ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information Device Reel size Tape width Quantity per reel ZXTC2045E6TA 7” 8mm embossed 3,000 ZXTC2045E6TC 13” 8mm embossed 10,000 Device marking Pin out - top view 2045 Issue 1 - January 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTC2045E6 Absolute maximum ratings (each transistor) Parameter Symbol Limit Unit NPN PNP Collector-base voltage BVCBO 40 -40 V Collector-emitter voltage BVCEV 40 -40 V Collector-emitter voltage BVCEO 30 -30 V Emitter-base voltage BVEBO 7 -7 V ICM 5 -5 A Continuous collector current (a) IC 1.5 -1.5 A Base current IB 1 -1 A Power dissipation at TA =25°C (a) (c) Linear derating factor PD 0.9 7.2 W mW/°C Power dissipation at TA =25°C (a) (d) Linear derating factor PD 1.1 8.8 W mW/°C Power dissipation at TA =25°C (b) (c) Linear derating factor PD 1.7 13.6 W mW/°C Tj, Tstg -55 to +150 °C Symbol Value Unit Junction to ambient (a) (c) RθJA 139 °C/W Junction to ambient (b) (c) RθJA 73 °C/W Junction to ambient (a) (d) RθJC 113 °C/W Peak pulse current Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t < 5 seconds. (c) For device with one active die. (d) For device with two active dice running at equal power. Issue 1 - January 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTC2045E6 Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown BVCBO voltage (-)40(*) V IC = (-)100A Collector-emitter breakdown voltage BVCEV (-)40(*) V IC = (-)1A 0.25V>VBE>1.0V ( 0.25V<VBE<1.0V ) Collector-emitter breakdown voltage BVCEO (-)30(*) V IC = (-)10mA (†) Emitter-base breakdown voltage BVEBO (-)7(*) (-)8.5(*) V IE = (-)100A Collector cut-off current ICBO (-)<1(*) (-)20(*) nA VCB = (-)32V Collector cut-off current ICES/R (-)<1(*) (-)20(*) nA VCE = (-)16V, Rⱕ 1kΩ Emitter cut-off current IEBO (-)<1(*) (-)20(*) nA VEB = (-)6V Collector-emitter saturation voltage VCE(SAT) (-)375(*) mV IC = (-)0.75A, IB =(-)15mA (†) Base-emitter saturation voltage VBE(SAT) (-)1.2(*) V IC =(-) 0.75A, IB =(-)15mA(†) Static forward current transfer ratio hFE 180 300 500 IC = (-)100mA, VCE =(-)2V(†) NOTES: (*) ( ) applies to PNP (†) Measured under pulsed conditions. Pulse width ⱕ 300 s; duty cycle ⱕ 2%. Issue 1 - January 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTC2045E6 Package details - SOT23-6 DIM Millimeters Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20 1.30 0.10 A A1 A2 b C D E E1 L e e1 L Inches Max. 1.45 0.15 1.30 0.50 0.26 3.10 3.20 1.80 0.60 Min. 0.354 0.00 0.0354 0.0078 0.0035 0.1062 0.0866 0.0511 0.0039 0.95 REF 1.90 REF 0° Max. 0.0570 0.0059 0.0511 0.0196 0.0102 0.1220 0.1181 0.0708 0.0236 0.0374 REF 0.0748 REF 30° 0° 30° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices, agents and distributors please go to www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - January 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com