A Product Line of Diodes Incorporated ZXMP6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID Max V(BR)DSS RDS(on) Max TA = 25°C (Note 5) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V -2.4 A -60V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Low on-resistance Fast switching speed Low threshold Low gate drive Low input capacitance “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • DC-DC Converters Power management functions Disconnect switches Motor control • Case: SOT-26 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.018 grams (approximate) SOT-26 D D D D G S Pin Out - Top View Top View D G S Equivalent Circuit Ordering Information (Note 3) Product ZXMP6A17E6TA Notes: Marking 6A17 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 6A17 ZXMP6A17E6 Document Number: DS33589 Rev. 2 - 2 6A17 = Product Type Marking Code 1 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP6A17E6 ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS = 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 5) TA = 70°C (Note 5) (Note 4) (Note 6) (Note 5) (Note 6) ID IDM IS ISM Value -60 ±20 -3.0 -2.4 -2.3 -13.6 -2.5 -13.6 Unit V V Value 1.1 8.8 1.92 15.4 113 65 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Operating and storage temperature range Notes: Symbol (Note 4) PD (Note 5) (Note 4) (Note 5) RθJA TJ, TSTG W mW/°C °C/W °C 4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Same as note (4), except the device is measured at t ≤ 5 sec. 6. Same as note (4), except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. ZXMP6A17E6 Document Number: DS33589 Rev. 2 - 2 2 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Thermal Characteristics -ID Drain Current (A) 10 Limited 1 DC 1s 100m 10m 100ms 10ms 1ms 100us 10us Single Pulse, T amb=25°C 1 10 100 Max Power Dissipation (W) 1.2 RDS(ON) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 -VDS Drain-Source Voltage (V) Maximum Power (W) 80 D=0.5 60 Single Pulse D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 125 150 100 1k Single Pulse T amb=25°C 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number: DS33589 Rev. 2 - 2 100 100 Pulse Width (s) ZXMP6A17E6 75 Derating Curve 100 40 50 Temperature (°C) P-channel Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION ZXMP6A17E6 Pulse Power Dissipation 3 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP6A17E6 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ±100 V μA nA ID = -250μA, VGS = 0V VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) ⎯ gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID = -250μA, VDS = VGS VGS = -10V, ID = -2.3A VGS = -4.5V, ID = -1.9A VDS = -15V, ID = -2.3A IS = -2A, VGS = 0V ⎯ -3.0 0.125 0.190 ⎯ -0.95 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 7) ⎯ 0.100 0.130 4.7 -0.85 25.1 27.2 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 637 70 53 9.8 17.7 1.6 4.4 2.6 3.4 26.2 11.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Forward Transconductance (Notes 7 & 8) Diode Forward Voltage (Note 7) Reverse recovery time (Note 8) Reverse recovery charge (Note 8) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Notes: Ω Test Condition IF = -1.7A, di/dt = 100A/μs VDS = -30V, VGS = 0V f = 1MHz VGS = -5.0V VGS = -10V VDS = -30V ID = -2.3A VDD = -30V, VGS = -10V ID = -1A, RG ≅ 6.0Ω 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. ZXMP6A17E6 Document Number: DS33589 Rev. 2 - 2 4 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics 10V 4V 3.5V 3V 1 2.5V 4.5V 3.5V 3V 2.5V 10 2V 0.1 5V 10V T = 150°C 5V 10 -ID Drain Current (A) -ID Drain Current (A) T = 25°C -VGS 1 2V -VGS 0.1 1.5V 0.01 0.01 0.1 1 0.1 10 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics Normalised RDS(on) and VGS(th) 1.8 -ID Drain Current (A) 10 T = 150°C 1 T = 25°C 0.1 -VDS = 10V 1 2 3 VGS = -10V 1.6 ID = - 2.3A RDS(on) 1.4 1.2 1.0 ID = -250uA 0.6 4 -50 2.5V 3V 3.5V 4V 5V 0.1 10V T = 25°C 0.01 0.1 1 -ID Drain Current (A) 10 On-Resistance v Drain Current ZXMP6A17E6 Document Number: DS33589 Rev. 2 - 2 -ISD Reverse Drain Current (A) -VGS 1 50 100 150 Normalised Curves v Temperature 2V 10 0 Tj Junction Temperature (°C) Typical Transfer Characteristics 100 VGS(th) VGS = VDS 0.8 -VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION ZXMP6A17E6 10 T = 150°C 1 T = 25°C 0.1 VGS= 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP6A17E6 1000 10 -VGS Gate-Source Voltage (V) VGS = 0V C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics - continued f = 1MHz 800 CISS 600 COSS 400 CRSS 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) 8 6 4 ID = -2.3A 2 VDS = -30V 0 0 2 4 6 8 10 12 14 16 18 Q - Charge (nC) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr td(of ) t(on) tr t(on) Switching time waveforms ZXMP6A17E6 Document Number: DS33589 Rev. 2 - 2 Pulse width ⬍ 1S Duty factor 0.1% td(on) Switching time test circuit 6 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP6A17E6 Package Outline Dimensions A SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm B C H K M J L D Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X ZXMP6A17E6 Document Number: DS33589 Rev. 2 - 2 7 of 8 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP6A17E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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