ZETEX ZXTD4591AM832TC

ZXTD4591AM832
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR
SUMMARY
NPN Transistor
PNP Transistor
VCEO = 40V; RSAT = 195m ; C = 2.5A
VCEO = -40V; RSAT = 350m ; C = -2A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package),
these high performance NPN / PNP combination dual transistors offer lower on
state losses making them ideal for use in DC-DC circuits and various driving
and power-management functions.
Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
3mm x 2mm Dual Die MLP
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
C1
C2
Reduced component count
FEATURES
B1
B2
• Low Saturation Voltage (500mV max @1A)
• HFE specified up to 2A
• IC = 2.5A Continuous Collector Current
E2
E1
• 3mm x 2mm MLP
APPLICATIONS
• DC - DC Converters
• Power switches
PINOUT
• Motor control
• LED Backlighting circuits
ORDERING INFORMATION
DEVICE
REE
L
TAPE
WIDTH
QUANTITY
PER REEL
ZXTD4591AM832TA
7 ⴕⴕ
8mm
3000
ZXTD4591AM832TC
13ⴕ ⴕ
8mm
10000
3mm x 2mm Dual MLP
underside view
DEVICE MARKING
91A
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ZXTD4591AM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPN
PNP
UNIT
V
Collector-Base Voltage
V CBO
40
-40
Collector-Emitter Voltage
V CEO
40
-40
V
Emitter-Base Voltage
V EBO
5
-5
V
Peak Pulse Current
I CM
3
-3
A
Continuous Collector Current (a)(f)
IC
2
-1.5
A
Continuous Collector Current (b)(f)
IC
2.5
Base Current
IB
300
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD
3
24
W
mW/°C
Storage Temperature Range
T stg
Junction Temperature
Tj
-2.0
A
-55 to +150
°C
150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R θJA
83.3
°C/W
Junction to Ambient (b)(f)
R θJA
51
°C/W
Junction to Ambient (c)(f)
R θJA
125
°C/W
Junction to Ambient (d)(f)
R θJA
111
°C/W
Junction to Ambient (d)(g)
R θJA
73.5
°C/W
Junction to Ambient (e)(g)
R θJA
41.7
°C/W
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
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ZXTD4591AM832
TYPICAL CHARACTERISTICS
AWAITING GRAPH
AWAITING GRAPH
NPN Safe Operating Area
PNP Safe Operating Area
Max Power Dissipation (W)
Thermal Resistance (°C/W)
3.5
Note (a)(f)
80
60
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
0
100µ 1m
D=0.1
10m 100m
1
10
100
1k
1oz Cu
Note (d)(g)
1.5
1.0
0.5
0.0
0
1oz Cu
Note (d)(f)
25
50
75
100
125
Transient Thermal Impedance
Derating Curve
2oz copper
Note (g)
Thermal Resistance (°C/W)
PD Dissipation (W)
2oz Cu
Note (a)(f)
2.0
Temperature (°C)
Tamb=25°C
Tj max=150°C
Continuous
2.5
2.5
Pulse Width (s)
3.5
3.0
Tamb=25°C
2oz Cu
Note (e)(g)
3.0
2oz copper
Note (f)
2.0
1.5
1.0
1oz copper
Note (f)
0.5
0.0
0.1
1
1oz copper
Note (g)
10
100
Board Cu Area (sqcm)
225
200
175
150
125
100
75
50
25
0
0.1
150
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (g)
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
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ZXTD4591AM832
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V (BR)CBO
40
TYP.
MAX.
UNIT
V
I C =100␮A
Collector-Emitter Breakdown
Voltage
V (BR)CEO
40
V
I C =10mA*
Emitter-Base Breakdown Voltage
V (BR)EBO
5
V
I E =100␮A
Collector Cut-Off Current
I CBO
100
nA
V CB =30V
Emitter Cut-Off Current
I EBO
100
nA
V EB =4V
Collector Emitter Cut-Off Current
I CES
100
nA
V CE =30V
Collector-Emitter Saturation
Voltage
V CE(sat)
300
500
mV
mV
I C =0.5A, I B =50mA*
I C =1A, I B =100mA*
Base-Emitter Saturation Voltage
V BE(sat)
1.1
V
I C =1A, I B =100mA*
Base-Emitter Turn-On Voltage
V BE(on)
1.0
V
Static Forward Current Transfer
Ratio
h FE
300
300
200
35
Transition Frequency
fT
150
Output Capacitance
C obo
I C =1A, V CE =5V*
I C =1mA, V CE =5V*
I C =0.5A, V CE =5V*
I C =1A, V CE =5V*
I C =2A, V CE =5V*
900
MHz
10
CONDITIONS.
pF
I C =-50mA, V CE =-10V
f=100MHz
V CB =-10V, f=1MHz
*Measured under pulsed conditions.
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ZXTD4591AM832
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ZXTD4591AM832
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V (BR)CBO
-40
TYP.
MAX.
UNIT
V
I C =-100␮A
Collector-Emitter Breakdown
Voltage
V (BR)CEO
-40
V
I C =-10mA*
Emitter-Base Breakdown Voltage
V (BR)EBO
-5
V
I E =-100␮A
Collector Cut-Off Current
I CBO
-100
nA
V CB =-30V
Emitter Cut-Off Current
I EBO
-100
nA
V EB =-4V
Collector Emitter Cut-Off Current
I CES
-100
nA
V CE =-30V
Collector-Emitter Saturation
Voltage
V CE(sat)
-200
-350
-500
mV
mV
mV
I C =-0.1A, I B =-1mA*
I C =-0.5A, I B =-20mA*
I C =-1A, I B =-100mA*
Base-Emitter Saturation Voltage
V BE(sat)
-1.1
V
Base-Emitter Turn-On Voltage
V BE(on)
-1.0
V
Static Forward Current Transfer
Ratio
h FE
300
300
250
160
30
Transition Frequency
fT
150
Output Capacitance
C obo
I C =-1A, I B =-50mA*
I C =-1A, V CE =-5V*
I C =-1mA, V CE =-5V*
I C =-0.1A, V CE =-5V*
I C =-0.5A, V CE =-5V*
I C =-1A, V CE =-5V*
I C =-2A, V CE =-5V*
800
MHz
10
CONDITIONS.
pF
I C =-50mA, V CE =-10V
f=100MHz
V CB =-10V, f=1MHz
*Measured under pulsed conditions.
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ZXTD4591AM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MILLIMETRES
DIM
MIN.
MAX.
MIN.
MAX.
A
0.80
1.00
0.031
0.039
A1
0.00
0.05
0.00
0.002
E
A2
0.65
0.75
0.0255
0.0295
E2
0.43
0.63
0.017
0.0249
A3
0.15
0.25
0.006
0.0098
E4
0.16
0.36
0.006
0.014
b
0.24
0.34
0.009
0.013
L
0.20
0.45
0.0078
0.0157
b1
0.17
0.30
0.0066
0.0118
L2
0.125
0.00
0.005
D
3.00 BSC
e
0.118 BSC
D2
0.82
1.02
0.032
0.040
D3
1.01
1.21
0.0397
0.0476
MIN.
r
⍜
MAX.
INCHES
0.65 REF
2.00 BSC
0.075 BSC
0⬚
12⬚
MIN.
MAX.
0.0256 BSC
0.0787 BSC
0.0029 BSC
0⬚
12⬚
© Zetex plc 2002
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ISSUE 1 - JUNE 2002
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