ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT223 package APPLICATIONS • DC - DC Converters • Audio Output Stages • Relay and Solenoid driving • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN4A06GTA 7” 12mm 1000 units ZXMN4A06GTC 13” 12mm 4000 units DEVICE MARKING • ZXMN 4A06 Top View ISSUE 1 - MAY 2002 1 ZXMN4A06G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS Gate-Source Voltage V GS Continuous Drain Current V GS =10V; T A =25°C(b) V GS =10V; T A =70°C(b) V GS =10V; T A =25°C(a) ID Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) LIMIT UNIT 40 V 20 V 7.0 5.6 5.0 A I DM 22 A IS 5.4 A Pulsed Source Current (Body Diode)(c) I SM 22 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 2.0 16 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 3.9 31 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 62.5 °C/W Junction to Ambient (b) R θJA 32.2 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10s - pulse width limited by maximum junction temperature. ISSUE 1 - MAY 2002 2 ZXMN4A06G Max Power Dissipation (W) ID Drain Current (A) CHARACTERISTICS RDS(on) 10 Limited 1 DC 1s 100m 100ms 10ms Single Pulse 1ms 10m Tamb= 25° C 1 100µs 10 V DS Drain-Source Voltage (V) 2.0 1.6 1.2 0.8 0.4 0.0 Maximum Power (W) Thermal Resistance (° C/W) 60 Tamb= 25° C 50 40 D= 0.5 30 20 Single Pulse D= 0.2 D= 0.05 10 D= 0.1 0 100µ 1m 10m 100m 1 10 Pulse Width (s) 100 1k 20 40 60 80 100 120 140 160 Temperature (° C) Derating Curve Safe Operating Area 70 0 Single Pulse Tamb= 25° C 100 10 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Transient Thermal Impedance ISSUE 1 - MAY 2002 3 Pulse Power Dissipation 1k ZXMN4A06G ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. 40 TYP. MAX. UNIT CONDITIONS. V I D =250A, V GS =0V 1 A V DS =40V, V GS =0V 100 nA V GS =±20V, V DS =0V STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 8.7 Input Capacitance C iss 770 pF Output Capacitance C oss 92 pF Reverse Transfer Capacitance C rss 61 pF Turn-On Delay Time t d(on) 2.55 ns Rise Time tr 4.45 ns Turn-Off Delay Time t d(off) 28.61 ns Fall Time tf 7.35 ns Total Gate Charge Qg 18.2 nC Gate-Source Charge Q gs 2.1 nC Gate-Drain Charge Q gd 4.5 nC Diode Forward Voltage (1) V SD 0.8 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr 1.0 0.050 0.075 V I =250A, V DS = V GS ⍀ ⍀ V GS =10V, I D =4.5A V GS =4.5V, I D =3.2A S V DS =15V,I D =2.5A D DYNAMIC (3) V DS =40 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =30V, I D =2.5A R G =6.0⍀, V GS =10V (refer to test circuit) V DS =30V,V GS =10V, I D =2.5A (refer to test circuit) SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =2.5A, V GS =0V 19.86 ns 16.36 nC T J =25°C, I F =2.5A, di/dt= 100A/µs NOTES (1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - MAY 2002 4 ZXMN4A06G 10V 4V T = 25° C 3.5V 10 ID Drain Current (A) ID Drain Current (A) TYPICAL CHARACTERISTICS 3V 2.5V V GS 1 2V T = 150° C 4V 10V 3.5V 3V 2.5V 10 2V 1 V GS 1.5V 0.1 0.1 0.1 1 10 0.1 V DS Drain-Source Voltage (V) 1 10 V DS Drain-Source Voltage (V) Output Characteristics Output Characteristics Normalised RDS(on) and VGS(th) ID Drain Current (A) 1.8 10 T = 150° C T = 25° C 1 V DS = 10V 1 2 3 V GS Gate-Source Voltage (V) 4 1.4 RDS(on) 1.2 1.0 V GS(th) 0.8 V GS = V DS ID = 250uA 0.6 0.4 -50 0 50 100 150 Tj Junction Temperature (° C) Typical Transfer Characteristics Normalised Curves v Temperature 1.5V 2V ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) V GS = 10V ID = 4.5A 1.6 T = 25° C 10 V GS 2.5V 3V 1 3.5V 4V 0.1 10V 1 T = 150° C 10 T = 25° C 1 0.1 0.2 10 0.4 0.6 0.8 1.0 1.2 1.4 V SD Source-Drain Voltage (V) ID Drain Current (A) On-Resistance v Drain Current Source-Drain Diode Forward Voltage ISSUE 1 - MAY 2002 5 ZXMN4A06G TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2002 6 ZXMN4A06G PACKAGE OUTLINE PAD LAYOUT DETAILS 4.6 2.0 min (3x) 2.3 1.5 min (3x) 6.8 2.0 min 3.8 min PACKAGE DIMENSIONS MILLIMETRES DIM MILLIMETRES DIM MIN MAX ᎏ 1.80 D A1 0.02 0.10 e 2.30 BASIC A2 1.55 1.65 e1 4.60 BASIC b 0.66 0.84 E 6.70 7.30 b2 2.90 3.10 E1 3.30 3.70 C 0.23 0.33 L 0.90 ᎏ A MIN MAX 6.30 6.70 © Zetex plc 2002 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MAY 2002 7