Part no. ZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 0.080 @ VGS= -10V -4.0 (V) -30 0.140 @ VGS= -4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features • Low on-resistance • Fast switching speed • 4.5V gate drive capability • Thermally enhanced SOT23 package Applications • Power management • Portable Equipment • Battery charging Ordering information Device ZXMP3F30FHTA Reel size (inches) Tape width (mm) Quantity per reel 7” 8mm 3,000 Pinout – top view Device marking KPA I Issue 1 - August 2008 © Diodes Incorporated 1 www.zetex.com www.diodes.com ZXMP3F30FH Absolute Maximum Ratings Absolute maximum ratings Parameter Symbol Limit Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGS ±20 V ID -3.4 V Continuous Drain current @ VGS= -10V; TA=25°C @ VGS= -10V; TA=70°C @ VGS= -10V; TA=25°C @ VGS= -10V; TL=25°C Pulsed Drain current (b) (b) -2.7 (a) -2.8 (d) -4.0 (c) Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C Linear derating factor (b) (c) (a) (b) (d) Operating and storage temperature range IDM -15.3 A IS -2 A ISM -15.3 A PD 0.95 7.6 W mW/°C PD 1.4 11.2 W mW/°C PD 1.96 15.7 W mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit RθJA 131 °C/W RθJA 89 °C/W RθJL 63.77 °C/W Thermal resistance Parameter Junction to ambient Junction to ambient Junction to lead (a) (b) (d) NOTES: (a) (b) (c) (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Mounted on FR4 PCB measured at t ≤ 10 sec. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - August 2008 © Diodes Incorporated 2 www.zetex.com www.diodes.com ZXMP3F30FH Thermal Characteristics 1.0 Max Power Dissipation (W) -ID Drain Current (A) 10 RDS(on) Limit 1 DC 1s 100ms 100m 10ms T amb=25°C 1ms 25mm x 25mm 10m 1oz FR4 100m 100µs 1 10 -VDS Drain-Source Voltage (V) 0.8 25mm x 25mm 1oz FR4 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve T amb=25°C 100 25mm x 25mm 1oz FR4 80 D=0.5 60 40 D=0.2 D=0.1 D=0.05 20 0 100µ Single Pulse 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 100 120 Transient Thermal Impedance Issue 1 - August 2008 © Diodes Incorporated Single Pulse T amb=25°C 25mm x 25mm 1oz FR4 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 3 www.zetex.com www.diodes.com ZXMP3F30FH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symb ol Min. Drain-Source breakdown voltage V(BR)DSS -30 Zero Gate voltage Drain current IDSS Gate-Body leakage IGSS Gate-Source threshold voltage VGS(th) Static Drain-Source ( ) on-state resistance * RDS(on) Forward ( ) (†) Transconductance * gfs Input capacitance Typ. Max. Unit Conditions Static V ID = -250μA, VGS=0V -1.0 µA VDS=-30V, VGS=0V 100 nA VGS=±20V, VDS=0V V ID= -250μA, VDS=VGS Ω VGS= -10V, ID= -2.5A VGS= -4.5V, ID= -1.9A 5 S VDS= -15V, ID= -3A Ciss 370 pF Output capacitance Coss 72 pF Reverse transfer capacitance Crss 38 pF Turn-on-delay time td(on) 1.3 ns Rise time tr 2.6 ns VDD= -15V, VGS= -10V ID= -1A RG ≅ 6.0Ω, Dynamic -1.0 0.080 0.140 (†) Switching VDS= -15V, VGS=0V f=1MHz (‡) (†) Turn-off delay time td(off) 49 ns Fall time tf 22 ns Total Gate charge Qg 7 nC Gate-Source charge Qgs 1.2 nC Gate-Drain charge Qgd 1.3 nC VSD -0.80 trr 14.6 ns Qrr 9.5 nC Gate charge VDS= -15V, VGS= -10V ID= -3A Source–Drain diode Diode forward voltage Reverse recovery time ( ) * (‡) Reverse recovery charge (‡) -1.2 V IS= -1.7A,VGS=0V IS= -1.5A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - August 2008 © Diodes Incorporated 4 www.zetex.com www.diodes.com ZXMP3F30FH Typical Characteristics 5V 7V 4V 3.5V 1 3V 0.1 VGS T = 25°C 4.5V 4V 3.5V 3V 1 2.5V 0.1 VGS 0.01 0.1 1 10 0.1 -VDS Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) VDS = 10V T = 150°C 1 T = 25°C 0.1 2 3 4 -VGS Gate-Source Voltage (V) Typical Transfer Characteristics 3V 10 T = 25°C VGS 4.5V 4V 5V 7V 0.1 10V 0.1 1 10 -ID Drain Current (A) On-Resistance v Drain Current Issue 1 - August 2008 © Diodes Incorporated VGS = 10V 1.6 ID = 3A 1.4 RDS(on) 1.2 1.0 0.8 VGS = VDS 0.6 0.4 -50 VGS(th) ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature 3.5V 1 10 Output Characteristics -ISD Reverse Drain Current (A) 10 1 -VDS Drain-Source Voltage (V) Output Characteristics -ID Drain Current (A) 7V 10 0.01 RDS(on) Drain-Source On-Resistance (Ω) 10V T = 150°C 4.5V -ID Drain Current (A) -ID Drain Current (A) 10V 10 10 1 T = 150°C T = 25°C 0.1 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 www.zetex.com www.diodes.com ZXMP3F30FH Typical Characteristics C Capacitance (pF) VGS = 0V 500 f = 1MHz 400 300 CISS COSS CRSS 200 100 0 1 10 -VGS Gate-Source Voltage (V) 600 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 9 8 7 6 5 4 3 2 1 0 ID = 3A VDS = 15V 0 1 2 3 4 Q - Charge (nC) 5 6 7 Gate-Source Voltage v Gate Charge Test Circuits Issue 1 - August 2008 © Diodes Incorporated 6 www.zetex.com www.diodes.com ZXMP3F30FH Packaging Details – SOT23 Issue 1 - August 2008 © Diodes Incorporated 7 www.zetex.com www.diodes.com ZXMP3F30FH Definitions Product change Diodes Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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