A Product Line of Diodes Incorporated ZXMN2AMC 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS(on) max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS= 4.5V 3.7A 300mΩ @ VGS= 2.5V 2.3A 20V Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • • • • • DC-DC Converters Power management functions Disconnect switches Portable applications DFN3020B-8 D2 D2 Top View Case: DFN3020B-8 Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) D1 S2 G1 G1 D2 G2 S1 S1 Bottom View Pin-Out Bottom View D1 D1 D1 D2 G2 Low profile package, for thin applications Low Rthj-a, thermally efficient package 2 6mm footprint, 50% smaller than TSOP6 and SOT23-6 Low on-resistance Fast switching speed “Lead-Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Pin 1 S2 Equivalent Circuit Ordering Information (Note 3) Part Number ZXMN2AMCTA Notes: Marking DNA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DNA ZXMN2AMC Document number: DS35089 Rev. 1 - 2 DNA = Product Type Marking Code Top View, Dot Denotes Pin 1 1 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN2AMC Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 4.5V Pulsed Drain Current VGS = 4.5V Continuous Source Current (Body diode) Pulse Source Current (Body diode) (Notes 4 & 7) TA = 70°C (Notes 4 & 7) (Notes 3 & 7) (Notes 6 & 7) (Notes 4 & 7) (Notes 6 & 7) ID IDM IS ISM Value 20 ±12 3.7 3.0 2.9 13 3.0 13 Unit Value 1.50 12 2.45 19.6 1.13 9 1.70 13.6 83.3 51.0 111 73.5 17.1 -55 to +150 Unit V A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 3 & 7) Power Dissipation Linear Derating Factor (Notes 4 & 7) PD (Notes 5 & 7) (Notes 5 & 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 3 & 7) (Notes 4 & 7) (Notes 5 & 7) (Notes 5 & 8) (Notes 7 & 9) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 3. For a device surface mounted on 28mm x 28mm (8 sq cm) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half. 4. Same as note (3) except the device is measured at t < 5 sec. 5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10 sq cm) FR4 PCB with high coverage of single sided 1oz copper. 6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMN2AMC Document number: DS35089 Rev. 1 - 2 2 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN2AMC RDS(on) Limited 10 ID Drain Current (A) Max Power Dissipation (W) Thermal Characteristics 1 DC 1s 100ms 100m 10m 10ms 8 sq cm 2oz Cu One active die Single Pulse, Tamb=25°C 1ms 100us 1 10 2.0 10 sq cm 1oz Cu Two active die 1.5 8 sq cm 2oz Cu One active die 10 sq cm 1oz Cu One active die 1.0 0.5 0.0 0 VDS Drain-Source Voltage (V) 25 50 75 100 125 150 Temperature (°C) Derating Curve Safe Operating Area 225 Thermal Resistance (°C/W) 80 Thermal Resistance (°C/W) 8 sq cm 2oz Cu One active die 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 200 1oz Cu One active die 175 1oz Cu Two active die 150 125 100 75 50 2oz Cu One active die 2oz Cu Two active die 25 1k Pulse Width (s) 0 0.1 1 10 100 Board Cu Area (sqcm) Transient Thermal Impedance Thermal Resistance v Board Area 3.5 PD Dissipation (W) 3.0 2.5 2.0 2oz Cu Two active die T amb=25°C T j max=150°C Continuous 2oz Cu One active die 1.5 1.0 0.5 1oz Cu One active die 0.0 0.1 1 1oz Cu Two active die 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ZXMN2AMC Document number: DS35089 Rev. 1 - 2 3 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN2AMC Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.7 RDS (ON) - gfs VSD trr Qrr - 3.0 0.120 0.300 0.95 - V Static Drain-Source On-Resistance (Note 10) 0.085 0.140 6.2 0.9 23 5.7 S V ns nC ID = 250μA, VDS = VGS VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 1.5A VDS = 10V, ID = 4A IS = 3.2A, VGS = 0V Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 299 60 33 0.8 3.1 0.7 1.0 2.3 2.6 1.6 1.3 - pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Note 10 & 11) Diode Forward Voltage (Note 10) Reverse Recover Time (Note 11) Reverse Recover Charge (Note 11) DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 12) Total Gate Charge (Note 12) Gate-Source Charge (Note 12) Gate-Drain Charge (Note 12) Turn-On Delay Time (Note 12) Turn-On Rise Time (Note 12) Turn-Off Delay Time (Note 12) Turn-Off Fall Time (Note 12) Notes: Ω Test Condition IS = 4A, di/dt = 100A/µs VDS = 15V, VGS = 0V, f = 1.0MHz VGS = 2.5V VGS = 4.5V VDS = 10V ID = 4A VDS = 10V, ID = 4A VGS = 5V, RG = 6Ω 10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%. 11. For design aid only, not subject to production testing. 12. Switching characteristics are independent of operating junction temperature. ZXMN2AMC Document number: DS35089 Rev. 1 - 2 4 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN2AMC 10V T = 25°C 10 4.5V 2.5V 2V 1 VGS 1.5V 0.1 0.1 1 3V 2.5V 2V 1 1.5V VGS 0.1 1V 10 0.1 10 Output Characteristics 1.6 VDS = 10V T = 150°C T = 25°C 0.1 1.0 1.5 2.0 2.5 3.0 3.5 Normalised RDS(on) and VGS(th) 10 ID Drain Current (A) 1 VDS Drain-Source Voltage (V) Output Characteristics VGS = 4.5V 1.0 VGS 2.5V 3V 1 4.5V 0.1 10V T = 25°C 0.1 1 ID Drain Current (A) 10 On-Resistance v Drain Current ZXMN2AMC Document number: DS35089 Rev. 1 - 2 VGS(th) 0.8 VGS = VDS 0.6 ID = 250uA 0.4 -50 0 50 100 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) 2V RDS(on) 1.2 Tj Junction Temperature (°C) Typical Transfer Characteristics 1.5V ID = 4A 1.4 VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (W) 4.5V 10 VDS Drain-Source Voltage (V) 1 10V T = 150°C 3V ID Drain Current (A) ID Drain Current (A) Typical Electrical Characteristics 10 T = 150°C 1 T = 25°C 0.1 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN2AMC Typical Electrical Characteristics - Continued C Capacitance (pF) f = 1MHz 400 CISS COSS 200 CRSS 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 4.5 VGS = 0V ID = 4A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VDS = 10V 0 1 2 3 4 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN2AMC Document number: DS35089 Rev. 1 - 2 Switching time test circuit 6 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN2AMC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 Z b e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXMN2AMC Document number: DS35089 Rev. 1 - 2 Dimensions C G G1 X X1 Y Y1 Y2 7 of 8 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN2AMC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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