Thermal Characteristics 10 1.2 Max Power Dissipation (W) ID Drain Current (A) RDS(on) Limited 1 DC 1s 100m 10m 100ms 10ms Single Pulse T amb=25°C 1ms 100µs 1 Die Active (a)(d) 1 10 VDS Drain-Source Voltage (V) 2 Die Active (a)(e) 1.0 0.8 0.6 1 Die Active (a)(d) 0.4 0.2 0.0 0 20 Safe Operating Area 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 120 T amb=25°C Maximum Power (W) Thermal Resistance (°C/W) 140 100 80 D=0.5 1 Die Active (a)(d) 60 40 D=0.2 D=0.1 D=0.05 20 0 100µ Single Pulse 1m 10m 100m 1 Pulse Width (s) 10 100 1k © Diodes Incorporated 2008 Single Pulse T amb=25°C 1 Die Active (a)(d) 10 1 100µ Transient Thermal Impedance Issue 2 – June 2008 100 1m 10m 100m 1 10 Pulse Width (s) 100 1k Pulse Power Dissipation 3 www.zetex.com www.diodes.com ZXMN2088DE6 Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. Drain-Source breakdown voltage V(BR)DSS 20 Zero gate voltage drain current IDSS Zero gate voltage drain current Typ. Max. Unit Conditions Static V ID= 250μA, VGS=0V 100 nA VDS= 3V, VGS=0V IDSS 1 μA VDS= 20V, VGS=0V Gate-Body leakage IGSS 100 nA VGS=±8V, VDS=0V Gate-Source threshold voltage VGS(th) 1.0 V ID= 250μA, VDS=VGS Static Drain-Source on-state resistance (*) RDS(on) 112 0.200 Ω VGS= 4.5V, ID= 1.0A 137 0.240 Ω VGS= 2.5V, ID= 0.6A 165 0.310 Ω VGS= 1.8V, ID= 0.3A Forward transconductance (*) (‡) 0.4 gfs 4.6 S VDS= 10V, ID= 1.0A Input capacitance Ciss 279 pF VDS= 10V, VGS=0V Output capacitance Coss 52 pF f=1MHz Reverse transfer capacitance Crss 29 pF Turn-on-delay time td(on) 2 ns VDD= 10V,VGS=4.5V Rise time tr 3.2 ns ID= 1A Turn-off delay time td(off) 12.7 ns RG ≈ 6.0Ω Fall time tf 6.2 ns Total Gate charge Qg 3.8 nC VDS= 10V, Gate-Source charge Qgs 0.41 nC VGS= 4.5V Gate Drain charge Qgd 0.56 nC ID= 2.4A Diode forward voltage (‡) VSD 0.75 Reverse recovery time trr Reverse recovery charge Qrr Dynamic (‡) Switching (†) (‡) Gate Charge Source-drain diode 0.95 V Tj=25°C, IS= 1.0A, VGS=0V 6.6 ns Tj = 25°C, 1.6 nC IF = 1.24A di/dt = 100A/µs NOTES: ( ) * Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 2 – June 2008 © Diodes Incorporated 2008 4 www.zetex.com www.diodes.com ZXMN2088DE6 Typical Characteristics 10V 4.5V 10 2.5V 2V 1.5V 1 1V VGS 0.1 0.1 1 1 1V VGS 0.1 0.5V VDS Drain-Source Voltage (V) 0.1 1 Output Characteristics ID Drain Current (A) 1 T = 150°C T = 25°C 1E-3 0.4 0.6 0.8 1.0 VGS Gate-Source Voltage (V) 1.2 VGS = 4.5V 1.4 ID = 1A 1.2 RDS(on) 1.0 0.8 VGS(th) 0.6 VGS = VDS 0.4 ID = 250uA 0.2 -50 0 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature Typical Transfer Characteristics 1 VGS 1V ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) Normalised RDS(on) and VGS(th) 1.6 VDS = 10V 0.01 10 VDS Drain-Source Voltage (V) Output Characteristics 0.1 2.5V 1.5V 0.01 10 4.5V 10V T = 150°C 2V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 1.5V T = 25°C 2V 2.5V 3V 3.5V 4.5V 10V 0.1 0.1 1 10 ID Drain Current (A) © Diodes Incorporated 2008 T = 150°C 1 T = 25°C 0.1 VGS = -3V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance v Drain Current Issue 2 – June 2008 10 5 1.4 www.zetex.com www.diodes.com CISS 400 VGS = 0V VGS Gate-Source Voltage (V) C Capacitance (pF) ZXMN2088DE6 f = 1MHz COSS 200 CRSS 0 0.1 1 10 ID = 1A 4 3 2 1 0 VDS = 10V 0 1 2 3 Q - Charge (nC) Gate-Source Voltage v Gate Charge VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 4 Test Circuits Issue 2 – June 2008 © Diodes Incorporated 2008 6 www.zetex.com www.diodes.com ZXMN2088DE6 Packaging details – SOT236 Issue 2 – June 2008 © Diodes Incorporated 2008 7 www.zetex.com www.diodes.com ZXMN2088DE6 Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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